A multi-chip package is provided. The multi-chip package includes a plurality of chips including at least one bad chip and at least one good chip that are stacked and a plurality of through electrodes each penetrating the chips. A logic circuit included in the at least one bad chip is isolated from each of the plurality of through electrodes.

In various embodiments, a chip arrangement is provided. The chip arrangement may include a chip carrier and a chip mounted on the chip carrier. The chip may include at least two chip contacts and an insulating adhesive between the chip and the chip carrier to adhere the chip to the chip carrier. The at least two chip contacts may be electrically coupled to the chip carrier.

Described herein are methods and systems for providing corrective maintenance using global knowledge sharing. A method to provide corrective maintenance with a CM system includes performing a query to generate a ranking of fixable causes based on factors (e.g., symptoms, configuration, test). The ranking may be determined based on a fixable cause percent match with the factors. The ranking of fixable causes may be associated with one or more solutions for each fixable cause. The ranking can be updated based on performing tests or solutions.

A base at least one principal plane of which is a nitride is prepared for use in epitaxial growth. The base is placed on a susceptor in an epitaxial growth reactor and heated to a predetermined temperature (step A). The heating is started with inactive, nitrogen gas being supplied into the reactor. Then, active, NH3 gas is supplied. Then, a growth step (step B) of a first nitride semiconductor layer is started without an intervening step of thermally cleaning the principal nitride plane of the base. In step B, the first nitride semiconductor layer is epitaxially grown on a principal nitride plane of a base without supply of an Si source material. Then, a relatively thick, second nitride semiconductor layer is epitaxially grown on the first nitride semiconductor layer by supplying an n-type dopant source material (step C).

In manufacturing an LSI, or semiconductor integrated circuit device, the step of assembling device (such as resin sealing step) is normally followed by a voltage-application test in an environment of high temperature (e.g., from 85 to 130° C.) and high humidity (e.g., about 80% RH). It has been found that separation of a titanium nitride anti-reflection film from an upper film and generation of cracks in the titanium nitride film at an upper surface edge part of the aluminum-based bonding pad applied with a positive voltage in the test is caused by an electrochemical reaction due to moisture incoming through the sealing resin and the like to generate oxidation and bulging of the titanium nitride film. These problems are addressed by removing the titanium nitride film over the pad in a ring or slit shape at peripheral area of the aluminum-based bonding pad.

A semiconductor device has a semiconductor wafer with a plurality of contact pads. A first insulating layer is formed over the semiconductor wafer and contact pads. A portion of the first insulating layer is removed, exposing a first portion of the contact pads, while leaving a second portion of the contact pads covered. An under bump metallization layer and a plurality of bumps is formed over the contact pads and the first insulating layer. A second insulating layer is formed over the first insulating layer, a sidewall of the under bump metallization layer, sidewall of the bumps, and upper surface of the bumps. A portion of the second insulating layer covering the upper surface of the bumps is removed, but the second insulating layer is maintained over the sidewall of the bumps and the sidewall of the under bump metallization layer.

Embodiments of a method for fabricating stacked microelectronic packages are provided, as are embodiments of a stacked microelectronic package. In one embodiment, the method includes arranging microelectronic device panels in a panel stack. Each microelectronic device panel includes a plurality of microelectronic devices and a plurality of package edge conductors extending therefrom. Trenches are formed in the panel stack exposing the plurality of package edge conductors. An electrically-conductive material is deposited into the trenches and contacts the plurality of package edge conductors exposed therethrough. The panel stack is then separated into partially-completed stacked microelectronic packages. For at least one of the partially-completed stacked microelectronic packages, selected portions of the electrically-conductive material are removed to define a plurality of patterned sidewall conductors interconnecting the microelectronic devices included within the stacked microelectronic package.

It is an object to provide a semiconductor device including a thin film transistor with favorable electric properties and high reliability, and a method for manufacturing the semiconductor device with high productivity. In an inverted staggered (bottom gate) thin film transistor, an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer, and a buffer layer formed using a metal oxide layer is provided between the semiconductor layer and a source and drain electrode layers. The metal oxide layer is intentionally provided as the buffer layer between the semiconductor layer and the source and drain electrode layers, whereby ohmic contact is obtained.

