A locking retractor is disclosed, as are stretchers and cots using the retractor to secure a patient. The retractor includes structure for locking the retractor spool to prevent rotation in both directions. However, a cam is coupled to the shaft and is arranged relative to the locking structure to prevent the spool from locking during an initial portion of the spool's rotation, until a first locking point is reached. Once the first locking point has been reached, a clutch prevents the locking structure from engaging while the spool is still rotating, but the locking structure will engage to lock the spool in both directions once active rotation stops. A user-actuatable lever is provided externally that disengages the locking structure when actuated to allow the spool to extend and retract freely.

In a webbing retractor, the center of a rack and rack-teeth in an axial direction of a pinion is placed on the opposite side of a leg plate side with respect to the central axis of a cylinder. The piston is acted upon by a tilting-force toward the leg plate side from the pinion. A stop portion of an upper stay is placed on another leg plate side of the leg plate. Even when the piston is acted upon by the tilting force toward the leg plate side from the pinion, the stop portion can stop the movement of the leg plate toward the other leg plate side, and tilting of the piston and the cylinder toward the leg plate side can be suppressed. Moreover, the need to increase the strength of a frame and so forth can be eliminated, so the webbing retractor can be made compact and lightweight.

An electrical system having an underlying structure resembling the double helix most commonly associated with DNA may be used to produce useful electromagnetic fields for various application.

A method and apparatus for automating some of the tasks that heretofore required operator action at headland turns or similar events are provided. The present invention automates operation of lift assist wheels and/or gull wings, such as those found on a stack-fold implement, based on the position of the tractor hitch to which the implement is coupled. An operator may control the position of the implement, such as at a headland turn, by raising and lowering the tractor hitch using a remote control. The invention enables the planter to compare the tractor hitch position relative to an implement position and control operation of the implement accordingly without additional user inputs.

A paired row opener has a furrowing tip arranged to be selectively supported on a body of the opener. The furrowing tip includes a knife portion and a pair of wing portions extending rearwardly and outwardly therefrom where are separable together from the opener body. A pair of deflector wings are integrally formed on the opener body above inner edges of the respective wing portions which are abutted with the opener body so as to deflect disturbed soil away from a seam between the inner edge of the wing portions and the opener body. An insulated mounting block is fastened onto a rear bracket of the opener body which receives an anhydrous ammonia delivery tube therethrough so permit optional delivery of anhydrous ammonia at a location which is insulated and spaced rearwardly from the opener body.

Biosensor apparatus and associated method for detecting a target material using a vibrating resonator having a surface that operably interacts with the target material. A detector is in electrical communication with a sensor, the sensor comprising a first paddle assembly connected to a second paddle assembly, the first paddle assembly having at least one microbalance sensing resonator proximate a proximal end and at least one sensing electrical contact proximate a distal end in electrical communication with the sensing resonator. The at least one sensing resonator has a target coating for operably interacting with the target material, and the second paddle assembly has a microbalance reference resonator proximate the proximal end and at least one reference electrical contact proximate the distal end in electrical communication with the reference resonator.

A test strip ejector system for receiving and ejecting a fluid testing medical device test strip includes a mechanism assembly supported by the device whereby user actuation of the mechanism assembly induces displacement of the test strip in at least a test strip ejection direction to eject the test strip. The mechanism assembly includes a power source and an electric motor such as a piezo-electric linear micro motor connected to the power source. The electric motor has an armature displaced when the electric motor is energized. A digital display/user interface is provided. Selection of an ejection function presented on the digital display/user interface initiates operation of the electric motor and displacement of the armature thereby displacing the test strip in the ejection direction. An operating system including a microprocessor is connected to the display/user interface. The microprocessor controls direction of operation and operating speed of the motor.

