A harvester having one or more cutting blades for cutting leafy vegetables with a rotating brush for sweeping harvested leaves into a basket or enclosure. The blades are driven by an oscillatory drive mechanism. The brush may have limp bristles. The harvester may be hand-carried and operated by a motor, which drives both the brush and the cutting blades.

A deck lifting and height of cut assembly for a lawn mower, in which the deck lifting assembly includes at least one movable component and the height of cut assembly includes a height adjustment mechanism having a plurality of stop surfaces. A prop extends between the movable component of the deck lifting assembly and a first stop surface of the height adjustment mechanism to prevent the cutting deck assembly from lowering below a first height. The height adjustment mechanism is adjustable to place a second stop surface in engagement with the prop so that the cutting deck assembly is prevented from lowering below a second height different from the first height. The prop may also be used to maintain the cutting deck assembly in the full-up position during travel of the lawn mower between work areas.

A reel lawn mower which has a connection structure for connecting a reel cutting unit to a main body. The reel cutting unit has a spiral cutting reel which is rotated by a prime mover to cut grass together with a bedknife. In the connection structure, in order to connect the reel cutting unit to the main body so that the reel cutting unit rolls around a virtual horizontal line perpendicular to the shaft center of the cutting reel in the center of the axial direction of the cutting reel, the reel cutting unit includes a connecting arm with an arc portion shaped so as to follow a virtual arc centered on the virtual horizontal line. The connecting arm is slidably supported so as to prevent the arc portion from coming off the virtual arc.

A corn header has a row unit frame and an auger sweeping ears of corn toward a center of the corn header. A corn row divider assembly has a snout and gatherer hood hingeably coupled to, and aft of, the snout. An aft end of the gatherer hood is located beneath and to the rear of the fore end of the auger in an operational configuration of the divider assembly. The divider assembly further has a four-point hinge assembly coupling the aft end of the gatherer hood to the row unit frame. The four-point hinge assembly is configured to pivot the gatherer hood between the operational configuration and a non-operational configuration in which the gatherer hood is in a raised condition. The four-point hinge assembly moves the aft end of the gatherer hood forward so that the gatherer hood clears the auger when pivoting to the non-operational configuration.

A grass collection system may have an impeller with a through-shaft that mechanically couples power take off (PTO) energy to the mower deck. The PTO shaft may pass through the impeller and blower housing to power the mower deck, resulting in a compact mechanism. The PTO shaft may pass through a grass tunnel that connects between the blower housing and the mower deck, then may be connected to the mower deck to power the mower blades. The grass collection system may be deployed on a front mounted deck tractor that has front wheel drive. The front wheels may each have a hydrostatic pump and gearbox, and the PTO shaft may pass between or under the front wheel drive systems in connecting to the mower deck.

A rotary implement includes a metallic body that is rotatable around an axis. The metallic body includes a tapered leading edge having an interface surface and an opposite, free surface. The metallic body has a first composition. A metallic layer has a first side surface that is attached to the interface surface and a free, second side surface opposite from the first side surface. The metallic layer has a second, different composition from the first composition. A rotary machine can include an actuator and the rotary implement operably coupled to the actuator. A method for making a rotary implement includes providing the metallic body that has the tapered leading edge having the interface surface and the opposite, free surface. The metallic layer is then attached to the interface surface of the metallic body.

A semiconductor device has a plurality of semiconductor die. A first prefabricated insulating film is disposed over the semiconductor die. A conductive layer is formed over the first prefabricated insulating film. An interconnect structure is formed over the semiconductor die and first prefabricated insulating film. The first prefabricated insulating film is laminated over the semiconductor die. The first prefabricated insulating film includes glass cloth, glass fiber, or glass fillers. The semiconductor die is embedded within the first prefabricated insulating film with the first prefabricated insulating film covering first and side surfaces of the semiconductor die. The interconnect structure is formed over a second surface of the semiconductor die opposite the first surface. A portion of the first prefabricated insulating film is removed after disposing the first prefabricated insulating film over the semiconductor die. A second prefabricated insulating film is disposed over the first prefabricated insulating film.