Methods for fabricating integrated circuits include fabricating a logic device on a substrate, forming an intermediate semiconductor substrate on a surface of the logic device, and fabricating a capacitor-less memory cell on the intermediate semiconductor substrate. Integrated circuits with capacitor-less memory cells formed on a surface of a logic device are also disclosed, as are multi-core microprocessors including such integrated circuits.

Embodiments generally relate to optoelectronic devices and more specifically, to textured layers in optoelectronic devices. In one embodiment, a method for providing a textured layer in an optoelectronic device includes depositing a first layer of a first material and depositing an island layer of a second material on the first layer. Depositing the island layer includes forming one or more islands of the second material to provide at least one textured surface of the island layer, where the textured surface is operative to cause scattering of light.

Disclosed is a semiconductor device including an oxide semiconductor film. A first oxide semiconductor film with a thickness of greater than or equal to 2 nm and less than or equal to 15 nm is formed over a gate insulating layer. First heat treatment is performed so that crystal growth from a surface of the first oxide semiconductor film to the inside thereof is caused, whereby a first crystal layer is formed. A second oxide semiconductor film with a thickness greater than that of the first oxide semiconductor film is formed over the first crystal layer. Second heat treatment is performed so that crystal growth from the first crystal layer to a surface of the second oxide semiconductor film is caused, whereby a second crystal layer is formed. Further, oxygen doping treatment is performed on the second crystal layer.

An object is to provide a thin film transistor and a method for manufacturing the thin film transistor including an oxide semiconductor with a controlled threshold voltage, high operation speed, a relatively easy manufacturing process, and sufficient reliability. An impurity having influence on carrier concentration in the oxide semiconductor layer, such as a hydrogen atom or a compound containing a hydrogen atom such as H2O, may be eliminated. An oxide insulating layer containing a large number of defects such as dangling bonds may be formed in contact with the oxide semiconductor layer, such that the impurity diffuses into the oxide insulating layer and the impurity concentration in the oxide semiconductor layer is reduced. The oxide semiconductor layer or the oxide insulating layer in contact with the oxide semiconductor layer may be formed in a deposition chamber which is evacuated with use of a cryopump whereby the impurity concentration is reduced.

A semiconductor device has a protective layer formed over an active surface of a semiconductor wafer. The semiconductor die with pre-applied protective layer are moved from the semiconductor wafer and mounted on a carrier. The semiconductor die and contact pads on the carrier are encapsulated. The carrier is removed. A first insulating layer is formed over the pre-applied protective layer and contact pads. Vias are formed in the first insulating layer and pre-applied protective layer to expose interconnect sites on the semiconductor die. An interconnect structure is formed over the first insulating layer in electrical contact with the interconnect sites on the semiconductor die and contact pads. The interconnect structure has a redistribution layer formed on the first insulating layer, a second insulating layer formed on the redistribution layer, and an under bump metallization layer formed over the second dielectric in electrical contact with the redistribution layer.

A semiconductor device having favorable electric characteristics and a manufacturing method thereof are provided. A transistor includes an oxide semiconductor layer formed over an insulating layer, a source electrode layer and a drain electrode layer which overlap with part of the oxide semiconductor layer, a gate insulating layer in contact with part of the oxide semiconductor layer, and a gate electrode layer over the gate insulating layer. In the transistor, a buffer layer having n-type conductivity is formed between the source electrode layer and the oxide semiconductor layer and between the drain electrode layer and the oxide semiconductor layer. Thus, parasitic resistance is reduced, resulting in improvement of on-state characteristics of the transistor.

A highly reliable semiconductor device is manufactured by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used for a channel. An oxide semiconductor film which can have a first crystal structure by heat treatment and an oxide semiconductor film which can have a second crystal structure by heat treatment are formed so as to be stacked, and then heat treatment is performed; accordingly, crystal growth occurs with the use of an oxide semiconductor film having the second crystal structure as a seed, so that an oxide semiconductor film having the first crystal structure is formed. An oxide semiconductor film formed in this manner is used for an active layer of the transistor.

A method for forming an amorphous semiconductor which contains an impurity element and has low resistivity and a method for manufacturing a semiconductor device with excellent electrical characteristics with high yield are provided. In the method for forming an amorphous semiconductor containing an impurity element, which utilizes a plasma CVD method, pulse-modulated discharge inception voltage is applied to electrodes under the pressure and electrode distance with which the minimum discharge inception voltage according to Paschen's Law can be obtained, whereby the amorphous semiconductor which contains an impurity element and has low resistivity is formed.