A hitch on a vehicle is raised and lowered by a hydraulic actuator controlled by an electrically operated valve. A control system receives a command that indicates a designated velocity and uses the command to operate the valve. Based on a reference external force exerted on the hitch, the control system is configured with relationships for converting a plurality of command values to corresponding electric current levels for operating the valve. The control system compensates for effects due to differences between the actual force acting on the hitch and the reference external force. Velocity feedback adjusts the electric current level applied to the valve. The passive load force control provides a predictor of the hitch load force to eliminate overshoot/undershoot of hitch motion. During hitch motion, the velocity feedback also compensates for effects due to load and hitch geometry changes that occur.

An object is to provide a semiconductor device using an oxide semiconductor having stable electric characteristics and high reliability. A transistor including the oxide semiconductor film in which a top surface portion of the oxide semiconductor film is provided with a metal oxide film containing a constituent similar to that of the oxide semiconductor film and functioning as a channel protective film is provided. In addition, the oxide semiconductor film used for an active layer of the transistor is an oxide semiconductor film highly purified to be electrically i-type (intrinsic) by heat treatment in which impurities such as hydrogen, moisture, a hydroxyl group, or a hydride are removed from the oxide semiconductor and oxygen which is a major constituent of the oxide semiconductor and is reduced concurrently with a step of removing impurities is supplied.

A semiconductor light-emitting device includes a lamination of semiconductor layers including a first layer of a first conductivity type, an active layer, and a second layer of a second conductivity type; a transparent conductive film formed on a principal surface of the lamination and having an opening; a pad electrode formed on part the opening; and a wiring electrode connected with the pad electrode, formed on another part of the opening while partially overlapping the transparent conductive film; wherein contact resistance between the transparent conductive film and the lamination is larger than contact resistance between the wiring electrode and the lamination. Field concentration at the wiring electrode upon application of high voltage is mitigated by the overlapping transparent conductive film.

The present invention relates to a film for flip chip type semiconductor back surface to be formed on a back surface of a semiconductor element flip chip-connected to an adherend, the film for flip chip type semiconductor back surface containing an inorganic filler in an amount within a range of 70% by weight to 95% by weight based on the whole of the film for flip chip type semiconductor back surface.

An object is to manufacture a semiconductor device with high reliability by providing the semiconductor device including an oxide semiconductor with stable electric characteristics. In a transistor including an oxide semiconductor layer, a gallium oxide film is used for a gate insulating layer and made in contact with an oxide semiconductor layer. Further, gallium oxide films are provided so as to sandwich the oxide semiconductor layer, whereby reliability is increased. Furthermore, the gate insulating layer may have a stacked structure of a gallium oxide film and a hafnium oxide film.

The band tail state and defects in the band gap are reduced as much as possible, whereby optical absorption of energy which is in the vicinity of the band gap or less than or equal to the band gap is reduced. In that case, not by merely optimizing conditions of manufacturing an oxide semiconductor film, but by making an oxide semiconductor to be a substantially intrinsic semiconductor or extremely close to an intrinsic semiconductor, defects on which irradiation light acts are reduced and the effect of light irradiation is reduced essentially. That is, even in the case where light with a wavelength of 350 nm is delivered at 1×1013 photons/cm2·sec, a channel region of a transistor is formed using an oxide semiconductor, in which the absolute value of the amount of the variation in the threshold voltage is less than or equal to 0.65 V.

According to one embodiment, a semiconductor light emitting device includes a stacked structure body, a first electrode, a second electrode, and a dielectric body part. The stacked structure body includes a first semiconductor layer, having a first portion and a second portion juxtaposed with the first portion, a light emitting layer provided on the second portion, a second semiconductor layer provided on the light emitting layer. The first electrode includes a contact part provided on the first portion and contacting the first layer. The second electrode includes a first part provided on the second semiconductor layer and contacting the second layer, and a second part electrically connected with the first part and including a portion overlapping with the contact part when viewed from the first layer toward the second layer. The dielectric body part is provided between the contact part and the second part.

