A cutter guard for a rotating blade of a lawn mower, particularly for a robotic, self-guided or autonomous lawn mower forms a cutting bowl in which the blade is mounted for rotation about a generally vertical axis. The guard comprises a generally planar guard section surrounded by an arcuate section, transverse edges of which define an opening in the cutter guard, which in operation is pointed to the front of the lawn mower, to allow uncut grass to be accessed by the cutting blades. The arcuate section comprises a plurality of apertures.

A reel mower grass catcher carrier includes a bail having side rods under the left and right sides of a grass catcher, a front link having an inverted U-shape and having connected to the left and right side rods and a central portion extending forwardly in front of the grass catcher, and a hanger extending forwardly over the grass catcher and connected to the central portion of the front link. The grass catcher can be installed or removed from the side of the carrier while the bail, front link and hanger stay connected together.

A reel lawn mower which has a connection structure for connecting a reel cutting unit to a main body. The reel cutting unit has a spiral cutting reel which is rotated by a prime mover to cut grass together with a bedknife. In the connection structure, in order to connect the reel cutting unit to the main body so that the reel cutting unit rolls around a virtual horizontal line perpendicular to the shaft center of the cutting reel in the center of the axial direction of the cutting reel, the reel cutting unit includes a connecting arm with an arc portion shaped so as to follow a virtual arc centered on the virtual horizontal line. The connecting arm is slidably supported so as to prevent the arc portion from coming off the virtual arc.

A corn header has a row unit frame and an auger sweeping ears of corn toward a center of the corn header. A corn row divider assembly has a snout and gatherer hood hingeably coupled to, and aft of, the snout. An aft end of the gatherer hood is located beneath and to the rear of the fore end of the auger in an operational configuration of the divider assembly. The divider assembly further has a four-point hinge assembly coupling the aft end of the gatherer hood to the row unit frame. The four-point hinge assembly is configured to pivot the gatherer hood between the operational configuration and a non-operational configuration in which the gatherer hood is in a raised condition. The four-point hinge assembly moves the aft end of the gatherer hood forward so that the gatherer hood clears the auger when pivoting to the non-operational configuration.

A grass collection system may have an impeller with a through-shaft that mechanically couples power take off (PTO) energy to the mower deck. The PTO shaft may pass through the impeller and blower housing to power the mower deck, resulting in a compact mechanism. The PTO shaft may pass through a grass tunnel that connects between the blower housing and the mower deck, then may be connected to the mower deck to power the mower blades. The grass collection system may be deployed on a front mounted deck tractor that has front wheel drive. The front wheels may each have a hydrostatic pump and gearbox, and the PTO shaft may pass between or under the front wheel drive systems in connecting to the mower deck.

A windguard mechanism comprising a pair of arms attachable to an agricultural machine and a windguard plate extending between the pair of arms and positioned to hold down crop material processed by a pickup mechanism. The windguard plate comprises a first plate fixed between the pair of arms and a second plate positioned movably with respect to the first plate, wherein working surfaces of the first plate and of the second plate form a windguard working surface of an area independent on the position of the second plate.

A rotary implement includes a metallic body that is rotatable around an axis. The metallic body includes a tapered leading edge having an interface surface and an opposite, free surface. The metallic body has a first composition. A metallic layer has a first side surface that is attached to the interface surface and a free, second side surface opposite from the first side surface. The metallic layer has a second, different composition from the first composition. A rotary machine can include an actuator and the rotary implement operably coupled to the actuator. A method for making a rotary implement includes providing the metallic body that has the tapered leading edge having the interface surface and the opposite, free surface. The metallic layer is then attached to the interface surface of the metallic body.

A semiconductor device has a plurality of semiconductor die. A first prefabricated insulating film is disposed over the semiconductor die. A conductive layer is formed over the first prefabricated insulating film. An interconnect structure is formed over the semiconductor die and first prefabricated insulating film. The first prefabricated insulating film is laminated over the semiconductor die. The first prefabricated insulating film includes glass cloth, glass fiber, or glass fillers. The semiconductor die is embedded within the first prefabricated insulating film with the first prefabricated insulating film covering first and side surfaces of the semiconductor die. The interconnect structure is formed over a second surface of the semiconductor die opposite the first surface. A portion of the first prefabricated insulating film is removed after disposing the first prefabricated insulating film over the semiconductor die. A second prefabricated insulating film is disposed over the first prefabricated insulating film.