A protective film to a polarizer including a cellulose acylate and satisfying the following requirement (1) or (2): (1): The surface of the film has a pH of from 3.0 to 4.5.(2): The surface of the film has a pH of more than 4.5 and at most 6.0, and the film has a moisture permeability of at least 2800 g/m2·day.

The present invention provides an electroconductive sheet and a touch panel which do not impair visibility in a vicinity of an electrode terminal in a sensing region. In an electroconductive sheet which has an electrode pattern constructed of a metal thin wire and an electrode terminal that is electrically connected to an end of the electrode pattern, a transmittance of the electrode pattern is 83% or more, and when the transmittance of the electrode pattern is represented by a %, a transmittance of the electrode terminal is controlled to be (a-20)% or more and (a-3)% or less.

A vehicular imaging and display system includes a rear backup camera at a rear portion of a vehicle, a video processor for processing image data captured by the rear camera, and a video display screen responsive to the video processor to display video images. During a reversing maneuver of the equipped vehicle, the video display screen displays video images captured by the rear camera. During forward travel of the equipped vehicle, the video display screen is operable to display images representative of a portion of the field of view of the rear camera to display images representative of an area sideward of the equipped vehicle responsive to at least one of (a) actuation of a turn signal indicator of the vehicle, (b) detection of a vehicle in a side lane adjacent to the equipped vehicle and (c) a lane departure warning system of the vehicle.

A sensor substrate includes a blocking pattern disposed on a base substrate, a first electrode disposed on the base substrate and overlapping the blocking pattern, the first electrode including a plurality of first unit parts arranged in a first direction, each of the first unit parts including a plurality of lines connected to each other in a mesh-type arrangement, a color filter layer disposed on the base substrate, a plurality of contact holes defined in the color filter layer and exposing the first unit parts, and a bridge line between and connected to first unit parts adjacent to each other in the first direction, through the contact holes.

An opposed substrate (9') comprises: a substrate (1); a static electricity protective electrode (2), a bridging electrode (4) and a touch induction electrode (6) comprising a plurality of sub-units sequentially formed on the substrate (1), wherein the distribution of the static electricity protective electrode (2) on the substrate (1) corresponds to dummy regions between sub-units, and the static electricity protective electrode (2), the bridging electrode (4) and the touch induction electrode (6) are insulated from each other. The opposed substrate (9') has a good touching effect. A method for manufacturing the opposed substrate, and a liquid crystal display touch panel are also disclosed.

Provided is a switching liquid crystal panel and a display device that have novel structures that are capable of preventing luminous regions from appearing in the light transmitting parts, in the vicinities of boundaries thereof with the light shielding parts. The switching liquid crystal panel includes a pair of substrates (26a, 26b) having a twisted nematic type liquid crystal layer (24) interposed therebetween, and a plurality of light shield forming electrodes (30) that are formed on at least one of the pair of the substrates (26a, 26b) and that form light shielding parts (40) of a parallax barrier (16) in cooperation with a counter electrode (34) when a voltage is applied, the counter electrode (34) being is opposed to the light shield forming electrodes (30) with the liquid crystal layer (24) interposed therebetween. A rubbing direction for an alignment film (36a) provided on the substrate (26a) side on which the light shield forming electrodes (30) are formed is at an angle of 45° or less to a lengthwise direction of the light shield forming electrodes (30).

A liquid crystal display element disclosed includes: a first substrate; a second substrate; a liquid crystal layer sandwiched between the first substrate and the second substrate; a first transparent electrode provided at a display region of the first substrate; and a second transparent electrode provided at a display region of the second substrate, at least one of d1 and d2 being not larger than 60 nm, where d1 represents a thickness of the first transparent electrode and d2 represents a thickness of the second transparent electrode.

In a semiconductor device, a first interlayer insulating layer made of an inorganic material and formed on inverse stagger type TFTs, a second interlayer insulating layer made of an organic material and formed on the first interlayer insulating layer, and a pixel electrode formed in contact with the second interlayer insulating layer are disposed on a substrate, and an input terminal portion that is electrically connected to a wiring of another substrate is provided on an end portion of the substrate. The input terminal portion includes a first layer made of the same material as that of the gate electrode and a second layer made of the same material as that of the pixel electrode. With this structure, the number of photomasks used in the photolithography method can be reduced to 5.