A semiconductor device includes wiring layers formed over a semiconductor wafer, a via-layer between the wiring layers, conductive films in the wiring layers, and a via-plug in the via-layer connecting the conductive films of the wiring layers above and below, a scribe region at an outer periphery of a chip region along an edge of the semiconductor substrate and including a pad region in the vicinity of the edge, the pad region overlapping the conductive films of the plurality of wiring layers in the plan view, the plurality of wiring layers including first second wiring layers, the conductive film of the first wiring layer includes a first conductive pattern formed over an entire surface of said pad region in a plan view, and the conductive film of the second wiring layer includes a second conductive pattern formed in a part of the pad region in a plan view.

It is an object to provide a transistor having a new multigate structure in which operating characteristics and reliability are improved. In a transistor having a multigate structure, which includes two gate electrodes electrically connected to each other and a semiconductor layer including two channel regions connected in series formed between a source region and a drain region, and a high concentration impurity region is formed between the two channel regions; the channel length of the channel region adjacent to the source region is longer than the channel length of the channel region adjacent to the drain region.

A method and a semiconductor device for incorporating defect mitigation structures are provided. The semiconductor device comprises a substrate, a defect mitigation structure comprising a combination of layers of doped or undoped group IV alloys and metal or non-metal nitrides disposed over the substrate, and a device active layer disposed over the defect mitigation structure. The defect mitigation structure is fabricated by depositing one or more defect mitigation layers comprising a substrate nucleation layer disposed over the substrate, a substrate intermediate layer disposed over the substrate nucleation layer, a substrate top layer disposed over the substrate intermediate layer, a device nucleation layer disposed over the substrate top layer, a device intermediate layer disposed over the device nucleation layer, and a device top layer disposed over the device intermediate layer. The substrate intermediate layer and the device intermediate layer comprise a distribution in their compositions along a thickness coordinate.

A non-linear element (e.g., a diode) with small reverse saturation current is provided. A non-linear element includes a first electrode provided over a substrate, an oxide semiconductor film provided on and in contact with the first electrode, a second electrode provided on and in contact with the oxide semiconductor film, a gate insulating film covering the first electrode, the oxide semiconductor film, and the second electrode, and a third electrode provided in contact with the gate insulating film and adjacent to a side surface of the oxide semiconductor film with the gate insulating film interposed therebetween or a third electrode provided in contact with the gate insulating film and surrounding the second electrode. The third electrode is connected to the first electrode or the second electrode.

According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a light emitting unit, a second semiconductor layer, a reflecting electrode, an oxide layer and a nitrogen-containing layer. The first semiconductor layer is of a first conductivity type. The light emitting unit is provided on the first semiconductor layer. The second semiconductor layer is provided on the light emitting unit and is of a second conductivity type. The reflecting electrode is provided on the second semiconductor layer and includes Ag. The oxide layer is provided on the reflecting electrode. The oxide layer is insulative and has a first opening. The nitrogen-containing layer is provided on the oxide layer. The nitrogen-containing layer is insulative and has a second opening communicating with the first opening.

An electronic device includes a silicon carbide layer including an n-type drift region therein, a contact forming a junction, such as a Schottky junction, with the drift region, and a p-type junction barrier region on the silicon carbide layer. The p-type junction barrier region includes a p-type polysilicon region forming a P-N heterojunction with the drift region, and the p-type junction barrier region is electrically connected to the contact. Related methods are also disclosed.

An object is to provide a semiconductor device including an oxide semiconductor film, which has stable electrical characteristics and high reliability. A stack of first and second material films is formed by forming the first material film (a film having a hexagonal crystal structure) having a thickness of 1 nm to 10 nm over an insulating surface and forming the second material film having a hexagonal crystal structure (a crystalline oxide semiconductor film) using the first material film as a nucleus. As the first material film, a material film having a wurtzite crystal structure (e.g., gallium nitride or aluminum nitride) or a material film having a corundum crystal structure (α-Al2O3, α-Ga2O3, In2O3, Ti2O3, V2O3, Cr2O3, or α-Fe2O3) is used.

