To provide a magnetic element capable of performing skyrmion transfer, a skyrmion memory to which this magnetic element is applied, and a shift register, for example, a magnetic element capable of performing skyrmion transfer is provided, the magnetic element providing a transverse transfer arrangement in which the skyrmion is transferred substantially perpendicular to a current between an upstream electrode and a downstream electrode, and including a plurality of stable positions in which the skyrmion exists more stably than in other regions of a magnet, and a skyrmion sensor that detects a position of the skyrmion.

To provide a magnetic element which can generate a skyrmion, and a skyrmion memory which applies the magnetic element or the like. To provide a magnetic element with a chiral magnet for generating a skyrmion, the chiral magnet is made of a magnetic material having a β-Mn type crystal structure. Also, to provide a magnetic element with a chiral magnet for generating a skyrmion, the chiral magnet is made of a magnetic material having an Au4Al type crystal structure.

A magnetic element capable of generating and erasing a skyrmion, including a magnet shaped as a thin layer and including a structure surrounded by a nonmagnetic material; a current path provided surrounding an end region including an end portion of the magnet, on one surface of the magnet; and a skyrmion sensor that detects the generation and erasing of the skyrmion. With Wm being width of the magnet and hm being height of the magnet, a size of the magnet, with the skyrmion of a diameter λ being generated, is such that 2λ>Wm>λ/2 and 2λ>hm>λ/2. With W being width of the end region in a direction parallel to the end portion of the magnet and h being height of the end region in a direction perpendicular to the end portion of the magnet, the end region is such that λ≧W>λ/4 and 2λ>h>λ/2.

The semiconductor device includes a bit line, a transistor, a retention node, and a capacitor. The transistor has a function of charging or discharging the retention node. The capacitor has a function of retaining a potential of the retention node. A voltage greater than the sum of a writing voltage and a threshold voltage is applied to a gate of the transistor. When the transistor is turned on, a first potential is supplied to the bit line with a reference potential in a floating state. A voltage less than the sum of the writing voltage and the threshold voltage is applied to the gate of the transistor. When the transistor is turned on, a second potential is supplied to the bit line with a reference potential in a floating state. With use of the first and second potentials, the threshold voltage of the transistor is calculated without being influenced by parasitic capacitance and variations in the storage capacitance of the capacitor.

A nonvolatile memory circuit may include: a cell array including a first region comprising a plurality of first cell groups and a second region comprising a plurality of second cell groups, each of the first and second cell groups having one or more nonvolatile memory cells; and a control unit suitable for controlling the cell array to sequentially output repair addresses of the plurality of cells groups included in a region which is not over used among the first and second regions when one of the first and second regions is over used.

An SRAM includes an SRAM array comprising a plurality of SRAM cells arranged in a matrix. Each of the SRAM cells includes six vertical field effect transistors. The SRAM array includes a plurality of groups of conductive regions extending in the column direction. Each of the plurality of groups of conductive regions includes a first to a fourth conductive region arranged in this order in the row direction, and the first to fourth conductive regions are separated by insulating regions from each other. The first, second and third conductive regions are coupled to sources of first conductive type VFETs, and the fourth conductive region is coupled to sources of second conductive type VFETs. The plurality of groups are arranged in the row direction such that the fourth conductive region of one group of conductive regions is adjacent to the first conductive region of adjacent one group of conductive regions.

A compact CMOS anti-fuse memory cell. In one aspect, an apparatus includes an N− well and an anti-fuse cell formed on the N− well. The anti-fuse cell includes a lightly doped drain (LDD) region deposited in the N− well, an oxide layer deposited on the N− well and having an overlapping region that overlaps the LDD region, and a control gate deposited on the oxide layer, wherein a bit of the anti-fuse cell is programmed when a voltage difference between the control gate and the LDD region exceeds a voltage threshold of the oxide layer and forms a leakage path from the control gate to the LDD region, and wherein the leakage path is confined to occur in the overlapping region.

The invention relates to an integrated circuit (1), comprising: a field-effect transistor (2), comprising:first and second conduction electrodes (201, 202);a channel zone (203) arranged between the first and second conduction electrodes;a gate stack (220) arranged vertically in line with the channel zone, and comprising a gate electrode (222);an RRAM-type memory point (31) formed under the channel zone, or formed in the gate stack under the gate electrode.

Provided is a magnetic element capable of generating one skyrmion and erasing the one skyrmion. The magnetic element includes a magnet shaped like a substantially rectangular flat plate, an upstream electrode connected to the magnet in a width Wm direction of the magnet and made of a non-magnetic metal, a downstream electrode connected to the magnet in the width Wm direction to oppose the upstream electrode and made of a non-magnetic metal, and a skyrmion sensor configured to detect the skyrmion. Here, a width Wm of the substantially rectangular magnet is such that 3·λ>Wm≧λ, where λ denotes a diameter of the skyrmion, a length Hm of the substantially rectangular magnet is such that 2·λ>Hm≧λ, and the magnet has a notch structure at the edge between the upstream electrode and the downstream electrode.