Provided is a back plate component having reflective sheet reinforcing structure. The back plate component includes: a frame, a reflective sheet and a plurality of supporting film sheets. The frame includes a plurality of lateral beams and vertical beams, and at least one hollow part is included between the lateral beams and the vertical beams. The reflective sheet is attached to the frame, and includes a reflective surface and a back surface corresponding to the reflective surface. A portion of the back surface covers the whole hollow part. The plurality of supporting film sheets is attached to the back surface at a region corresponding to the hollow part, and includes a material the same as that of the reflective sheet. A liquid crystal display device is further disclosed herein.

A liquid crystal display (LCD) device and a backlight module. The backlight module includes a lightbar, a lightbar heat sink, and a light guide panel (LGP). A light coupling distance is set between the lightbar and the LGP. The backlight module further includes a control structure controlling the light coupling distance. The lightbar is configured with a through hole, the control structure penetrating through the through hole is arranged on the lightbar heat sink, and the lightbar heat sink provides a fixing force that controls a position the LGP.

A liquid crystal display device includes a first substrate, a first electrode on the first substrate, a second substrate opposed to the first substrate, and a second electrode on the second substrate. The second electrode corresponds to the first electrode. The liquid crystal display device also includes a liquid crystal structure between the first electrode and the second electrode. The liquid crystal structure includes a plurality of liquid crystal molecules and at least one movement control member. The movement control member in the liquid crystal structure restricts a movement of the liquid crystal molecules.

The present invention provides an optical compensated bending (OCB) mode liquid crystal display (LCD) panel and a method for manufacturing the same. The method comprises the following steps: forming alignment layers on substrate, respectively; forming a liquid crystal layer between the alignment layers to form a liquid crystal cell; applying an electrical signal across the liquid crystal cell; and irradiating light rays to or heating the liquid crystal cell, so as to form a first polymer alignment layer and a second polymer alignment layer, respectively. The present invention can reduce a phase transition time of liquid crystal molecules from a splay state to a bent state.

There is provided an optical laminate which comprises: a polarizing film wherein a thin polarizing layer is laminated on one main surface of a substrate; and an optical element (lens array). The thin polarizing layer has a thickness of 8 μm or less. The substrate has a thickness of 20 μm to 80 μm. The optical element is a pattern retardation plate including a plurality of regions having different slow axis directions.

A counter substrate for liquid crystal display includes a transparent substrate, a black matrix, and stripe transparent electrodes. The black matrix divides a plane surface of the transparent substrate into pixel or sub-pixel unit to form a light-shielded area and openings above the plane surface. The stripe transparent electrodes are formed into the pixel unit or the sub-pixel unit above the plane surface. The black matrix includes a frame pattern including two sides facing each other in parallel in the pixel or the sub-pixel unit, and a linear central pattern which is parallel to the two sides of the frame pattern and is formed at a midsection of the pixel or the sub-pixel unit. The transparent electrodes are each parallel to the two sides of the frame pattern and the central pattern and are located symmetrically to the central pattern.

A display device uses a multilayer film (104), which reflects (red) light having wavelengths between about 600 and 800 nm at a 60 degree angle of incidence (114), to protect a liquid crystal panel (102) from heat and sun damage. The film (104) transmits light of the visible band with a wavelength between about 420 and 650 nm at normal incidence (116). The outermost surface (106) of the film (104) may be a hard coat (124). A metal oxide layer (120) and a metal layer (130) may be included to reflect IR light greater in wavelength than about 850 nm.

Disclosed herein is a liquid crystal display device including a plurality of pixels each having a reflecting section and a transmitting section, the pixels each including a plurality of sub-pixels resulting from alignment division, the liquid crystal display device including: an element layer formed on a substrate; an insulating film formed on the substrate so as to cover the element layer; a pixel electrode formed on the insulating film so as to be connected to the element layer; a gap adjusting layer formed on the insulating film on the element layer including a region of connection between the element layer and the pixel electrode; and a dielectric formed on a connecting part for making an electric connection between the sub-pixels.