A semiconductor device, includes a semiconductor substrate, a first interconnect layer formed over the semiconductor substrate, a gate electrode formed in the first interconnect layer, a gate insulating film formed over the gate electrode, a second interconnect layer formed over the gate insulating film, an oxide semiconductor layer formed in the second interconnect layer, and a via formed in the second interconnect layer and connected to the oxide semiconductor layer. The gate electrode, the gate insulating film and the oxide semiconductor layer overlap in a plan view.

Semiconductor devices including a stressor in a recess and methods of forming the semiconductor devices are provided. The methods may include forming a trench in an active region and the trench may include a notched portion of the active region. The methods may also include forming an embedded stressor in the trench. The embedded stressor may include a lower semiconductor layer and an upper semiconductor layer, which has a width narrower than a width of the lower semiconductor layer. A side of the upper semiconductor layer may not be aligned with a side of the lower semiconductor layer and an uppermost surface of the upper semiconductor layer may be higher than an uppermost surface of the active region.

It is an object to manufacture a highly reliable semiconductor device including a thin film transistor whose electric characteristics are stable. An insulating layer which covers an oxide semiconductor layer of the thin film transistor contains a boron element or an aluminum element. The insulating layer containing a boron element or an aluminum element is formed by a sputtering method using a silicon target or a silicon oxide target containing a boron element or an aluminum element. Alternatively, an insulating layer containing an antimony (Sb) element or a phosphorus (P) element instead of a boron element covers the oxide semiconductor layer of the thin film transistor.

A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided. Further, a method for manufacturing a semiconductor device in which plural kinds of thin film transistors of different structures are formed over one substrate to form plural kinds of circuits and in which the number of steps is not greatly increased is provided. After a metal thin film is formed over an insulating surface, an oxide semiconductor layer is formed thereover. Then, oxidation treatment such as heat treatment is performed to oxidize the metal thin film partly or entirely. Further, structures of thin film transistors are different between a circuit in which emphasis is placed on the speed of operation, such as a logic circuit, and a matrix circuit.

A semiconductor film having an impurity region to which at least an n-type or p-type impurity is added and a wiring are provided. The wiring includes a diffusion prevention film containing a conductive metal oxide, and a low resistance conductive film over the diffusion prevention film. In a contact portion between the wiring and the semiconductor film, the diffusion prevention film and the impurity region are in contact with each other. The diffusion prevention film is framed in such a manner that a conductive film is exposed to plasma generated from a mixed gas of an oxidizing gas and a halogen-based gas to form an oxide of a metal material contained in the conductive film, the conductive film in which the oxide of the metal material is formed is exposed to an atmosphere containing water to be fluidized, and the fluidized conductive film is solidified.

When a semiconductor substrate of a semiconductor device is viewed from above, an isolation region, an IGBT region, and a diode region are all formed adjacent to each other. A deep region that is connected to a body region and an anode region is formed in the isolation region. A drift region is formed extending across the isolation region, the IGBT region, and the diode region, inside the semiconductor substrate. A collector region that extends across the isolation region, the IGBT region and the diode region, and a cathode region positioned in the diode region, are formed in a region exposed on a lower surface of the semiconductor substrate. A boundary between the collector region and the cathode region is in the diode region, in a cross-section that cuts across a boundary between the isolation region and the diode region, and divides the isolation region and the diode region. The collector region formed in the isolation region has a higher dopant impurity concentration than the collector region in the IGBT region.

