According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a light emitting unit, a second semiconductor layer, a reflecting electrode, an oxide layer and a nitrogen-containing layer. The first semiconductor layer is of a first conductivity type. The light emitting unit is provided on the first semiconductor layer. The second semiconductor layer is provided on the light emitting unit and is of a second conductivity type. The reflecting electrode is provided on the second semiconductor layer and includes Ag. The oxide layer is provided on the reflecting electrode. The oxide layer is insulative and has a first opening. The nitrogen-containing layer is provided on the oxide layer. The nitrogen-containing layer is insulative and has a second opening communicating with the first opening.

An electronic device includes a silicon carbide layer including an n-type drift region therein, a contact forming a junction, such as a Schottky junction, with the drift region, and a p-type junction barrier region on the silicon carbide layer. The p-type junction barrier region includes a p-type polysilicon region forming a P-N heterojunction with the drift region, and the p-type junction barrier region is electrically connected to the contact. Related methods are also disclosed.

An object is to provide a semiconductor device including an oxide semiconductor film, which has stable electrical characteristics and high reliability. A stack of first and second material films is formed by forming the first material film (a film having a hexagonal crystal structure) having a thickness of 1 nm to 10 nm over an insulating surface and forming the second material film having a hexagonal crystal structure (a crystalline oxide semiconductor film) using the first material film as a nucleus. As the first material film, a material film having a wurtzite crystal structure (e.g., gallium nitride or aluminum nitride) or a material film having a corundum crystal structure (α-Al2O3, α-Ga2O3, In2O3, Ti2O3, V2O3, Cr2O3, or α-Fe2O3) is used.

A semiconductor device, includes a semiconductor substrate, a first interconnect layer formed over the semiconductor substrate, a gate electrode formed in the first interconnect layer, a gate insulating film formed over the gate electrode, a second interconnect layer formed over the gate insulating film, an oxide semiconductor layer formed in the second interconnect layer, and a via formed in the second interconnect layer and connected to the oxide semiconductor layer. The gate electrode, the gate insulating film and the oxide semiconductor layer overlap in a plan view.

Semiconductor devices including a stressor in a recess and methods of forming the semiconductor devices are provided. The methods may include forming a trench in an active region and the trench may include a notched portion of the active region. The methods may also include forming an embedded stressor in the trench. The embedded stressor may include a lower semiconductor layer and an upper semiconductor layer, which has a width narrower than a width of the lower semiconductor layer. A side of the upper semiconductor layer may not be aligned with a side of the lower semiconductor layer and an uppermost surface of the upper semiconductor layer may be higher than an uppermost surface of the active region.

It is an object to manufacture a highly reliable semiconductor device including a thin film transistor whose electric characteristics are stable. An insulating layer which covers an oxide semiconductor layer of the thin film transistor contains a boron element or an aluminum element. The insulating layer containing a boron element or an aluminum element is formed by a sputtering method using a silicon target or a silicon oxide target containing a boron element or an aluminum element. Alternatively, an insulating layer containing an antimony (Sb) element or a phosphorus (P) element instead of a boron element covers the oxide semiconductor layer of the thin film transistor.

A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided. Further, a method for manufacturing a semiconductor device in which plural kinds of thin film transistors of different structures are formed over one substrate to form plural kinds of circuits and in which the number of steps is not greatly increased is provided. After a metal thin film is formed over an insulating surface, an oxide semiconductor layer is formed thereover. Then, oxidation treatment such as heat treatment is performed to oxidize the metal thin film partly or entirely. Further, structures of thin film transistors are different between a circuit in which emphasis is placed on the speed of operation, such as a logic circuit, and a matrix circuit.