A liquid crystal display device includes a liquid crystal display element including a first alignment film and a second alignment film and a liquid crystal layer that is provided between the first alignment film and the second alignment film, wherein the first alignment film includes a compound in which a polymer compound that includes a cross-linked functional group or a polymerized functional group as a side chain is cross-linked or polymerized, the second alignment film includes the same compound as the compound that configures the first alignment film, and the formation and processing of the second alignment film is different from the formation and processing of the first alignment film and when a pretilt angle of the liquid crystal molecules which is conferred by the first alignment film is θ1 and a pretilt angle of the liquid crystal molecules which is conferred by the second alignment film is θ2, θ1>θ2.

The present invention provides a display device substrate, a display device substrate manufacturing method, a display device, a liquid crystal display device, a liquid crystal display device manufacturing method and an organic electroluminescent display device that allow suppressing faults derived from occurrence of gas and/or bubbles in a pixel region. The present invention is a display device substrate that comprises: a photosensitive resin film; and a pixel electrode, in this order, from a side of an insulating substrate. The display device substrate has a gas-barrier insulating film, at a layer higher than the photosensitive resin film, for preventing advance of a gas generated from the photosensitive resin film, or has a gas-barrier insulating film, between the photosensitive resin film and the pixel electrode, for preventing advance of gas generated from the photosensitive resin film.

The disclosed technology discloses an array substrate and a liquid crystal display panel. The array substrate comprises: a base substrate; a gate line and a data line formed on the base substrate, the gate line and the data line defining a plurality of pixel regions; and a first electrode layer and a second electrode layer formed in each pixel region; and an insulating layer provided between the first electrode layer and the second electrode layer. The first electrode layer, the insulating layer and the second electrode layer are laminated on the base substrate in this order. The first electrode layer is provided with a plurality of first apertures therein, and the first electrode layer comprises a plurality of first electrode portions located between the plurality of first apertures.

A pixel structure comprises a plurality of pixel regions, and each of the pixel regions includes first and second electrodes that are overlapped with each other, the first electrode is disposed above the second electrode, and each of the pixel regions is divided at least into a first to fourth domain display regions; strip-shaped first electrodes in the first to fourth domain display regions make first to fourth angles with a reference direction; the sum of the first angle and the second angle is 180 degrees, the sum of the third angle and the fourth angle is 180 degrees, and the first, the second, the third and the fourth angles are different from one another.

A display apparatus includes a lower substrate, an upper substrate, a spacer and an image display layer. The spacer includes a main spacer, a first sub-spacer and a second sub-spacer. The main spacer has a height greater than that of the first and second sub-spacers. The second sub-spacer has an area wider than that of the main spacer and the first sub-spacer.

Embodiments of the disclosed technology relate to a color filter substrate and a method of manufacturing the same. The color filter substrate comprises a base substrate having a black matrix pattern thereon, the black matrix pattern having a plurality of openings; and a plurality of color filter layers in different colors, disposed on the base substrate and located at the openings of the black matrix pattern, the color filter layers being glass layers in different colors.

A liquid crystal display panel, including: a pixel electrode formed on a first substrate; an alignment layer formed on the pixel electrode, wherein the alignment layer includes an alignment layer material and aligns first liquid crystal molecules in a direction substantially perpendicular to the pixel electrode; and a photo hardening layer formed on the alignment layer, wherein the photo hardening layer includes a photo hardening layer material and aligns second liquid crystal molecules to be tilted with respect to the pixel electrode, wherein the alignment layer material and the photo hardening layer material have different polarities from each other.

A liquid crystal display capable of realizing a high transmittance while maintaining favorable voltage response characteristics, and a method of manufacturing the same are provided. The liquid crystal display includes: a liquid crystal layer; a first substrate and a second substrate arranged to face each other with the liquid crystal layer in between; a plurality of pixel electrodes provided on a liquid crystal layer side of the first substrate; and an opposite electrode provided on the second substrate to face the plurality of pixel electrodes. One or both of a face on the liquid crystal layer side of the pixel electrode, and a face on the liquid crystal layer side of the opposite electrode includes a concavo-convex structure.