An example method includes providing a packaging device includes a substrate having an integrated circuit die mounting region. A plurality of microstructures, each including an outer insulating layer over a conductive material, are disposed proximate a side of the integrated circuit die mounting region. An underfill material is disposed between the substrate and the integrated circuit die, the microstructures preventing spread of the underfill. In another example method, a via can be formed in a substrate and the substrate etched to form a bump or pillar from the via. An insulating material can be formed over the bump or pillar. In another example method, a photoresist deposited over a seed layer and patterned to form openings. A conductive material is plated in the openings, forming a plurality of pillars or bumps. The photoresist and exposed seed layer are removed. The conductive material is oxidized to form an insulating material.

A semiconductor device includes a first moisture-resistant ring disposed in a peripheral region surrounding a circuit region on a semiconductor substrate in such a way as to surround the circuit region and a second moisture-resistant ring disposed in the peripheral region in such a way as to surround the first moisture-resistant ring.

A method for wafer-level packaging includes providing a substrate having a conductive metal pad formed on the surface of the substrate; forming a metal core on the top of the conductive metal pad with the metal core protruding from the surface of the substrate; then, forming an under bump metal layer on the top surface and the side surface of the metal core; and finally, forming a bump structure on the top of the under bump metal layer.

A semiconductor mounting apparatus includes a storing unit that stores a liquid or a gas, a contact unit that comes into contact with a semiconductor chip when the storing unit is filled with the liquid or the gas, and a sucking unit that sucks up the semiconductor chip to bring the semiconductor chip into close contact with the contact unit.

A system for determining thickness variation values of a semiconductor substrate comprises a substrate vacuumed to a pedestal that defines a reference plane for measuring the substrate. A measurement probe assembly determines substrate CTV and BTV values, and defines a substrate slope angle. A thermal bonding assembly attaches a die to the substrate at a bonding angle congruent with the substrate slope angle. A plurality of substrates are measured using the same reference plane on the pedestal. Associated methods and processes are disclosed.

A bump-on-trace (BOT) interconnection in a package and methods of making the BOT interconnection are provided. An embodiment BOT interconnection comprises a landing trace including a distal end, a conductive pillar extending at least to the distal end of the landing trace; and a solder feature electrically coupling the landing trace and the conductive pillar. In an embodiment, the conductive pillar overhangs the end surface of the landing trace. In another embodiment, the landing trace includes one or more recesses for trapping the solder feature after reflow. Therefore, a wetting area available to the solder feature is increased while permitting the bump pitch of the package to remain small.

A method of ultrasonically bonding semiconductor elements includes the steps of: (a) aligning surfaces of a plurality of first conductive structures of a first semiconductor element to respective surfaces of a plurality of second conductive structures of a second semiconductor element; (b) ultrasonically forming tack bonds between ones of the first conductive structures and respective ones of the second conductive structures; and (c) forming completed bonds between the first conductive structures and the second conductive structures.

Package structures and methods are provided to integrate optoelectronic and CMOS devices using SOI semiconductor substrates for photonics applications. For example, a package structure includes an integrated circuit (IC) chip, and an optoelectronics device and interposer mounted to the IC chip. The IC chip includes a SOI substrate having a buried oxide layer, an active silicon layer disposed adjacent to the buried oxide layer, and a BEOL structure formed over the active silicon layer. An optical waveguide structure is patterned from the active silicon layer of the IC chip. The optoelectronics device is mounted on the buried oxide layer in alignment with a portion of the optical waveguide structure to enable direct or adiabatic coupling between the optoelectronics device and the optical waveguide structure. The interposer is bonded to the BEOL structure, and includes at least one substrate having conductive vias and wiring to provide electrical connections to the BEOL structure.