A light-emitting element includes a first electrode, a first light-emitting layer formed over the first electrode, a second light-emitting layer formed on and in contact with the first light-emitting layer to be in contact therewith, and a second electrode formed over the second light-emitting layer. The first light-emitting layer includes a first light-emitting substance and a hole-transporting organic compound, and the second light-emitting layer includes a second light-emitting substance and an electron-transporting organic compound. Substances are selected such that a difference in LUMO levels between the first light-emitting substance, the second light-emitting substance, and the electron-transporting organic compound is 0.2 eV or less, a difference in HOMO levels between the hole-transporting organic compound, the first light-emitting substance, and the second light-emitting substance is 0.2 eV or less, and a difference in LUMO levels between the hole-transporting organic compound and the first light-emitting substance is greater than 0.3 eV.

A semiconductor film having an impurity region to which at least an n-type or p-type impurity is added and a wiring are provided. The wiring includes a diffusion prevention film containing a conductive metal oxide, and a low resistance conductive film over the diffusion prevention film. In a contact portion between the wiring and the semiconductor film, the diffusion prevention film and the impurity region are in contact with each other. The diffusion prevention film is framed in such a manner that a conductive film is exposed to plasma generated from a mixed gas of an oxidizing gas and a halogen-based gas to form an oxide of a metal material contained in the conductive film, the conductive film in which the oxide of the metal material is formed is exposed to an atmosphere containing water to be fluidized, and the fluidized conductive film is solidified.

When a semiconductor substrate of a semiconductor device is viewed from above, an isolation region, an IGBT region, and a diode region are all formed adjacent to each other. A deep region that is connected to a body region and an anode region is formed in the isolation region. A drift region is formed extending across the isolation region, the IGBT region, and the diode region, inside the semiconductor substrate. A collector region that extends across the isolation region, the IGBT region and the diode region, and a cathode region positioned in the diode region, are formed in a region exposed on a lower surface of the semiconductor substrate. A boundary between the collector region and the cathode region is in the diode region, in a cross-section that cuts across a boundary between the isolation region and the diode region, and divides the isolation region and the diode region. The collector region formed in the isolation region has a higher dopant impurity concentration than the collector region in the IGBT region.

The present invention has an object of providing a light-emitting device including an OLED formed on a plastic substrate, which prevents degradation due to penetration of moisture or oxygen. On a plastic substrate, a plurality of films for preventing oxygen or moisture from penetrating into an organic light-emitting layer in the OLED (“barrier films”) and a film having a smaller stress than the barrier films (“stress relaxing film”), the film being interposed between the barrier films, are provided. Owing to a laminate structure, if a crack occurs in one of the barrier films, the other barrier film(s) can prevent moisture or oxygen from penetrating into the organic light emitting layer. The stress relaxing film, which has a smaller stress than the barrier films, is interposed between the barrier films, making it possible to reduce stress of the entire sealing film. Therefore, a crack due to stress hardly occurs.

Some embodiments include transistors having a channel region under a gate, having a source/drain region laterally spaced from the channel region by an active region, and having one or more dielectric features extending through the active region in a configuration which precludes any straight-line lateral conductive path from the channel region to the source/drain region. The dielectric features may be spaced-apart islands in some configurations. The dielectric features may be multi-branched interlocking structures in some configurations.

A protective circuit includes a non-linear element which includes a gate electrode, a gate insulating layer covering the gate electrode, a first oxide semiconductor layer overlapping with the gate electrode over the gate insulating layer, and a first wiring layer and a second wiring layer whose end portions overlap with the gate electrode over the first oxide semiconductor layer and in which a conductive layer and a second oxide semiconductor layer are stacked. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be reduced and the characteristics of the non-linear element can be improved.

Methods, devices, and systems are provided for a select device that can include a semiconductive stack of at least one semiconductive material formed on a first electrode, where the semiconductive stack can have a thickness of about 700 angstroms (Å) or less. Each of the at least one semiconductive material can have an associated band gap of about 4 electron volts (eV) or less and a second electrode can be formed on the semiconductive stack.