Presented herein are an interconnect structure and method for forming the same. The interconnect structure includes a contact pad disposed over a substrate and a connector disposed over the substrate and spaced apart from the contact pad. A passivation layer is disposed over the contact pad and over connector, the passivation layer having a contact pad opening, a connector opening, and a mounting pad opening. A post passivation layer including a trace and a mounting pad is disposed over the passivation layer. The trace may be disposed in the contact pad opening and contacting the mounting pad, and further disposed in the connector opening and contacting the connector. The mounting pad may be disposed in the mounting pad opening and contacting the opening. The mounting pad may be separated from the trace by a trace gap, which may optionally be at least 10 μm.

A system for determining thickness variation values of a semiconductor substrate comprises a substrate vacuumed to a pedestal that defines a reference plane for measuring the substrate. A measurement probe assembly determines substrate CTV and BTV values, and defines a substrate slope angle. A thermal bonding assembly attaches a die to the substrate at a bonding angle congruent with the substrate slope angle. A plurality of substrates are measured using the same reference plane on the pedestal. Associated methods and processes are disclosed.

A bump-on-trace (BOT) interconnection in a package and methods of making the BOT interconnection are provided. An embodiment BOT interconnection comprises a landing trace including a distal end, a conductive pillar extending at least to the distal end of the landing trace; and a solder feature electrically coupling the landing trace and the conductive pillar. In an embodiment, the conductive pillar overhangs the end surface of the landing trace. In another embodiment, the landing trace includes one or more recesses for trapping the solder feature after reflow. Therefore, a wetting area available to the solder feature is increased while permitting the bump pitch of the package to remain small.

A method of ultrasonically bonding semiconductor elements includes the steps of: (a) aligning surfaces of a plurality of first conductive structures of a first semiconductor element to respective surfaces of a plurality of second conductive structures of a second semiconductor element; (b) ultrasonically forming tack bonds between ones of the first conductive structures and respective ones of the second conductive structures; and (c) forming completed bonds between the first conductive structures and the second conductive structures.

Package structures and methods are provided to integrate optoelectronic and CMOS devices using SOI semiconductor substrates for photonics applications. For example, a package structure includes an integrated circuit (IC) chip, and an optoelectronics device and interposer mounted to the IC chip. The IC chip includes a SOI substrate having a buried oxide layer, an active silicon layer disposed adjacent to the buried oxide layer, and a BEOL structure formed over the active silicon layer. An optical waveguide structure is patterned from the active silicon layer of the IC chip. The optoelectronics device is mounted on the buried oxide layer in alignment with a portion of the optical waveguide structure to enable direct or adiabatic coupling between the optoelectronics device and the optical waveguide structure. The interposer is bonded to the BEOL structure, and includes at least one substrate having conductive vias and wiring to provide electrical connections to the BEOL structure.

A semiconductor device includes a substrate comprising a trench; a gate dielectric layer formed over a surface of the trench; a gate electrode positioned at a level lower than a top surface of the substrate, and comprising a lower buried portion embedded in a lower portion of the trench over the gate dielectric layer and an upper buried portion positioned over the lower buried portion; and a dielectric work function adjusting liner positioned between the lower buried portion and the gate dielectric layer; and a dipole formed between the dielectric work function adjusting liner and the gate dielectric layer.

A method for forming a V-NAND device is disclosed. Specifically, the method involves deposition of at least one of semiconductive material, conductive material, or dielectric material to form a channel for the V-NAND device. In addition, the method may involve a pretreatment step where ALD, CVD, or other cyclical deposition processes may be used to improve adhesion of the material in the channel.

A method of forming a ferroelectric memory cell. The method comprises forming an electrode material exhibiting a desired dominant crystallographic orientation. A hafnium-based material is formed over the electrode material and the hafnium-based material is crystallized to induce formation of a ferroelectric material having a desired crystallographic orientation. Additional methods are also described, as are semiconductor device structures including the ferroelectric material.