A semiconductor device includes a substrate comprising a trench; a gate dielectric layer formed over a surface of the trench; a gate electrode positioned at a level lower than a top surface of the substrate, and comprising a lower buried portion embedded in a lower portion of the trench over the gate dielectric layer and an upper buried portion positioned over the lower buried portion; and a dielectric work function adjusting liner positioned between the lower buried portion and the gate dielectric layer; and a dipole formed between the dielectric work function adjusting liner and the gate dielectric layer.

A method for forming a V-NAND device is disclosed. Specifically, the method involves deposition of at least one of semiconductive material, conductive material, or dielectric material to form a channel for the V-NAND device. In addition, the method may involve a pretreatment step where ALD, CVD, or other cyclical deposition processes may be used to improve adhesion of the material in the channel.

A method of forming a ferroelectric memory cell. The method comprises forming an electrode material exhibiting a desired dominant crystallographic orientation. A hafnium-based material is formed over the electrode material and the hafnium-based material is crystallized to induce formation of a ferroelectric material having a desired crystallographic orientation. Additional methods are also described, as are semiconductor device structures including the ferroelectric material.

A method of manufacturing a thin film transistor is disclosed. The method of manufacturing the thin film transistor includes: manufacturing a substrate; forming an oxide semiconductor layer on the substrate; forming a pattern including an active layer through a patterning process; forming a source and drain metal layer on the active layer; and forming a pattern including a source electrode and a drain electrode through a patterning process, an opening being formed between the source electrode and the drain electrode at a position corresponding to a region of the active layer used as a channel, wherein the step of forming the pattern including the source electrode and the drain electrode through a patterning process includes: removing a portion of the source and drain metal layer corresponding to the position of the opening through dry etching. The method may also be used to manufacturing a thin film transistor.

A first photoresist pattern and a second photoresist pattern are formed over a substrate. The first photoresist pattern is separated from the second photoresist pattern by a gap. A chemical mixture is coated on the first and second photoresist patterns. The chemical mixture contains a chemical material and surfactant particles mixed into the chemical material. The chemical mixture fills the gap. A baking process is performed on the first and second photoresist patterns, the baking process causing the gap to shrink. At least some surfactant particles are disposed at sidewall boundaries of the gap. A developing process is performed on the first and second photoresist patterns. The developing process removes the chemical mixture in the gap and over the photoresist patterns. The surfactant particles disposed at sidewall boundaries of the gap reduce a capillary effect during the developing process.

A TFT and manufacturing method thereof, an array substrate and manufacturing method thereof, an X-ray detector and a display device are disclosed. The manufacturing method includes: forming a gate-insulating-layer thin film (3'), a semiconductor-layer thin film (4') and a passivation-shielding-layer thin film (5') successively; forming a pattern (5') that includes a passivation shielding layer through one patterning process, so that a portion, sheltered by the passivation shielding layer, of the semiconductor-layer thin film forms a pattern of an active layer (4a'); and performing an ion doping process to a portion, not sheltered by the passivation shielding layer, of the semiconductor-layer thin film to form a pattern comprising a source electrode (4c') and a drain electrode (4b'). The source electrode (4c') and the drain electrode (4b') are disposed on two sides of the active layer (4a') respectively and in a same layer as the active layer (4a'). The manufacturing method can reduce the number of patterning processes and improve the performance of the thin film transistor in the array substrate.

Manufacturing methods of JFET-type compact three-dimensional memory (3D-MC) are disclosed. In a memory level stacked above the substrate, an x-line extends from a memory array to an above-substrate decoding stage. A JFET-type transistor is formed on the x-line as a decoding device for the above-substrate decoding stage, where the overlap portion of the x-line with the control-line (c-line) is semi-conductive.

A semiconductor device is provided that includes an n-type field effect transistor including a plurality of vertically stacked silicon-containing nanowires located in one region of a semiconductor substrate, and a p-type field effect transistor including a plurality of vertically stacked silicon germanium alloy nanowires located in another region of a semiconductor substrate. Each vertically stacked silicon-containing nanowire of the n-type field effect transistor has a different shape than the shape of each vertically stacked silicon germanium alloy nanowire of the p-type field effect transistor.

