An object is to manufacture a semiconductor device with high reliability by providing the semiconductor device including an oxide semiconductor with stable electric characteristics. In a transistor including an oxide semiconductor layer, a gallium oxide film is used for a gate insulating layer and made in contact with an oxide semiconductor layer. Further, gallium oxide films are provided so as to sandwich the oxide semiconductor layer, whereby reliability is increased. Furthermore, the gate insulating layer may have a stacked structure of a gallium oxide film and a hafnium oxide film.

A semiconductor device includes wiring layers formed over a semiconductor wafer, a via-layer between the wiring layers, conductive films in the wiring layers, and a via-plug in the via-layer connecting the conductive films of the wiring layers above and below, a scribe region at an outer periphery of a chip region along an edge of the semiconductor substrate and including a pad region in the vicinity of the edge, the pad region overlapping the conductive films of the plurality of wiring layers in the plan view, the plurality of wiring layers including first second wiring layers, the conductive film of the first wiring layer includes a first conductive pattern formed over an entire surface of said pad region in a plan view, and the conductive film of the second wiring layer includes a second conductive pattern formed in a part of the pad region in a plan view.

An object is to provide a semiconductor device including an oxide semiconductor film, which has stable electrical characteristics and high reliability. A stack of first and second material films is formed by forming the first material film (a film having a hexagonal crystal structure) having a thickness of 1 nm to 10 nm over an insulating surface and forming the second material film having a hexagonal crystal structure (a crystalline oxide semiconductor film) using the first material film as a nucleus. As the first material film, a material film having a wurtzite crystal structure (e.g., gallium nitride or aluminum nitride) or a material film having a corundum crystal structure (α-Al2O3, α-Ga2O3, In2O3, Ti2O3, V2O3, Cr2O3, or α-Fe2O3) is used.

A semiconductor device, includes a semiconductor substrate, a first interconnect layer formed over the semiconductor substrate, a gate electrode formed in the first interconnect layer, a gate insulating film formed over the gate electrode, a second interconnect layer formed over the gate insulating film, an oxide semiconductor layer formed in the second interconnect layer, and a via formed in the second interconnect layer and connected to the oxide semiconductor layer. The gate electrode, the gate insulating film and the oxide semiconductor layer overlap in a plan view.

It is an object to manufacture a highly reliable semiconductor device including a thin film transistor whose electric characteristics are stable. An insulating layer which covers an oxide semiconductor layer of the thin film transistor contains a boron element or an aluminum element. The insulating layer containing a boron element or an aluminum element is formed by a sputtering method using a silicon target or a silicon oxide target containing a boron element or an aluminum element. Alternatively, an insulating layer containing an antimony (Sb) element or a phosphorus (P) element instead of a boron element covers the oxide semiconductor layer of the thin film transistor.

A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided. Further, a method for manufacturing a semiconductor device in which plural kinds of thin film transistors of different structures are formed over one substrate to form plural kinds of circuits and in which the number of steps is not greatly increased is provided. After a metal thin film is formed over an insulating surface, an oxide semiconductor layer is formed thereover. Then, oxidation treatment such as heat treatment is performed to oxidize the metal thin film partly or entirely. Further, structures of thin film transistors are different between a circuit in which emphasis is placed on the speed of operation, such as a logic circuit, and a matrix circuit.

A semiconductor film having an impurity region to which at least an n-type or p-type impurity is added and a wiring are provided. The wiring includes a diffusion prevention film containing a conductive metal oxide, and a low resistance conductive film over the diffusion prevention film. In a contact portion between the wiring and the semiconductor film, the diffusion prevention film and the impurity region are in contact with each other. The diffusion prevention film is framed in such a manner that a conductive film is exposed to plasma generated from a mixed gas of an oxidizing gas and a halogen-based gas to form an oxide of a metal material contained in the conductive film, the conductive film in which the oxide of the metal material is formed is exposed to an atmosphere containing water to be fluidized, and the fluidized conductive film is solidified.