The silicon nitride layer 910 formed by plasma CVD using a gas containing a hydrogen compound such as silane (SiH4) and ammonia (NH3) is provided on and in direct contact with the oxide semiconductor layer 905 used for the resistor 354, and the silicon nitride layer 910 is provided over the oxide semiconductor layer 906 used for the thin film transistor 355 with the silicon oxide layer 909 serving as a barrier layer interposed therebetween. Therefore, a higher concentration of hydrogen is introduced into the oxide semiconductor layer 905 than into the oxide semiconductor layer 906. As a result, the resistance of the oxide semiconductor layer 905 used for the resistor 354 is made lower than that of the oxide semiconductor layer 906 used for the thin film transistor 355.

To provide a semiconductor device which has transistor characteristics with little variation and includes an oxide semiconductor. The semiconductor device includes an insulating film over a conductive film and an oxide semiconductor film over the insulating film. The oxide semiconductor film includes a first oxide semiconductor layer, a second oxide semiconductor layer over the first oxide semiconductor layer, and a third oxide semiconductor layer over the second oxide semiconductor layer. The energy level of a bottom of a conduction band of the second oxide semiconductor layer is lower than those of the first and third oxide semiconductor layers. An end portion of the second oxide semiconductor layer is positioned on an inner side than an end portion of the first oxide semiconductor layer.

It is an object to provide a highly reliable semiconductor device with good electrical characteristics and a display device including the semiconductor device as a switching element. In a transistor including an oxide semiconductor layer, a needle crystal group provided on at least one surface side of the oxide semiconductor layer grows in a c-axis direction perpendicular to the surface and includes an a-b plane parallel to the surface, and a portion except for the needle crystal group is an amorphous region or a region in which amorphousness and microcrystals are mixed. Accordingly, a highly reliable semiconductor device with good electrical characteristics can be formed.

A semiconductor device including a circuit which does not easily deteriorate is provided. The semiconductor device includes a first transistor, a second transistor, a first switch, a second switch, and a third switch. A first terminal of the first transistor is connected to a first wiring. A second terminal of the first transistor is connected to a second wiring. A gate and a first terminal of the second transistor are connected to the first wiring. A second terminal of the second transistor is connected to a gate of the first transistor. The first switch is connected between the second wiring and a third wiring. The second switch is connected between the second wiring and the third wiring. The third switch is connected between the gate of the first transistor and the third wiring.

By applying an AC pulse to a gate of a transistor which easily deteriorates, a shift in threshold voltage of the transistor is suppressed. However, in a case where amorphous silicon is used for a semiconductor layer of a transistor, the occurrence of a shift in threshold voltage naturally becomes a problem for a transistor which constitutes a part of circuit that generates an AC pulse. A shift in threshold voltage of a transistor which easily deteriorates and a shift in threshold voltage of a turned-on transistor are suppressed by signal input to a gate electrode of the transistor which easily deteriorates through the turned-on transistor. In other words, a structure for applying an AC pulse to a gate electrode of a transistor which easily deteriorates through a transistor to a gate electrode of which a high potential (VDD) is applied, is included.

A low resistivity interface material is provided between a self-aligned vertical heater element and a contact region of a selection device. A phase change chalcogenide material is deposited directly on the vertical heater element. In an embodiment, the vertical heater element in L-shaped, having a curved vertical wall along the wordline direction and a horizontal base. In an embodiment, the low resistivity interface material is deposited into a trench with a negative profile using a PVD technique. An upper surface of the low resistivity interface material may have a tapered bird-beak extension.

An object is to manufacture and provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which a semiconductor layer including a channel formation region serves as an oxide semiconductor film, heat treatment for reducing impurities such as moisture (heat treatment for dehydration or dehydrogenation) is performed after an oxide insulating film serving as a protective film is formed in contact with an oxide semiconductor layer. Then, the impurities such as moisture, which exist not only in a source electrode layer, in a drain electrode layer, in a gate insulating layer, and in the oxide semiconductor layer but also at interfaces between the oxide semiconductor film and upper and lower films which are in contact with the oxide semiconductor layer, are reduced.