A method for forming a semiconductor structure includes forming a strained silicon germanium layer on top of a substrate. At least one patterned hard mask layer is formed on and in contact with at least a first portion of the strained silicon germanium layer. At least a first exposed portion and a second exposed portion of the strained silicon germanium layer are oxidized. The oxidizing process forms a first oxide region and a second oxide region within the first and second exposed portions, respectively, of the strained silicon germanium.

A method for manufacturing an LDMOS device includes: providing a semiconductor substrate (200), forming a drift region (201) in the semiconductor substrate (200), forming a gate material layer on the semiconductor substrate (200), and forming a negative photoresist layer (204) on the gate material layer; patterning the negative photoresist layer (204), and etching the gate material layer by using the patterned negative photoresist layer (204) as a mask so as to form a gate (203); forming a photoresist layer having an opening on the semiconductor substrate (200) and the patterned negative photoresist layer (204), the opening corresponding to a predetermined position for forming a body region (206); and injecting the body region (206) by using the gate (203) and the negative photoresist layer (204) located above the gate (203) as a self-alignment layer, so as to form a channel region.

In some embodiments, a field effect transistor structure includes a first semiconductor structure and a gate structure. The first semiconductor structure includes a channel region, and a source region and a drain region. The source region and the drain region are formed on opposite ends of the channel region, respectively. The gate structure includes a central region and footing regions. The central region is formed over the first semiconductor structure. The footing regions are formed on opposite sides of the central region and along where the central region is adjacent to the first semiconductor structure.

A method for producing an integrated power transistor circuit includes forming at least one transistor cell in a cell array, each transistor cell having a doped region formed in a semiconductor substrate and adjoining a first surface of the semiconductor substrate on a first side of the semiconductor substrate, depositing a contact layer on the first side, structuring the contact layer to form a contact structure from the contact layer, the contact structure having, in a projection of the cell array orthogonal to the first surface, a first section and, outside the cell array, a second section which connects the first section to an interface structure, and forming an electrode structure on and in direct contact with the first section in the orthogonal projection of the cell array, the electrode structure being absent outside the cell array.

Provided is a method for fabricating an electronic device, the method including: preparing a carrier substrate including an element region and a wiring region; forming a sacrificial layer on the carrier substrate; forming an electronic element on the sacrificial layer of the element region; forming a first elastic layer having a corrugated surface on the first elastic layer of the wiring region; forming a metal wirings electrically connecting the electronic element thereto, on the first elastic layer of the wiring region; forming a second elastic layer covering the metal wirings, on the first elastic layer; forming a high rigidity pattern filling in a recess of the second elastic layer above the electronic element so as to overlap the electronic element, and having a corrugated surface; forming a third elastic layer on the second elastic layer and the high rigidity pattern; and separating the carrier substrate.

Hall effect devices and field effect transistors are formed incorporating a carbon-based nanostructure layer such as carbon nanotubes and/or graphene with a sacrificial metal layer formed there over to protect the carbon-based nanostructure layer during processing.

A method is provided for making smooth crystalline semiconductor thin-films and hole and electron transport films for solar cells and other electronic devices. Such semiconductor films have an average roughness of 3.4 nm thus allowing for effective deposition of additional semiconductor film layers such as perovskites for tandem solar cell structures which require extremely smooth surfaces for high quality device fabrication.

Provided are superconducting circuits and, more specifically, methods of forming such circuits. A method may involve forming a silicon-containing low loss dielectric (LLD) layer over a metal electrode such that metal carbides at the interface of the LLD layer and electrode. The LLD layer may be formed using chemical vapor deposition (CVD) at a temperature of less than about 500° C. At such a low temperature, metal silicides may not form even though silicon containing precursors may come in contact with metal of the electrode. Silicon containing precursors having silane molecules in which two silicon atoms bonded to each other (e.g., di-silane and tri-silane) may be used at these low temperatures. The LLD layer may include amorphous silicon, silicon oxide, or silicon nitride, and this layer may directly interface one or more metal electrodes. The thickness of LLD layer may be between about 1,000 Angstroms and 10,000 Angstroms.