Methods, devices, and systems are provided for a select device that can include a semiconductive stack of at least one semiconductive material formed on a first electrode, where the semiconductive stack can have a thickness of about 700 angstroms (Å) or less. Each of the at least one semiconductive material can have an associated band gap of about 4 electron volts (eV) or less and a second electrode can be formed on the semiconductive stack.

To provide a semiconductor device which has transistor characteristics with little variation and includes an oxide semiconductor. The semiconductor device includes an insulating film over a conductive film and an oxide semiconductor film over the insulating film. The oxide semiconductor film includes a first oxide semiconductor layer, a second oxide semiconductor layer over the first oxide semiconductor layer, and a third oxide semiconductor layer over the second oxide semiconductor layer. The energy level of a bottom of a conduction band of the second oxide semiconductor layer is lower than those of the first and third oxide semiconductor layers. An end portion of the second oxide semiconductor layer is positioned on an inner side than an end portion of the first oxide semiconductor layer.

An amorphous oxide thin film containing amorphous oxide is exposed to an oxygen plasma generated by exciting an oxygen-containing gas in high frequency. The oxygen plasma is preferably generated under the condition that applied frequency is 1 kHz or more and 300 MHz or less and pressure is 5 Pa or more. The amorphous oxide thin film is preferably exposed by a sputtering method, ion-plating method, vacuum deposition method, sol-gel method or fine particle application method.

An object is to manufacture and provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which a semiconductor layer including a channel formation region serves as an oxide semiconductor film, heat treatment for reducing impurities such as moisture (heat treatment for dehydration or dehydrogenation) is performed after an oxide insulating film serving as a protective film is formed in contact with an oxide semiconductor layer. Then, the impurities such as moisture, which exist not only in a source electrode layer, in a drain electrode layer, in a gate insulating layer, and in the oxide semiconductor layer but also at interfaces between the oxide semiconductor film and upper and lower films which are in contact with the oxide semiconductor layer, are reduced.

A vehicle collision damage mitigation system includes: a vehicle having a crashable zone on a front side of a dash panel in a vehicle longitudinal direction; a body airbag device that inflates a body airbag that is provided on a front surface of the dash panel by a pressure of gas generated by a gas generating device; a detector that detects whether a mode of a frontal collision of the vehicle is a full-overlap collision or another collision; and a control unit that operates the gas generating device when detecting a collision other than the full-overlap collision on the basis of a detection result of the detector and that does not operate the gas generating device when detecting the full-overlap collision.

A control arrangement for a hydropneumatic suspension system and a hydropneumatic suspension system are provided. The control arrangement has a pressure supply connection, a return connection, a piston chamber connection adapted to be connected to the piston chamber of a suspension cylinder of the hydropneumatic suspension system, an annular chamber connection adapted to be connected to the annular chamber of the suspension cylinder, and at least one controllable valve arrangement comprising a plurality of switch positions via which the pressure supply connection and the return connection are connectable to the piston chamber connection and the annular chamber connection. The annular chamber connection is in flow connection with the return connection via a pressure-limiting line having a hydraulically controllable pressure-limiting element. The pressure-limiting element has a control input adapted to be acted upon via a control line by a control pressure which is limitable to a predefinable pressure limit.

Interior panels having integrated airbag doors for motor vehicles and methods for making such interior panels are provided herein. In one example, an interior panel comprises a substrate having outer and inner surfaces and an opening extending therethrough. A multi-shot injection molded airbag chute-door assembly is mounted to the substrate and comprises a chute wall that at least partially surrounds an interior space. A door flap portion is pivotally connected to the chute wall and at least partially covers the opening. A perimeter flange extends from the chute wall and has a flange section that overlies the outer surface of the substrate. A molded-in lip feature extends from the flange section and contacts the outer surface to form a seal between the flange section and the substrate. A skin covering extends over the substrate and a foam is disposed between the skin covering and the substrate.

A pre-weakened cover of an airbag module is provided including a layer having an outer show surface and an opposing inner surface. A plurality of first cuts is arranged at a first angle on the inner surface. A plurality of second cuts is arranged at a second angle on the inner surface. Each of the second cuts intersects two adjacent first cuts to form a generally V-shaped pattern.