A deployment guiding cloth is wound from an outside in the vehicle width direction, on an outer peripheral portion of a folded side airbag. This deployment guiding cloth extends toward a vehicle front side and is interposed between the side airbag that is partially deployed and a vehicle cabin side portion (a center pillar garnish and a door trim) before the side airbag is fully deployed.

A vehicle collision damage mitigation system includes: a vehicle having a crashable zone on a front side of a dash panel in a vehicle longitudinal direction; a body airbag device that inflates a body airbag that is provided on a front surface of the dash panel by a pressure of gas generated by a gas generating device; a detector that detects whether a mode of a frontal collision of the vehicle is a full-overlap collision or another collision; and a control unit that operates the gas generating device when detecting a collision other than the full-overlap collision on the basis of a detection result of the detector and that does not operate the gas generating device when detecting the full-overlap collision.

A partition for separating front and rear occupant areas of a vehicle comprises a frame and multiple panel members. The frame is attached to the vehicle and has an upper lateral member, respective angled side tubular members and a window. The multiple panel members are configured to fit vertically between the window and a floor pan and horizontally between first and second sides. The multiple panel members comprise a first panel member for positioning adjacent the first side, a second panel member for positioning adjacent the second side and a center section laterally adjacent and separating the first and second panel members. The center section protrudes rearwardly relative to the first panel member and the second panel member. The second panel member is recessed forwardly of the first panel member and forwardly of the center section to increase space available in a rear seat aligned with the second panel member.

Blast absorbing structures and system for use in absorbing blast forces exerted on a floor of a personnel cabin of a vehicle, are disclosed. The blast absorbing flexing structure comprises a bottom section forming a floor of the cabin, a first side section and opposing second side section, each side section extending from the bottom section and including a plurality of steps along a length of the second side section. The steps flex in response to a blast force. In another embodiment, the blast absorbing expanding structure comprises a force abatement device forming a floor of the cabin, a cover plate having a plurality of slots arranged around a perimeter of the plate. The cover plate is movable between a neutral position and a blast force position to diminish the blast forces prior to the blast forces to reaching an occupant of the cabin.

A retractor includes a spool configured to selectively wind and unwind the webbing, a lock base configured to operate in a free position and a locked position, a first energy absorbing member coupled to the spool and the lock base, and a second energy absorbing member coupled to the spool and the lock base. When the lock base is in the free position, the spool and lock base freely rotate together when a force is applied on the spool through the webbing. When the lock base is in the locked position and a force is applied on the spool through the webbing, rotation of the spool is permitted while rotation of the lock base is prevented, such that the first energy absorbing member absorbs a first energy and the second energy absorbing member is configured to absorb a second energy after a predetermined rotation of the spool.

A device for use in a vehicle steering system, said device comprising at least one actuator affixed to a wheel linkage of at least one wheel of said vehicle steering system. The actuator comprises a rotation assembly engagable with a first wheel linkage segment, an electric motor for actuating movement of the rotation assembly via a gear box and one or more sensors integrally contained in the actuator for sensing one or more parameters selected from the group consisting of force, speed, turns and rotation. Rotation of the rotation assembly actuates linear movement of said first wheel linkage segment into and out of said actuator to thereby adjust one or more wheel parameters of said at least one wheel, and wherein said one or more sensors provide real time data to an actuator control unit integral to said actuator to self-adjust rotational parameters of said rotation assembly.

A ski system includes a ski, a heel binding provided on an upper surface of the ski, a toe binding mount provided on the upper surface of the ski forward of the heel binding, a toe binding releasably mounted to the toe binding mount, and a quick-release locking mechanism for locking the toe binding to the toe binding mount. The quick-release locking mechanism is configured for release by hand.

A gliding apparatus includes a gliding board, a first front boot-retaining device for ascending a slope and a second front boot-retaining device for the descent. The first front retaining device comprises a first boot-fastening mechanism, defining a boot pivot axis during the ascent. The second front retaining device comprises a second boot-fastening mechanism, including a movable element incorporating an interface surface capable of contacting a front portion of the boot, the movable element being separate from the first fastening mechanism. The second front retaining device is configurable in a first “inactive” configuration for which the interface surface is away from the boot front portion, and a second “active” configuration for which the interface surface contacts the boot front portion. The first boot-fastening mechanism is capable of cooperating with the movable element of the second front retaining device so as to maintain the second front retaining device in its active configuration.