An organic layer deposition assembly for depositing a deposition material on a substrate includes a deposition source configured to spray the deposition material, a deposition source nozzle arranged in one side of the deposition source and including deposition source nozzles arranged in a first direction, a patterning slit sheet arranged to face the deposition source nozzle and having patterning slits in a second direction that crosses the first direction, and a correction sheet arranged between the deposition source nozzle and the patterning slit sheet and configured to block at least a part of the deposition material sprayed from the deposition source.

The invention relates to encapsulation structures for OLED displays, wherein the structure provides sufficient barrier properties against oxygen and moisture as well as anti-reflection properties. The structure includes a layer comprising a photo-aligned substance which in a synergistic manner controls both barrier and anti-reflection properties.

A method of forming microelectronic systems on a flexible substrate includes depositing a plurality of layers on one side of the flexible substrate. Each of the plurality of layers is deposited from one of a plurality of sources. A vertical projection of a perimeter of each one of the plurality of sources does not intersect the flexible substrate. The flexible substrate is in motion during the depositing the plurality of layers via a roll to roll feed and retrieval system.

An array substrate of organic light-emitting diodes and a method for fabricating the same are provided to narrow an edge frame of product device of organic light-emitting diodes, to shorten the package process time, and to improve the substrate utilization and the production efficiency. The array substrate of organic light-emitting diodes includes a plurality of display panels disposed in an array of rows and columns, wherein at least two adjacent display panels are connected through a frame adhesive, and there is no cutting headroom between at least one side of the at least two adjacent display panels.

One embodiment is a wide stripe semiconductor waveguide, which is cleaved at a Talbot length thereof, the wide stripe semiconductor waveguide having facets with mirror coatings. A system provides for selective pumping the wide stripe semiconductor waveguide to create and support a Talbot mode. In embodiments according to the present method and apparatus the gain is patterned so that a single unique pattern actually has the highest gain and hence it is the distribution that oscillates.

A side release buckle includes: a plug; and a socket, the plug including: a base; a pair of legs; and engaging portions, the socket including: a body; an insertion opening; a housing space; engaged portions; and a pair of guide surfaces. The guide surfaces, which are formed on an inner surface of the housing space and extend in an insertion direction of the legs while being opposed to each other, each include: a squeezing portion formed continuously with corresponding one of the engaged portions; and a guiding portion formed between the squeezing portion and the insertion opening. An interval between the guiding portions near the engaged portions is wider than an interval between the squeezing portions near the engaged portions. An inclination angle of each guiding portion to an insertion direction of the plug is smaller than an inclination angle of each of the squeezing portion to the insertion direction.

Foreign objects that have entered inside an insertion body are suppressed from reaching a detector side. In a buckle device, when a tongue plate is attached, an ejector slides downwards inside a buckle body, opening a through hole in a partitioning wall of a lower cover at the upper side. A main body portion of a slider member of a buckle switch is inserted into the through hole, closing off a portion of the through hole that has been opened by the ejector. Hence it is suppressed that foreign objects discharged through an insertion through hole in the buckle body to outside the buckle body pass through the through hole and reach the buckle switch side further than the partitioning wall.

A tensioning device comprises an elongate member, preferably a band, and a frame having first and second sides. The band has a first end that is attachable to the first side of the frame and a second end that is releasably securable to the second side of the frame. A movable clamping member on the frame secures the second end of the band to the second side of the frame by cinching the second end of the band between an engagement surface on the band and a mating engagement surface on the second side of the frame. A restraining member is provided for restraining the clamping member to a first position spaced from the mating locking surface on the second side of the frame, when the restraining member is in a restraining orientation. The restraining member is movable out of the restraining orientation after the band is tensioned to a predetermined level using the second end. The band is tensioned to the aforementioned predetermined level and is secured to the second side of the frame, so that the band establishes a path of tension along its length that extends linearly between the two ends of the band.

An elastic zip tie is integrally molded from foam rubber, and includes a long strip of strap, a head located at a front end of the strap, and a plurality of flexible grips axially spaced on an upper and a lower surface of the strap. At least one holding space is defined by between any two adjacent axially-spaced flexible grips. The head has a thickness defined between two lateral sides thereof and is substantially larger than a longitudinal length of the holding space, i.e., a distance between two adjacent flexible grips. When a tail end of the strap is extended through the head for the latter to rest on the strap in a selected holding space, the flexible grips located immediately before and behind the holding space are elastically pressed against the two opposite lateral sides of the head to thereby firmly hold the latter in the holding space.