A pre-weakened cover of an airbag module is provided including a layer having an outer show surface and an opposing inner surface. A plurality of first cuts is arranged at a first angle on the inner surface. A plurality of second cuts is arranged at a second angle on the inner surface. Each of the second cuts intersects two adjacent first cuts to form a generally V-shaped pattern.

A drilling control system monitors and compares drilling and completion operation sensor values and autonomously acts in response to conditions such as a kick or surge. Sensors in various combinations may monitor return fluid flow rate, fluid inflow rate, wellhead bore pressure, temperature of returning fluid, torque, rate of penetration and string weight change. The control system has corresponding control logic to monitor, warn and act based on the sensor inputs. The actions may include the warning of support personnel, closing an annular blowout preventer, shearing drill pipe using a ram shear, pumping heavier fluid down choke and kill lines, disconnecting the riser or various other actions.

Apparatus and method for automated drilling of a borehole in a subsurface formation. In one embodiment, a method includes selecting at least one control variable. A drilling performance objective having a value that is influenced by drilling of the borehole using the at least one control variable is defined. A first interval of the borehole is drilled maintaining the at least one control variable at a first value. A second interval of the borehole is drilled maintaining the at least one control variable at a second value. A third interval of the borehole is drilled maintaining the at least one control variable at a third value. The third value is selected based on a comparison of the values of the drilling performance objective while drilling the first interval and second interval to a predetermined optimal value of the drilling performance objective.

A method of monitoring a well for unwanted formation fluid influx is disclosed. Measurements of well outflow are acquired during a period in which drilling operations are performed for the well. Occurrences of stagnant flow events during the period are determined. An outflow signature is generated from the well outflow measurements for each stagnant flow event. The outflow signatures are displayed sequentially in time of occurrence. Each outflow signature is analyzed for an anomaly.

Controlling electromagnetic (‘EM’) radiation in a data center having a number EM sections, including: receiving, by an EM controller, a specification of preferred EM radiation characteristics for the data center; and setting, by the EM controller, a state of each EM section in accordance with the specification, where the state of each EM section may be one of: an absorption state in which the EM section absorbs EM radiation or a reflection state in which the EM section reflects EM radiation.

The present invention provides a blanking apparatus comprising a plurality of blankers configured to respectively blank a plurality of beams with respect to a target position on an object, and a driving device configured to drive the plurality of blankers, wherein the driving device includes a change device configured to change relation between a combination of beams of the plurality of beams, and a target dose.

The invention relates to a thermal conduction element (20) for a package for transporting and/or storing radioactive materials, comprising: an internal part (30) intended to be in contact with a lateral body (14) of the package;an external part (34) intended to form a portion of an external envelope (24) of said package, holding radiological protection means (22);an intermediate part (32) arranged between the internal and external parts,the internal, external and intermediate parts being produced from copper and one of the alloys thereof. According to the invention, the external part (34) is equipped, at each of its two opposite ends, with an area (36) for connection by welding to another thermal conduction element (20), each connection area (36) being produced from steel.

A system for measuring properties of a surface under test with surface waves includes a surface wave network including a dielectric substrate, a reactive grid of a plurality of metallic patches on a first surface of the dielectric substrate, a plurality of electronic nodes on the first surface of the dielectric substrate, and a ground plane on a second surface of the dielectric substrate permeable to RF fields of the surface waves, and a controller configured for causing a respective one of the electronic nodes to transmit at least one surface wave and configured for collecting data for signals received by at least one other of the plurality of electronic nodes.

Examples of the present invention include apparatus and methods for monitoring aging of an item. A solid-state structure is located within, adjacent to, or otherwise proximate the item, the solid-state structure including nanostructures. The electrical resistance and/or magnetization of the solid-state structure is determined to determine the degree of aging of the item. In representative examples, the solid-state structure includes nanostructures of a metal, such as a ferromagnetic metal, within a non-magnetic matrix, such as a semimetal, semiconductor, or insulator.