Interior panels having integrated airbag doors for motor vehicles and methods for making such interior panels are provided herein. In one example, an interior panel comprises a substrate having outer and inner surfaces and an opening extending therethrough. A multi-shot injection molded airbag chute-door assembly is mounted to the substrate and comprises a chute wall that at least partially surrounds an interior space. A door flap portion is pivotally connected to the chute wall and at least partially covers the opening. A perimeter flange extends from the chute wall and has a flange section that overlies the outer surface of the substrate. A molded-in lip feature extends from the flange section and contacts the outer surface to form a seal between the flange section and the substrate. A skin covering extends over the substrate and a foam is disposed between the skin covering and the substrate.

In an inflated and expanded state of a side airbag, a forwardly extending portion, provided at an upper portion of a rear side bag portion, extends from a side of a shoulder portion of a seated passenger toward a vehicle front side and is disposed above a front side bag portion. A dimension in a vehicle transverse direction of this forwardly extending portion is set to be smaller than that of the front side bag portion, and a vehicle transverse direction inner side surface at an upper end side of the front side bag portion is inclined or curved so as to rise-up while heading toward a vehicle transverse direction outer side. An upper arm portion is pushed-up due to sliding contact with this surface. Even when the seated passenger inertially toward an oblique front of a vehicle, the shoulder portion can be restrained by the forwardly extending portion.

Airbag inflator system includes an inflatable airbag, e.g., a side curtain airbag, a housing, a gas generating system arranged apart from the housing for generating gas, and a conduit leading from the gas generating system to the housing to provide gas to the housing, e.g., to a lateral end of the housing. A filter may be arranged between the gas generating system and the housing, possibly in the conduit. A nozzle may be arranged between the gas generating system and an interior of the airbag, which nozzle is varied as a function of temperature. The housing may be movably arranged relative to a fixed base and mounted to vary its relation to the base as a function of temperature, e.g., via elastic or deformable supports which support the housing on the base.

There is provided a behavior control device for the prevention of a jackknife phenomenon of a combination vehicle including a tractor and a trailer pivotably coupled with the tractor, taking into account that the relative pivoting action of the trailer and tractor varies according to the magnitudes of a vehicle speed or a deceleration. The inventive behavior control device comprises a braking-driving force control portion which controls a braking-driving force of the tractor or the trailer to reduce a difference between a yaw rate of the tractor and a yaw rate of the trailer and a judgment portion which judges whether or not a braking-driving force control of the tractor or the trailer by the braking-driving force control portion is necessary; wherein the judgment portion changes based on a vehicle speed or a deceleration of the vehicle the judgment of whether or not the braking-driving force control is necessary.

A luggage case may include opposing sidewalls forming minor faces, opposing sidewalls forming major faces, and opposing end walls together forming an article defining an enclosed space. A line of separation may be formed in said minor faces and end walls. A first portion of the line of separation may extend along a first portion of opposing minor faces at a location proximate one of said opposing major faces and corresponding one of said opposing end walls positioned therebetween. A second portion of the line of separation may extend along a second portion of said opposing minor faces in a direction away from said one of said opposing major faces and towards other of said opposing major faces.

A luggage case (100, 600, 700, 800, 900) may include opposing sidewalls forming minor faces (105, 106), opposing sidewalls forming major faces (101, 102), and opposing end walls (103, 104) together forming an article defining an enclosed space (109). A line of separation (150) may be formed in said minor faces (105, 160) and end walls (103, 104). A first portion of the line of separation (150) may extend along a first portion of opposing minor faces (105, 106) at a location proximate one of said opposing major faces (101, 102) and corresponding one of said opposing end walls (103, 104) positioned therebetween. A second portion of the line of separation (150) may extend along a second portion of said opposing minor faces (105, 106) in a direction away from said one of said opposing major faces (101, 102) and towards other of said opposing major faces (101, 102).