The silicon nitride layer 910 formed by plasma CVD using a gas containing a hydrogen compound such as silane (SiH4) and ammonia (NH3) is provided on and in direct contact with the oxide semiconductor layer 905 used for the resistor 354, and the silicon nitride layer 910 is provided over the oxide semiconductor layer 906 used for the thin film transistor 355 with the silicon oxide layer 909 serving as a barrier layer interposed therebetween. Therefore, a higher concentration of hydrogen is introduced into the oxide semiconductor layer 905 than into the oxide semiconductor layer 906. As a result, the resistance of the oxide semiconductor layer 905 used for the resistor 354 is made lower than that of the oxide semiconductor layer 906 used for the thin film transistor 355.

To provide a semiconductor device which has transistor characteristics with little variation and includes an oxide semiconductor. The semiconductor device includes an insulating film over a conductive film and an oxide semiconductor film over the insulating film. The oxide semiconductor film includes a first oxide semiconductor layer, a second oxide semiconductor layer over the first oxide semiconductor layer, and a third oxide semiconductor layer over the second oxide semiconductor layer. The energy level of a bottom of a conduction band of the second oxide semiconductor layer is lower than those of the first and third oxide semiconductor layers. An end portion of the second oxide semiconductor layer is positioned on an inner side than an end portion of the first oxide semiconductor layer.

It is an object to provide a highly reliable semiconductor device with good electrical characteristics and a display device including the semiconductor device as a switching element. In a transistor including an oxide semiconductor layer, a needle crystal group provided on at least one surface side of the oxide semiconductor layer grows in a c-axis direction perpendicular to the surface and includes an a-b plane parallel to the surface, and a portion except for the needle crystal group is an amorphous region or a region in which amorphousness and microcrystals are mixed. Accordingly, a highly reliable semiconductor device with good electrical characteristics can be formed.

A semiconductor device including a circuit which does not easily deteriorate is provided. The semiconductor device includes a first transistor, a second transistor, a first switch, a second switch, and a third switch. A first terminal of the first transistor is connected to a first wiring. A second terminal of the first transistor is connected to a second wiring. A gate and a first terminal of the second transistor are connected to the first wiring. A second terminal of the second transistor is connected to a gate of the first transistor. The first switch is connected between the second wiring and a third wiring. The second switch is connected between the second wiring and the third wiring. The third switch is connected between the gate of the first transistor and the third wiring.

An amorphous oxide thin film containing amorphous oxide is exposed to an oxygen plasma generated by exciting an oxygen-containing gas in high frequency. The oxygen plasma is preferably generated under the condition that applied frequency is 1 kHz or more and 300 MHz or less and pressure is 5 Pa or more. The amorphous oxide thin film is preferably exposed by a sputtering method, ion-plating method, vacuum deposition method, sol-gel method or fine particle application method.

An object is to manufacture and provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which a semiconductor layer including a channel formation region serves as an oxide semiconductor film, heat treatment for reducing impurities such as moisture (heat treatment for dehydration or dehydrogenation) is performed after an oxide insulating film serving as a protective film is formed in contact with an oxide semiconductor layer. Then, the impurities such as moisture, which exist not only in a source electrode layer, in a drain electrode layer, in a gate insulating layer, and in the oxide semiconductor layer but also at interfaces between the oxide semiconductor film and upper and lower films which are in contact with the oxide semiconductor layer, are reduced.

A transistor device includes a compound semiconductor body having a first surface and a two-dimensional charge carrier gas disposed below the first surface in the compound semiconductor body. The transistor device further includes a source in contact with the two-dimensional charge carrier gas and a drain spaced apart from the source and in contact with the two-dimensional charge carrier gas. A first passivation layer is in contact with the first surface of the compound semiconductor body, and a second passivation layer is disposed on the first passivation layer. The second passivation layer has a different etch rate selectivity than the first passivation layer. A gate extends through the second passivation layer into the first passivation layer.

A tool comprising a tool body having an opening defined by interior walls extending into the tool body and a casing disposed within the opening. The tool further includes a scintillator material disposed within the casing and a first compressive member disposed within the tool body at a first axial location. The first axial location extends for a fraction of a total axial length of the casing and exerts a first radially compressive force at the first axial location.