The present invention provides a method for manufacturing the N-type TFT, which includes subjecting a light shielding layer to a grating like patternization treatment for controlling different zones of a poly-silicon layer to induce difference of crystallization so as to have different zones of the poly-silicon layer forming crystalline grains having different sizes, whereby through just one operation of ion doping, different zones of the poly-silicon layer have differences in electrical resistivity due to difference of grain size generated under the condition of identical doping concentration to provide an effect equivalent to an LDD structure for providing the TFT with a relatively low leakage current and improved reliability. Further, since only one operation of ion injection is involved, the manufacturing time and manufacturing cost can be saved, damages of the poly-silicon layer can be reduced, the activation time can be shortened, thereby facilitating the manufacture of flexible display devices.

A method of manufacturing a thin film transistor is disclosed. The method of manufacturing the thin film transistor includes: manufacturing a substrate; forming an oxide semiconductor layer on the substrate; forming a pattern including an active layer through a patterning process; forming a source and drain metal layer on the active layer; and forming a pattern including a source electrode and a drain electrode through a patterning process, an opening being formed between the source electrode and the drain electrode at a position corresponding to a region of the active layer used as a channel, wherein the step of forming the pattern including the source electrode and the drain electrode through a patterning process includes: removing a portion of the source and drain metal layer corresponding to the position of the opening through dry etching. The method may also be used to manufacturing a thin film transistor.

A first photoresist pattern and a second photoresist pattern are formed over a substrate. The first photoresist pattern is separated from the second photoresist pattern by a gap. A chemical mixture is coated on the first and second photoresist patterns. The chemical mixture contains a chemical material and surfactant particles mixed into the chemical material. The chemical mixture fills the gap. A baking process is performed on the first and second photoresist patterns, the baking process causing the gap to shrink. At least some surfactant particles are disposed at sidewall boundaries of the gap. A developing process is performed on the first and second photoresist patterns. The developing process removes the chemical mixture in the gap and over the photoresist patterns. The surfactant particles disposed at sidewall boundaries of the gap reduce a capillary effect during the developing process.

A TFT and manufacturing method thereof, an array substrate and manufacturing method thereof, an X-ray detector and a display device are disclosed. The manufacturing method includes: forming a gate-insulating-layer thin film (3'), a semiconductor-layer thin film (4') and a passivation-shielding-layer thin film (5') successively; forming a pattern (5') that includes a passivation shielding layer through one patterning process, so that a portion, sheltered by the passivation shielding layer, of the semiconductor-layer thin film forms a pattern of an active layer (4a'); and performing an ion doping process to a portion, not sheltered by the passivation shielding layer, of the semiconductor-layer thin film to form a pattern comprising a source electrode (4c') and a drain electrode (4b'). The source electrode (4c') and the drain electrode (4b') are disposed on two sides of the active layer (4a') respectively and in a same layer as the active layer (4a'). The manufacturing method can reduce the number of patterning processes and improve the performance of the thin film transistor in the array substrate.

Manufacturing methods of JFET-type compact three-dimensional memory (3D-MC) are disclosed. In a memory level stacked above the substrate, an x-line extends from a memory array to an above-substrate decoding stage. A JFET-type transistor is formed on the x-line as a decoding device for the above-substrate decoding stage, where the overlap portion of the x-line with the control-line (c-line) is semi-conductive.

A semiconductor device is provided that includes an n-type field effect transistor including a plurality of vertically stacked silicon-containing nanowires located in one region of a semiconductor substrate, and a p-type field effect transistor including a plurality of vertically stacked silicon germanium alloy nanowires located in another region of a semiconductor substrate. Each vertically stacked silicon-containing nanowire of the n-type field effect transistor has a different shape than the shape of each vertically stacked silicon germanium alloy nanowire of the p-type field effect transistor.

A method for forming a semiconductor structure includes forming a strained silicon germanium layer on top of a substrate. At least one patterned hard mask layer is formed on and in contact with at least a first portion of the strained silicon germanium layer. At least a first exposed portion and a second exposed portion of the strained silicon germanium layer are oxidized. The oxidizing process forms a first oxide region and a second oxide region within the first and second exposed portions, respectively, of the strained silicon germanium.