A camera array, an imaging device and/or a method for capturing image that employ a plurality of imagers fabricated on a substrate is provided. Each imager includes a plurality of pixels. The plurality of imagers include a first imager having a first imaging characteristics and a second imager having a second imaging characteristics. The images generated by the plurality of imagers are processed to obtain an enhanced image compared to images captured by the imagers. Each imager may be associated with an optical element fabricated using a wafer level optics (WLO) technology.

An approach is disclosed for acquiring multi-sector computed tomography scan data. The approach includes activating an X-ray source during heartbeats of a patient to acquire projection data over a limited angular range for each heartbeat. The projection data acquired over the different is combined. An image having good temporal resolution is reconstructed using the combined projection data.

The invention relates to a device (10; 10a;10b; 10c; 50) for checking pharmaceutical products (1), in particular hard gelatin capsules, by means of at least one radiation source (30; 60) preferably embodied as an X-ray source, and a conveying device which conveys the products (1) in a clocked manner in a radiation area (31) of the radiation source (30; 60). The radiation emitted by the radiation source (30; 60) penetrating the products (1) preferably perpendicular to the longitudinal axes thereof (2), and the radiation is captured on the side of the products (1) opposite the radiation source (30) by means of at least one sensor element (35) which is coupled to an evaluation device (36). The invention is characterized in that the conveyor device is embodied as a conveyor wheel (15; 15a; 51) which can rotate in a stepped manner about an axis (12; 52), and the products (1) are arranged, while being conveyed in the radiation area (31), in receiving areas (28; 37; 56) of the conveyor wheel (15; 5a; 51).

A method and apparatus for acquiring data from a mass spectrometer and its transmission to a computer system including a data acquisition engine, a network interface and a throughput optimization module which includes a ring buffer and a protocol stack. A compression engine may be provided between the acquisition engine and the ring buffer. The ring buffer is configured as a number of segments containing portions of memory matching the size of data words from the acquisition engine. When a segment is full of data corresponding to the words, or is partially full and has received data containing an end of scan marker, the number of words in the segment is written into a header word in the segment and the data in that segment are moved to the protocol stack. Subsequent data is received by the next segment in the buffer.

The present invention relates to a method of mass spectrometry, an apparatus adapted to perform the method and a mass spectrometer. More particularly, but not exclusively, the present invention relates to a method of mass spectrometry comprising the step of associating parent and fragmentation ions from a sample by measuring the parent and fragmentation ions from two or more different areas of the sample and identifying changes in the number of parent ions between the areas in the sample, and corresponding changes in the number of fragmentation ions between the two areas.

An apparatus comprises a plasma flood gun for neutralizing a positive charge buildup on a semiconductor wafer during a process of ion implantation using an ion beam. The plasma flood gun comprises more than two arc chambers, wherein each arc chamber is configured to generate and release electrons into the ion beam in a respective zone adjacent to the semiconductor wafer.

Provided is an A/D converter including an input terminal, a reference signal line for supplying a reference signal which changes temporally, a comparator, a correction capacitor connected to an inverting input terminal of the comparator; and an output circuit which outputs digital data corresponding to an analog signal input to the input terminal. In a first state in which a total voltage of a first analog signal and an offset voltage of the comparator is held in the correction capacitor, a second analog signal input to the input terminal is supplied to a non-inverting input terminal of the comparator, and the second analog signal or the total voltage is changed using the reference signal, thereby outputting, from the output circuit, digital data.

Mass spectrometers and methods for measuring information about samples using mass spectrometry are disclosed.

Image sensors and methods of operating the same. An image sensor includes a pixel array including a plurality of pixels. Each of the plurality of pixels includes a photo sensor, the voltage-current characteristics of which vary according to energy of incident light, and that generates a sense current determined by the energy of the incident light; a reset unit that is activated to generate a reference current, according to a reset signal for resetting at least one of the plurality of pixels; and a conversion unit that converts the sense current and the reference current into a sense voltage and a reference voltage, respectively.