The present invention provides a backlight module and a liquid crystal display device using the backlight module. The backlight module includes: a backplane (2), a light guide plate (4) arranged in the backplane (2), a backlight source (6) arranged in the backplane (2), an optic film assembly (8) arranged above the light guide plate (4), and a reflection plate (9) arranged between the backplane (2) and the light guide plate (4). The backlight source (6) includes a PCB (62) and a plurality of LED lights (64) mounted on and electrically connected to the PCB (62). The backplane (2) includes a bottom plate (22) and a plurality of side plates (24) perpendicularly connected to the bottom plate (22). The bottom plate (22) of the backplane (2) includes a snap-engagement structure (220) formed thereon. The PCB (62) is snap-fit into and retained by the snap-engagement structure (220). The reflection plate (9) is directly positioned on and supported by the PCB (62).

The liquid crystal display device includes an island-shaped first semiconductor film 102 which is formed over a base insulating film 101 and in which a source 102d, a channel forming region 102a, and a drain 102b are formed; a first electrode 102c which is formed of a material same as the first semiconductor film 102 to be the source 102d or the drain 102b and formed over the base insulating film 101; a second electrode 108 which is formed over the first electrode 102c and includes a first opening pattern 112; and a liquid crystal 110 which is provided over the second electrode 108.

The liquid crystal display device includes an island-shaped first semiconductor film 102 which is formed over a base insulating film 101 and in which a source 102d, a channel forming region 102a, and a drain 102b are formed; a first electrode 102c which is formed of a material same as the first semiconductor film 102 to be the source 102d or the drain 102b and formed over the base insulating film 101; a second electrode 108 which is formed over the first electrode 102c and includes a first opening pattern 112; and a liquid crystal 110 which is provided over the second electrode 108.

An optical element includes at least two stacked birefringent layers having respective local optical axes that are rotated by respective twist angles over respective thicknesses of the at least two layers, and are aligned along respective interfaces between the at least two layers. The respective twist angles and/or the respective thicknesses are different. The at least two stacked birefringent layers may be liquid crystal polymer optical retarder layers. Related devices and fabrication methods are also discussed.

According to one embodiment, a first gene encodes a reporter protein. The first gene is disposed at the downstream of the gene promoter. A second gene is disposed at the downstream of the gene promoter and encodes a replication origin-binding protein. An internal ribosome entry site is disposed between the first gene and the second gene. The transcription termination signal sequence encodes a signal for terminating the transcription of the first gene and the second gene. A replication origin sequence is recognized by the replication origin-binding protein.

The present invention relates to an anti-human α9 integrin antibody. More particularly, the present invention relates to: a monoclonal antibody, a chimeric antibody, a humanized antibody and a human antibody that specifically recognize human α9 integrin; a hybridoma cell that produces the monoclonal antibody; a method for producing the monoclonal antibody; a method for producing the hybridoma cell; a therapeutic agent comprising the anti-human α9 integrin antibody; a diagnostic agent comprising the human α9 integrin antibody; and a method for screening for a compound that inhibits the activity of human α9 integrin.

A method of expanding and maintaining human embryonic stem cells (ESCs) in an undifferentiated state by culturing the ESCs in a suspension culture under culturing conditions devoid of substrate adherence is provided. Also provided are a method of deriving ESC lines in the suspension culture and methods of generating lineage-specific cells from ESCs which were expanded in the suspension culture of the present invention.

Methods and devices for separating fluid-suspended plant somatic embryos and embryogenic tissue based on differences in their fluid drag properties are disclosed. Deposition method and device for depositing plant somatic embryos into embryo receiver comprising growth substrate by means of a fluid jet is disclosed. An automated system for processing plant somatic embryos from the bioreactor to the growth substrate is also disclosed.

A multi-channel system and methods for sorting particles according to one or more characteristics of the particles. The system includes multiple flow cytometry units, each unit can have a nozzle for producing a fluid stream containing a desired population of particles in a mixture of particles. Each of the units may be operable to sort said desired population of particles by interrogating the fluid stream with a beam of electromagnetic radiation and classifying particles based on one or more characteristics of the particles. The system also includes a common fluid delivery system for delivering sheath fluid to each flow cytometer unit for producing respective fluid streams.

Management of the health status of an animal colony using a plurality of blood collection cards and the analysis of dried blood from members of the colony that has been collected on the cards. Members of the colony may be removed from the colony as a result of the analysis.