Flash grip system is used to securely retain a USB flash drive or thumb drive and provide a comfortable, gripping surface. Further, the flash grip system may use an article-fastener such that the USB flash drive may be removably attached to a variety of articles (such as a keychain, a belt loop, a bag strap, etc). The holding surface may further include decorative indicia for decorating the USB flash drive.

A clip comprising a first wall member and a second wall member is disclosed. A cross-section of the first wall member is defined by a first side wall, a second side wall and a connecting wall that is positioned between the first side wall and the second side wall. A cross-section of the second wall member is defined by a first end and a second end, wherein at least a portion of the first end is connected to a portion of the first side wall of the first wall member and wherein a second end is positioned between the first side wall and the second side wall and spaced away from an inner surface of the connecting wall. The first wall member and the second wall member cooperate to define a channel having a first portion and a second portion.

A mountable cable tie with fine adjustment with an elongated strap having a first strap end and a second strap end, the elongated strap having one or more rows of teeth or cross-bars formed crosswise on the elongated strap, and a plurality of holes positioned linear along the median between the one or more rows of teeth, at least one locking buckle positioned proximate the second strap end, the at least one locking buckle having at least one channel and at least one locking tang or pawl positioned within the locking buckle, wherein increased insertion of the first strap end into the locking head decreases the size of the loop of the elongated strap to secure the bundle.

Substrates such as sheet metal components may be kept spaced apart from each other using a molded polymeric spacing device. The spacing device has a main body with a thickness corresponding to the desired minimum spacing between the substrates and, extending from the main body or a base connected to said main body, an attachment member capable of being inserted into an opening in one of the substrates, but resistant to being easily withdrawn from such opening. Noise and vibration that might otherwise be generated or propagated by closely proximate substrates are reduced through the use of such molded polymeric spacing devices, which may be integrally fashioned from a rubber.

Flexible retaining structures for body jewelry and method for their use.

The present invention provides an improvement in an article of jewelry of the type in which the ornamental portion of the article is secured or released selectively from the support portion of the article. The removable jewelry setting provides a simplified construction which is used readily by the wearer of jewelry to assemble a particular combination of ornament and support selected from a wide variety of such combinations made available by the improvement. The construction also enhances the ability to tailor a jewelry article to a particular style of dress without unduly multiplying the number of expensive ornaments required to provide a wide range of ornamented articles. The construction enables ease of interchange of the ornamental portion of an article of jewelry.

A watch comprising a watch case with opposite arranged connecting parts in form of two parallel branches for the mounting of a watch strap or cord between said branches, where said watch further comprises at least one generally T-shaped strap or cord connector comprising a spring loaded sliding bar suited for engaging in holes provided in a surface of each branch facing each other, said T-shaped strap or cord connector further comprises a cord receiving opening being arranged opposite to the spring loaded sliding bar and being an opening adapted to receive a cord having generally round or polygonal cross section, said cord at a first end and a second end being provided with interacting locking parts.

Self adjusting and/or locking buckle tongue assemblies for use with occupant restraint systems in vehicles are described herein. In one embodiment, a buckle tongue assembly includes a plate having a tongue portion configured to cooperatively engage a corresponding buckle assembly. The buckle tongue assembly of this embodiment can further include first and second web gripping portions carried by the plate. The second web gripping portion is configured to move relative to the first web gripping portion between a first position in which the web gripping portions are spaced apart to permit movement of a web therebetween, and a second position in which the web gripping portions are engaged or interlocked to clamp the web therebetween.

A copper-zinc alloy product of the invention contains zinc in an amount of higher than 35% by weight and 43% by weight or less and has a two-phase structure of an α-phase and a β-phase. Further, the ratio of the β-phase in the copper-zinc alloy is controlled to be higher than 10% and less than 40% and the crystal grains of the α-phase and the β-phase are crushed into a flat shape and arranged in a layer shape through cold working. According to the copper-zinc alloy product, it is possible to decrease the copper content and to appropriately secure the strength and cold workability by appropriately controlling the ratio of the β-phase.