A deployment guiding cloth is wound from an outside in the vehicle width direction, on an outer peripheral portion of a folded side airbag. This deployment guiding cloth extends toward a vehicle front side and is interposed between the side airbag that is partially deployed and a vehicle cabin side portion (a center pillar garnish and a door trim) before the side airbag is fully deployed.

A pre-weakened cover of an airbag module is provided including a layer having an outer show surface and an opposing inner surface. A plurality of first cuts is arranged at a first angle on the inner surface. A plurality of second cuts is arranged at a second angle on the inner surface. Each of the second cuts intersects two adjacent first cuts to form a generally V-shaped pattern.

A pre-weakened cover of an airbag module is provided including a layer having an outer show surface and an opposing inner surface. A plurality of first cuts is arranged at a first angle on the inner surface. A plurality of second cuts is arranged at a second angle on the inner surface. Each of the second cuts intersects two adjacent first cuts to form a generally V-shaped pattern.

A driver seat airbag system includes: an airbag that is housed in a pad section of a steering wheel, receives a supply of gas for inflation during a collision of a vehicle, and is inflated and deployed between the steering wheel and an occupant in a driver seat; and an inflator that generates the gas. The airbag includes an auxiliary inflated section that is inflated to a front of the vehicle in conjunction with inflation and deployment of the airbag, so as to enter a space between a rim and a spoke of the steering wheel.

A tool comprising a tool body having an opening defined by interior walls extending into the tool body and a casing disposed within the opening. The tool further includes a scintillator material disposed within the casing and a first compressive member disposed within the tool body at a first axial location. The first axial location extends for a fraction of a total axial length of the casing and exerts a first radially compressive force at the first axial location.

Methods and systems are described for improved drilling operations through the use of real-time drilling data to predict bit wear, lithology, pore pressure, a rotating friction coefficient, permeability, and cost in real-time and to adjust drilling parameters in real-time based on the predictions. The real-time lithology prediction is made by processing the real-time drilling data through a multilayer neural network. The real-time bit wear prediction is made by using the real-time drilling data to predict a bit efficiency factor and to detect changes in the bit efficiency factor over time. These predictions may be used to adjust drilling parameters in the drilling operation in real-time, subject to override by the operator. The methods and systems may also include determining various downhole hydraulics parameters and a rotary friction factor. Historical data may be used in combination with real-time data to provide expert system assistance and to identify safety concerns.

A drill bit assembly for measuring reservoir formation properties comprises a bit head and a pin body, and an electrically insulated gap joint between two conductive parts of the drill bit assembly. The bit head has a cutting end and an opposite connecting end with an engagement section. The pin body comprises a connecting end with an engagement section. The pin connecting end is connected to the bit head connecting end such that the engagement sections overlap. The electrically insulating gap joint can fill a gap between the bit head and pin body engagement sections such that the bit head and pin body are mechanically connected together at the connecting ends but electrically separated. Alternatively or additionally, the pin body can have two pieces which are separated by an electrically insulating gap joint. An electrical conductor is electrically connected at a first end to the bit head and is communicable at a second end with an alternating current signal to transmit an alternating current into the bit head, thereby inducing an electric current into a reservoir formation adjacent the bit head. Electronic equipment includes measurement circuitry configured to determine the alternating current at the bit head, the alternating current being inversely proportional to a bit resistivity of the formation.

In some example embodiments, a system includes a drill string having a drill bit. The drill string extends through at least part of a well bore. The system also includes a first vibrational sensor, positioned on the drill bit to measure, at a first location on the drill string, an amplitude of one or more of an axial vibration and a lateral vibration. The system also includes a second vibrational sensor, positioned above the drill bit and on the drill string. The second vibration sensor is to measure, at a second location on the drill string, one or more of an axial vibration and a lateral vibration. The system includes a processor unit to determine a type of vibration based on a comparison of the amplitude at the first location to the amplitude at the second location, wherein the type of vibration is at least one of bit whirl of the drill bit and a while of a bottom hole assembly that is part of the drill string.