Hall effect devices and field effect transistors are formed incorporating a carbon-based nanostructure layer such as carbon nanotubes and/or graphene with a sacrificial metal layer formed there over to protect the carbon-based nanostructure layer during processing.

A method is provided for making smooth crystalline semiconductor thin-films and hole and electron transport films for solar cells and other electronic devices. Such semiconductor films have an average roughness of 3.4 nm thus allowing for effective deposition of additional semiconductor film layers such as perovskites for tandem solar cell structures which require extremely smooth surfaces for high quality device fabrication.

Provided are superconducting circuits and, more specifically, methods of forming such circuits. A method may involve forming a silicon-containing low loss dielectric (LLD) layer over a metal electrode such that metal carbides at the interface of the LLD layer and electrode. The LLD layer may be formed using chemical vapor deposition (CVD) at a temperature of less than about 500° C. At such a low temperature, metal silicides may not form even though silicon containing precursors may come in contact with metal of the electrode. Silicon containing precursors having silane molecules in which two silicon atoms bonded to each other (e.g., di-silane and tri-silane) may be used at these low temperatures. The LLD layer may include amorphous silicon, silicon oxide, or silicon nitride, and this layer may directly interface one or more metal electrodes. The thickness of LLD layer may be between about 1,000 Angstroms and 10,000 Angstroms.

A magnetoresistive random access memory (MRAM) structure includes a bottom electrode structure. A magnetic tunnel junction (MTJ) element is over the bottom electrode structure. The MTJ element includes an anti-ferromagnetic material layer. A ferromagnetic pinned layer is over the anti-ferromagnetic material layer. A tunneling layer is over the ferromagnetic pinned layer. A ferromagnetic free layer is over the tunneling layer. The ferromagnetic free layer has a first portion and a demagnetized second portion. The MRAM also includes a top electrode structure over the first portion.

An organic layer deposition assembly for depositing a deposition material on a substrate includes a deposition source configured to spray the deposition material, a deposition source nozzle arranged in one side of the deposition source and including deposition source nozzles arranged in a first direction, a patterning slit sheet arranged to face the deposition source nozzle and having patterning slits in a second direction that crosses the first direction, and a correction sheet arranged between the deposition source nozzle and the patterning slit sheet and configured to block at least a part of the deposition material sprayed from the deposition source.

The invention relates to encapsulation structures for OLED displays, wherein the structure provides sufficient barrier properties against oxygen and moisture as well as anti-reflection properties. The structure includes a layer comprising a photo-aligned substance which in a synergistic manner controls both barrier and anti-reflection properties.

An array substrate of organic light-emitting diodes and a method for fabricating the same are provided to narrow an edge frame of product device of organic light-emitting diodes, to shorten the package process time, and to improve the substrate utilization and the production efficiency. The array substrate of organic light-emitting diodes includes a plurality of display panels disposed in an array of rows and columns, wherein at least two adjacent display panels are connected through a frame adhesive, and there is no cutting headroom between at least one side of the at least two adjacent display panels.

A tensioning device comprises an elongate member, preferably a band, and a frame having first and second sides. The band has a first end that is attachable to the first side of the frame and a second end that is releasably securable to the second side of the frame. A movable clamping member on the frame secures the second end of the band to the second side of the frame by cinching the second end of the band between an engagement surface on the band and a mating engagement surface on the second side of the frame. A restraining member is provided for restraining the clamping member to a first position spaced from the mating locking surface on the second side of the frame, when the restraining member is in a restraining orientation. The restraining member is movable out of the restraining orientation after the band is tensioned to a predetermined level using the second end. The band is tensioned to the aforementioned predetermined level and is secured to the second side of the frame, so that the band establishes a path of tension along its length that extends linearly between the two ends of the band.

An apparatus and method for carrying and storing a portion of rope is claimed. A portion of rope is braided and wound about two complementary loops. Attached to one complementary loop is a flexible fastener. The flexible fastener can be passed through the second complementary loop and attached to itself. The apparatus can then be worn as a bracelet. When the rope is needed, the person can unwind the rope. After using the rope, the rope can be rewound and then bound with the flexible fastener.