A radiation detector is disclosed that includes a scintillation crystal and a plurality of photodetectors positioned to detect low-energy scintillation photons generated within the scintillation crystal. The scintillation crystals are processed using subsurface laser engraving to generate point-like defects within the crystal to alter the path of the scintillation photons. In one embodiment, the defects define a plurality of boundaries within a monolithic crystal to delineate individual detector elements. In another embodiment, the defects define a depth-of-interaction boundary that varies longitudinally to vary the amount of light shared by neighboring portions of the crystal. In another embodiment the defects are evenly distributed to reduce the lateral spread of light from a scintillation event. Two or more of these different aspects may be combined in a single scintillation crystal. Additionally, or alternatively, similar SSLE defects may be produced in other light-guiding elements of the radiation detector.

Disclosed is a scintillator panel provided with on a support a phosphor layer comprising columnar crystals and a protective layer sequentially in this order, wherein degraded areas on lateral surfaces of columnar crystals at an end of the phosphor layer and produced by a cutting treatment account for not less than 0% and not more than 40% of an area of all of the side surfaces of the columnar crystals. A production method of the scintillator panel is also disclosed.

An approach is disclosed for acquiring multi-sector computed tomography scan data. The approach includes activating an X-ray source during heartbeats of a patient to acquire projection data over a limited angular range for each heartbeat. The projection data acquired over the different is combined. An image having good temporal resolution is reconstructed using the combined projection data.

A fluidized bed reactor includes a bottom portion, a roof portion, and side walls vertically extending between the bottom portion and the roof portion, forming a reaction chamber of the reactor. At least one side wall of the reaction chamber forms at least one vertical indentation in the reaction chamber, which indentation extends from the plane of the at least one side wall towards the reaction chamber. The indentation extending from the plane of the at least one side wall towards the reaction chamber is formed of a portion of the at least one side wall, protruding from the plane of the at least one side wall towards the reaction chamber, and the portion of the at least one side wall includes at least two substantially vertical indenting wall portions deviating from the plane of the at least one side wall at vertical lines within a distance from each other.

A semiconductor device, in particular a solar cell, comprises a semiconductor substrate having a semiconductor substrate surface and a passivation composed of at least one passivation layer which surface-passivates the semiconductor substrate surface, wherein the passivation layer comprises a compound composed of aluminum oxide, aluminum nitride or aluminum oxynitride and at least one further element.

Accordingly, a method of forming a metal chalcogenide material may comprise introducing at least one metal precursor and at least one chalcogen precursor into a chamber comprising a substrate, the at least one metal precursor comprising an amine or imine compound of an alkali metal, an alkaline earth metal, a transition metal, a post-transition metal, or a metalloid, and the at least one chalcogen precursor comprising a hydride, alkyl, or aryl compound of sulfur, selenium, or tellurium. The at least one metal precursor and the at least one chalcogen precursor may be reacted to form a metal chalcogenide material over the substrate. A method of forming a metal telluride material, a method of forming a semiconductor device structure, and a semiconductor device structure are also described.

An optoelectronic semiconductor component includes a radiation emitting semiconductor chip having a radiation coupling out area. Electromagnetic radiation generated in the semiconductor chip leaves the semiconductor chip via the radiation coupling out area. A converter element is disposed downstream of the semiconductor chip at its radiation coupling out area. The converter element is configured to convert electromagnetic radiation emitted by the semiconductor chip. The converter element has a first surface facing away from the radiation coupling out area. A reflective encapsulation encapsulates the semiconductor chip and portions of the converter element at side areas in a form-fitting manner. The first surface of the converter element is free of the reflective encapsulation.

A solar energy collection system can include support devices made with bearings formed from sheet material. These bearings can be optionally formed so as to provide tool-less connections to their associated bearing housings. The bearings can be formed with an open configuration allowing a shaft to be inserted into an open bite of the bearing. Optionally, the bearing can be made from an ultrahigh molecular weight polyethylene plastic material. Additionally, two open-type bearing assemblies can be mounted axially offset and opposed to one another.