According to one embodiment, a solid state imaging device includes a sensor substrate having a plurality of pixels formed on an upper face, a microlens array substrate having a plurality of microlenses formed and a connection post with one end bonded to a region between the microlenses on the microlens array substrate and with the other end bonded to the upper face.

An arrangement for, and a method of, electro-optically reading a target by image capture, employ an aiming assembly for projecting an aiming light pattern on the target that is located within a range of working distances relative to a housing, an imaging assembly for capturing an image of the target and of the aiming light pattern over a field of view, and a controller for determining a distance of the target relative to the housing based on a position of the aiming light pattern in the captured image, for determining a scanning resolution based on the determined distance, for comparing the determined scanning resolution with a scanning resolution setting, and for processing the captured image based on the comparison.

An example particle accelerator includes a coil to provide a magnetic field to a cavity; a cryostat comprising a chamber for holding the coil, where the coil is arranged in the chamber to define an interior region of the coil and an exterior region of the coil; magnetic structures adjacent to the cryostat, where the magnetic structures have one or more slots at least part-way therethrough; and one or more magnetic shims in one or more corresponding slots. The one or more magnetic shims are movable to adjust a position of the coil by changing a magnetic field produced by the magnetic structures.

An aspect of the present invention is a method of processing a waste material that contains mercury or a mercury compound, and chlorine or a mercury chloride, the method including a step of adding a chlorine scavenger to the waste material, and stowing the waste material in a treatment vessel; and a step of subjecting the waste material to a blasting treatment by fitting an explosive to the treatment vessel and detonating the explosive inside a pressure-proof container.

A pulverized coal thermal power generation system that significantly reduces the amount of NOx emissions from a boiler and does not require a denitration unit is provided. When a denitration unit is not used, performance to remove mercury from a boiler waste gas is reduced. A waste gas purification system for a pulverized coal boiler, that compensates for this is provided. A pulverized coal boiler having a furnace for burning pulverized coal, burners for supplying pulverized coal and air used for combustion into the furnace so as to burn the pulverized coal in an insufficient air state and after-air ports provided on the downstream side of the burners for supplying air used for perfect combustion characterized in that, an air ratio in the furnace is 1.05 to 1.14, and the residence time of a combustion gas from the burner disposed on the uppermost stage to a main after-air port is 1.1 to 3.3 seconds. Preferably, water is mixed in advance with the air supplied from the after-air port so as to increase the specific heat. Furthermore, pulverized coal carrying air in the burner and a part of air used for combustion are mixed together in advance before they are jetted into the furnace.A waste gas purification system having a pulverized coal boiler, an air heater disposed downstream of the pulverized coal boiler for exchanging heat with a boiler waste gas to heat air used for combustion in the pulverized coal boiler, a dust removing unit, and a desulfurizing unit characterized in that, at least one of a halogen gas supply unit, a catalyst unit for oxidizing a mercury gas, and a mercury adsorbent blowing device is provided so as to oxidize mercury included in the waste gas.

An ash basket can act as a sieve or strainer, allowing a user to lift out the charcoal from a kamado grill, clean out the ash, and place the ash basket back into the grill for future use. The ash basket retains larger pieces of charcoal that can be reused, while allowing the ash to pass through to a bottom plate of the grill. The bottom plate has openings to permit the ash to fall to an ash collection chamber. Without the ash basket, pieces of charcoal can block the openings in the bottom plate, making ash collection difficult. Moreover, with the openings blocked, proper air flow through the openings. Finally, the ash basket creates and additional air space that covers the entire surface of the interior walls by separating the ash from the wall, improving air flow, which is critical to the kamado grill design.

An apparatus for synergistically combining a plasma with a comminution means such as a fluid kinetic energy mill (jet mill), preferably in a single reactor and/or in a single process step is provided by the present invention. Within the apparatus of the invention potential energy is converted into kinetic energy and subsequently into angular momentum by means of wave energy, for comminuting, reacting and separation of feed materials. Apparatuss of use of the apparatus in the practice of various processes are also provided by the present invention.