Flash grip system is used to securely retain a USB flash drive or thumb drive and provide a comfortable, gripping surface. Further, the flash grip system may use an article-fastener such that the USB flash drive may be removably attached to a variety of articles (such as a keychain, a belt loop, a bag strap, etc). The holding surface may further include decorative indicia for decorating the USB flash drive.

Substrates such as sheet metal components may be kept spaced apart from each other using a molded polymeric spacing device. The spacing device has a main body with a thickness corresponding to the desired minimum spacing between the substrates and, extending from the main body or a base connected to said main body, an attachment member capable of being inserted into an opening in one of the substrates, but resistant to being easily withdrawn from such opening. Noise and vibration that might otherwise be generated or propagated by closely proximate substrates are reduced through the use of such molded polymeric spacing devices, which may be integrally fashioned from a rubber.

Flexible retaining structures for body jewelry and method for their use.

The present invention provides an improvement in an article of jewelry of the type in which the ornamental portion of the article is secured or released selectively from the support portion of the article. The removable jewelry setting provides a simplified construction which is used readily by the wearer of jewelry to assemble a particular combination of ornament and support selected from a wide variety of such combinations made available by the improvement. The construction also enhances the ability to tailor a jewelry article to a particular style of dress without unduly multiplying the number of expensive ornaments required to provide a wide range of ornamented articles. The construction enables ease of interchange of the ornamental portion of an article of jewelry.

Self adjusting and/or locking buckle tongue assemblies for use with occupant restraint systems in vehicles are described herein. In one embodiment, a buckle tongue assembly includes a plate having a tongue portion configured to cooperatively engage a corresponding buckle assembly. The buckle tongue assembly of this embodiment can further include first and second web gripping portions carried by the plate. The second web gripping portion is configured to move relative to the first web gripping portion between a first position in which the web gripping portions are spaced apart to permit movement of a web therebetween, and a second position in which the web gripping portions are engaged or interlocked to clamp the web therebetween.

First and second plates have a space between them. Each plate has parallel top and bottom edges, parallel inner and outer edges, and interior and exterior surfaces. First and second fingering assemblies include fingers fabricated of a flexible material. Each finger includes a terminal projection extending into the space between the support plates. The fingers may move into and out of the space between the support plates. First and second tubes are provided. Each tube is coupled to the inner edge of an associated plate. Each tube has circumferential recesses with C-shaped clips positioned within the circumferential recesses. In this manner the tubes are secured together. Also in this manner rotation of the tubes and support plates is allowed.

A copper-zinc alloy product of the invention contains zinc in an amount of higher than 35% by weight and 43% by weight or less and has a two-phase structure of an α-phase and a β-phase. Further, the ratio of the β-phase in the copper-zinc alloy is controlled to be higher than 10% and less than 40% and the crystal grains of the α-phase and the β-phase are crushed into a flat shape and arranged in a layer shape through cold working. According to the copper-zinc alloy product, it is possible to decrease the copper content and to appropriately secure the strength and cold workability by appropriately controlling the ratio of the β-phase.

A wire gripping assembly for securing an electrical box or light fixture to a support. The wire gripping assembly includes a wire gripping device having a body with open channels and a through bore, a clip member having legs for sliding engagement within the channels, a cable having an end connector thereon, and a thumbscrew for adjusting the clip member with respect to the body. The thumbscrew includes a head having an outer circumference with serrations to enable hand tightening and an end with a slot for engagement by a screwdriver or similar tool. The wire gripping assembly eases installation of an electrical device to an overhead support by enabling a two-step connection including initial hand tightening using the serrated outer surface of the thumbscrew and subsequent secure tightening by engaging the slot of the thumbscrew with a screwdriver or similar tool.

A respiratory mask assembly for delivering breathable gas to a patient includes a frame and at least one locking clip. The frame has a main body and a side frame member provided on each lateral side of the main body, at least one of the side frame members including a locking clip receiver assembly. The at least one locking clip has a main body providing a front portion adapted to be removably coupled with the at least one locking clip receiver assembly and a rear portion adapted to be removably coupled to a headgear assembly. The rear portion includes a cross bar that forms an opening through which a strap of the headgear assembly can pass and be removably coupled with the cross bar, and the front portion includes at least one resiliently flexible spring arm that is flexible within the plane of the main body.