According to one embodiment, a tractor comprises a guide shaft, a first belt unit, a second belt unit, a fixing unit and a connecting unit. The first belt unit is supported by the guide shaft so as to move in an axis direction of the guide shaft. The second belt unit is arranged to face the first belt unit in the axis direction of the guide shaft and supported by the guide shaft. The fixing unit, which is movably supported by the guide shaft in the axis direction of the guide shaft and is capable of being fixed on the guide shaft. The connecting unit configured to connect the first belt unit to the fixing unit with a clearance in the axis direction of the guide shaft.

A method of manufacturing a power contactor from an existing contactor having a magnetic amplifier that comprises a blowout coil and a ferromagnetic core, and an arc chute for extinguishing an arc generated by opening the existing contactor under a current load is disclosed. The method includes removing a bolt assembly from the existing contactor and at least one side plate from the existing contactor. The method also includes removing the ferromagnetic core from the existing contactor.

Provided is a sector gear including: a drive gear having a drive part that forms a part of a circle and has a plurality of teeth and a non-drive part that forms a remaining part of the circle and provides a non-contact angle of at least approximately 90 degrees; first and second movers forming a disconnector and a grounded breaking switch, respectively; and first and second driven gears engaged with the drive gear and respectively engaged with the first and second movers and configured to make the first mover or the second mover operate in conjunction with the drive part of the drive gear according to a direction of rotation of the drive gear, wherein an intermediate angle between the first and second movers is between approximately 90-135 degrees. The present invention can reduce the size of the gas-insulated switchgear having the sector gear.

A multi-standard flash-memory-card carrier is about the same size as a thick credit card and fits into a wallet. The multi-standard flash-memory-card carrier has bays that accept flash-memory cards. Larger bays on one side receive SD cards and a Memory Stick Duo card, while micro bays on another side of the carrier receive microSD cards and Memory Stick Micro cards. A carrier spine sandwiched between top and bottom covers has openings forming the bays. Spring-clip tabs on spring-clip fingers fit into notches on the side of the flash-memory cards to secure the flash-memory cards into the multi-standard flash-memory-card carrier to prevent loss. The spring-clip fingers are movable parts of the carrier spine that are deformed during insertion of the flash-memory cards. Both micro and standard flash-memory cards can be carried in the same multi-standard flash-memory-card carrier that can be placed in plastic sleeves for credit cards in a person's wallet.

An input receiver circuit including a single-to-differential amplifier and a semiconductor device including the input receiver circuit are disclosed. The input receiver circuit includes a first stage amplifier unit and a second stage amplifier unit. The first stage amplifier unit amplifies a single input signal in a single-to-differential mode to generate a differential output signal, without using a reference voltage. The second stage amplifier unit amplifies the differential output signal in a differential-to-single mode to generate a single output signal.

A microwave semiconductor amplifier includes a semiconductor amplifier element, an input matching circuit and an output matching circuit. The semiconductor amplifying element includes an input electrode and an output electrode and has a capacitive output impedance. The input matching circuit is connected to the input electrode. The output matching circuit includes a bonding wire and a first transmission line. The bonding wire includes first and second end portions. The first end portion is connected to the output electrode. The second end portion is connected to one end portion of the first transmission line. A fundamental impedance and a second harmonic impedance seen toward the external load change toward the one end portion. The second harmonic impedance at the one end portion has an inductive reactance. The output matching circuit matches the capacitive output impedance of the semiconductor amplifying element to the fundamental impedance of the external load.

A semiconductor package device comprises a radio frequency power transistor having an output port operably coupled to a single de-coupling capacitance located within the semiconductor package device. The single de-coupling capacitance is arranged to provide both high frequency decoupling and low frequency decoupling of signals output from the radio frequency power transistor.