In one aspect, an apparatus for drilling a wellbore into an earth formation is disclosed, which apparatus, according to one embodiment, may include a drill string configured to be conveyed into a wellbore, wherein an annulus is formed between the drill string and a wellbore wall, a first flow device configured to circulate a first fluid from an annulus to a bore of the drill string, and a second flow device positioned downhole of the first flow device, the second flow device configured to circulate a second fluid from the bore of the drill string to the annulus.

An arrangement having a piston configured to move along an axial pathway a rotating seal configured to seal an inside environment from an outside environment, the rotating seal configured to be acted upon by a pressure exerted from the piston, a differential pressure sensor measuring a pressure difference between a first fluid from the outside environment and a second fluid on the inside environment, a motor connected to the piston, the motor configured to actuate the piston to a position along an axial pathway and an electronic feedback control system connected to the motor, the electronic feedback system configured to interface with the differential pressure sensor and maintain a pressure generated by the piston onto the rotating seal to a desired pressure.

This invention provides a structure for gunpowder charge for charging gunpowders of different rates in combined fracturing perforation devices. The structure for gunpowder charge is convenient to mount and transport. In one embodiment, said structure for gunpowder charge comprises an inner gunpowder box located between adjacent perforating charges in the charge frame of a perforation device, and an outer gunpowder box attached to the outer wall of the charge frame, wherein said outer gunpowder box comprises one or two box units (2 or 4) with at least one claw at the inner side of said box unit, said claw can be locked into a groove or installation hole of the charge frame, and wherein said inner gunpowder box and said outer gunpowder box are charged with gunpowders of different burning rates.

A control and monitoring system controls and monitors a high power laser system for performing high power laser operations. The control and monitoring system is configured to perform high power laser operation on, and in, remote and difficult to access locations.

Methods and apparatus are described to drill and complete wellbores. Such wellbores include extended reach horizontal wellbores, for example in shales, deep subsea extended reach wellbores, and multilateral wellbores. Specifically, the invention provides simple threaded subassemblies that are added to existing threaded tubular drilling and completion equipment which are used to dramatically increase the lateral reach using that existing on-site equipment. These subassemblies extract power from downward flowing clean mud, or other fluids, in an annulus to provide additional force or torque on tubular elements within the wellbore, while maintaining circulation, to extend the lateral reach of the drilling equipment and completion equipment. These added elements include combinations of The Leaky Seal™, a Cross-Over, The Force Sub™ and The Torque Sub™. The use of such additional simple elements allow lighter drilling equipment to be used to reach a given lateral distance, therefore reducing drilling costs.

A vibrational tool and method is disclosed, which may be utilized to assist in lowering a drill string into a wellbore. In one embodiment, a reciprocating member and a symmetrical rotating member are mounted within a vibrational tool housing. The reciprocating member is urged in one embodiment by a spring assembly toward the rotating member whereby engagement surfaces on the reciprocating member and rotating member encounter each other. As the rotating member rotates, variable surfaces on the engagement surface cause the reciprocating member to reciprocate as the variable surfaces follow or cam with respect to each other during rotation. The resistance to rotation by engagement surfaces and spring assembly, and mass of the rotating member, result in vibrational forces, when drilling fluid flows through the vibration tool housing.

A spacer fluid comprises a fluid and a viscosity agent. The viscosity agent is a mixture of at least two polyvinylalcohol compositions. A first polyvinylalcohol composition comprises polyvinylalcohols having a first degree of hydrolysis and a second polyvinylalcohol composition comprises polyvinylalcohols having a second degree of hydrolysis. The first and second degrees of hydrolysis are substantially different such that the rheology of the spacer fluid is stable during temperatures changes.