Disclosed is a photovoltaic device. The photovoltaic device includes: a substrate; a first electrode placed on the substrate; a second electrode which is placed opposite to the first electrode and which light is incident on; a first unit cell being placed between the first electrode and the second electrode, and including an intrinsic semiconductor layer including crystalline silicon grains making the surface of the intrinsic semiconductor layer toward the second electrode textured; and a second unit cell placed between the first unit cell and the second electrode.

The present teachings relate to new semiconducting polymers. The polymers disclosed herein can exhibit high carrier mobility and/or efficient light absorption/emission characteristics, and can possess certain processing advantages such as solution-processability and/or good stability at ambient conditions.

Accordingly, a method of forming a metal chalcogenide material may comprise introducing at least one metal precursor and at least one chalcogen precursor into a chamber comprising a substrate, the at least one metal precursor comprising an amine or imine compound of an alkali metal, an alkaline earth metal, a transition metal, a post-transition metal, or a metalloid, and the at least one chalcogen precursor comprising a hydride, alkyl, or aryl compound of sulfur, selenium, or tellurium. The at least one metal precursor and the at least one chalcogen precursor may be reacted to form a metal chalcogenide material over the substrate. A method of forming a metal telluride material, a method of forming a semiconductor device structure, and a semiconductor device structure are also described.

An organic compound and a photoelectric conversion device containing the organic compound are disclosed. The organic compound and device realize high photoelectric conversion efficiency, low dark current and high-speed responsivity. It has been found that when this organic compound and an n-type semiconductor are used in combination, high-speed responsivity can be realized while maintaining high heat resistance, an aspect of which has not been seen when the connection part between a donor part and an acceptor part is a phenylene group.

An improved method and apparatus for thermal-to-electric conversion involving relatively hot and cold juxtaposed surfaces separated by a small vacuum gap wherein the cold surface provides an array of single charge carrier converter elements along the surface and the hot surface transfers excitation energy to the opposing cold surface across the gap through Coulomb electrostatic coupling interaction.

A back electrode type solar cell in which a no-electrode-formed region where no electrode is placed is provided in a part of a peripheral portion of a back surface of the back electrode type solar cell such that a line connecting end portions of a plurality of electrodes to one another includes a partially inwardly recessed region and the no-electrode-formed region is located adjacent to each of an electrode for n-type and an electrode for p-type adjacent to each other, a solar cell module, a method of manufacturing a back electrode type solar cell with interconnection sheet, and a method of manufacturing a solar cell module are provided.

The present invention provides a photoelectric conversion material comprising a fullerene derivative represented by the formula C60(R1)5(R2), wherein each R1 independently represents an organic group having a substituent; and R2 represents a hydrogen atom or a substituted or unsubstituted C1-C30 hydrocarbon group. Further, the present invention also provides a photoelectric conversion device having a self-assembled monomolecular film of the photoelectric conversion material, and a solar cell having the photoelectric conversion device.

A photovoltaic cell comprises a top subcell having a first band gap; a middle subcell comprising a substrate and having a second band gap, wherein the substrate comprises a first side and a second side opposite to the first side; and a bottom subcell having a third band gap, wherein the top subcell is grown on the first side of the substrate and the bottom subcell is grown on the second side of the substrate, wherein the first band gap is larger than the second band gap and the second band gap is larger than the third band gap.

Hemispheres and spheres are formed and employed for a plurality of applications. Hemispheres are employed to form a substrate having an upper surface and a lower surface. The upper surface includes peaks of pillars which have a base attached to the lower surface. The peaks have a density defined at the upper surface by an array of hemispherical metal structures that act as a mask during an etch to remove substrate material down to the lower surface during formation of the pillars. The pillars are dense and uniform and include a microscale average diameter. The spheres are formed as independent metal spheres or nanoparticles for other applications.

A photovoltaic device including a substrate; a first electrode placed on the substrate; a second electrode which is placed opposite to the first electrode and which light is incident on; a first unit cell being placed between the first electrode and the second electrode, and including an intrinsic semiconductor layer including crystalline silicon grains making the surface of the intrinsic semiconductor layer toward the second electrode textured; and a second unit cell placed between the first unit cell and the second electrode.