The present disclosure relates to an apparatus for fastening a power semiconductor using an integral springy (elastic) clip, capable of fixing a power semiconductor, such as a diode and a MOSFET, using elasticity of a U-shaped clip by integrally molding the clip onto a housing of a plastic module. The apparatus includes an elastic (springy) clip integrally molded onto a lower surface of the housing and downwardly curved into a U-like shape in a bridge module in which a bridge of the power semiconductor protrudes through a through hole of the housing to be connected to a printed circuit board, whereby the power semiconductor is fixed by a force that the housing presses the power semiconductor.

A safety snap hook includes a body defining a hook throat opening, a pivotable gate biased to close the hook throat opening, a pivotable trigger extending through an aperture in the gate and biased to press against a locking surface of the gate, and a pivotable locking member biased to a locking position whereat rotation of the gate relative to the body is prevented. When free ends of the trigger and the locking member are rotated toward the body to remove the trigger from the locking surface and rotate the locking member to a release position, the gate can be rotated relative to the body to open the hook throat opening.

A clamp assembly includes a body member having a cable groove formed therein to receive a cable. A keeper is connected to the body member and has a lower surface adapted to engage the cable received in the cable groove. A biasing member is disposed between the keeper and the body member.

A profiled retaining section for positioning a seam connecting two decorative layers includes an upper region, a center region and a lower region forming at least one anchor. The upper region is designed as a piping, or in the manner of a piping, for protruding over a visible side of the skins to be positioned. The center region includes two sides to be sewn to the decorative layers. The anchor is designed to be introduced in a groove having a lesser width than the anchor itself and to exert a force on the groove in the lateral direction. The upper region, the center region and the anchor are integral with each other and arranged in the vertical direction relative to each other. Also described is a composite part that uses the profiled retaining section.

A casket shell assembly and method provide for covering an economical or plain casket with a reusable decorative shell. The assembly includes a casket and a shell. The shell has a perimeter wall, an open top, and an open bottom. The shell receives the casket through the open top. A lip coupled to the perimeter wall of the shell supports the casket when the casket is inserted into the shell. A lid is coupled to the perimeter wall selectively covering the open top of the shell when the lid is in a closed position. A plurality of straps is positioned in the shell extending between the shell and the casket. Each of the straps has opposite free ends extendable through the open top of the shell for facilitating lifting of the casket from the shell.

A casket system includes a casket container and a movable platform. The casket container has a bottom, and includes a plurality of rollers supported by said bottom. The movable platform is disposed within the casket container. The movable platform including slots extending through the platform and aligned horizontally with the plurality of rollers, the movable platform having a raised position and a lowered position, wherein at least a portion of a first number of the plurality of rollers extend through the slots and stand proud the movable platform in the lowered position, and a portion of fewer than the first number of the plurality of rulers stand proud the movable platform in the raised position.

An improved cemetery experience whereby the cemetery and accompanying facilities may celebrate and demonstrate the passion and hobbies of the deceased individual. The contemplated themed cemetery may be a stand-alone cemetery that celebrates a common passion of a plurality of individuals, yet still maintains the traditional burial and memorialization process. The themed cemetery may take a specific event, or commonly understood and loved location and memorialize that location in the theme of a cemetery where those with that common interest and enjoyment of the commonly understood location may desire to be buried. The cemetery would closely resemble both visually, and physically a replica of the theme being celebrated and may provide space for the deceased while still providing adequate income and revenue in the way of advertising for the operator.

A method is used to prepare a body for burial. The method includes placing the body inside a vessel. The body includes bones and tissue. The method further includes subjecting the body to a flow of steam until the bones are free of tissue. In one implementation, the flow of steam has a temperature of about 212 degrees Fahrenheit and a mass flow rate of at least 1000 pounds per hour. The method may further include removing the bones from the vessel.