A magnetic memory of an embodiment includes: a first to third terminals; a magnetoresistive element including a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer; a second nonmagnetic layer including a first to third portions, the first portion being located between the second and the third portions, the second and third portions being electrically connected to the second and third terminals respectively, the first magnetic layer being disposed between the first portion and the first nonmagnetic layer; and a third nonmagnetic layer including a fourth to sixth portions, the fourth portion being located between the first portion and the first magnetic layer, the fifth portion including a first region extending from the magnetoresistive element to the second terminal, the sixth portion including a second region extending from the magnetoresistive element to the third terminal.

Examples of the present disclosure provide apparatuses and methods for performing shift operations in a memory. An example method comprises performing a shift operation a first element stored in a first group of memory cells coupled to a first access line and a number of sense lines of a memory array and a second element stored in a second group of memory cells coupled to a second access line and the number of sense lines of the memory array. The method can include shifting the first element by a number of bit positions defined by the second element by performing a number of AND operations, OR operations, SHIFT operations, and INVERT operations performed without transferring data via an input/output (I/O) line.

A memory circuit may be provided. The memory circuit may include a memory array. The memory circuit may include an input and output path circuit coupled to a probe pad and a bump pad, and may be configured to input and output a signal between an exterior of the memory circuit and the memory array. The memory circuit may include a scanning circuit configured to generate a sensing signal by sensing a signal outputted through the bump pad while performing scanning of at least one of a reference voltage and a test strobe signal.

A signal shifting circuit may include a bank selection signal generation unit suitable for generating a bank selection signal synchronized with a first clock in response to a bank address and an internal write signal; and a shifting device suitable for generating a shifted bank selection signal by shifting the bank selection signal by a number of times according to latency information and for advancing a phase of the shifted bank selection signal whenever shifting the bank selection signal once or more so that the shifted bank selection signal is synchronized with a second clock having a phase leading a phase of the first clock.

A memory device performs DLL (delay locked loop) calibration in accordance with a DLL calibration mode configured for the memory device. A host controller can configure the calibration mode based on operating conditions for the memory device. The memory device includes an input/output (I/O) interface circuit and a delay locked loop (DLL) circuit coupled to control I/O timing of the I/O interface. A control circuit of the memory device selectively enables and disables DLL calibration in accordance with the DLL calibration mode. When selectively enabled, the DLL calibration is to operate at a time interval identified by the DLL calibration mode, and when selectively disabled, the DLL calibration is to cease or refrain from DLL calibration operations.

A circuit and method for adaptive trimming of the reference signal for sensing data during a read operation of magnetic memory cells to improve read margin for the magnetic memory cells. The circuit has a trim one-time programmable memory array programmed with offset trim data applied to magnetic memory array sense amplifiers. Sense amplifier trimming circuits receive and decode the trim data to determine offset trim signal magnitude to adjust the reference signal to improve the read margin. The method sets the offset trim level to each increment of the offset trim level. Data is written and read to the magnetic memory array, the number of errors in the array is accumulated for each setting of the offset trim level. The error levels are compared and the appropriate trim level is programmed to the trim memory cells such that a read margin of the sense amplifier is improved.

A semiconductor device capable of stably holding data for a long time is provided. A transistor including a back gate is used as a writing transistor of a memory element. In the case where the transistor is an n-channel transistor, a negative potential is supplied to a back gate in holding memory. The supply of the negative potential is stopped while the negative potential is held in the back gate. In the case where an increase in the potential of the back gate is detected, the negative potential is supplied to the back gate.

A dual inline memory module can include a module card having first and second opposed surfaces and a plurality of microelectronic elements each having a surface facing a surface of the module card. The module card can have a plurality of parallel edge contacts, the edge contacts including first and second contacts, the first and second contacts configured to carry command and address information and data signals corresponding to first and second memory channels, respectively, the first memory channel being independent from the second memory channel. Each microelectronic element can have memory storage array function being of type LPDDRx and being configured to sample the command and address information at least twice per clock cycle. The plurality of microelectronic elements can be configured to implement the first and second memory channels. The first and second microelectronic elements can be configured for communication via the first and second contacts, respectively.

Systems, devices and methods are disclosed. In an embodiment of one such method, a method of decoding received command signals, the method comprises decoding the received command signals in combination with a signal provided to a memory address node at a first clock edge of a clock signal to generate a plurality of memory control signals. The received command signals, in combination with the signal provided to the memory address node at the first clock edge of the clock signal, represent a memory command. Furthermore, the signal provided to the memory address node at a second clock edge of the clock signal is not decoded in combination with the received command signals. The memory command may be a reduced power command and/or a no operation command.

An address generation circuit may include: a first latch unit suitable for latching an address obtained by inverting a part of an input address; a second latch unit suitable for latching the partly inverted input address of the first latch unit, and suitable for latching an added/subtracted address after a first refresh operation during a target refresh period; a third latch unit suitable for latching the partly inverted input address of the first latch unit during a period other than the target refresh period; and an addition/subtraction unit suitable for generating the added/subtracted address by adding/subtracting a predetermined value to/from the latched address of the second latch unit.

A semiconductor memory device may include: a plurality of memory mats; and a plurality of sense amplifier arrays arranged alternately with the memory mats, each sense amplifier array being suitable for sensing and amplifying data of memory mats adjacent thereto, wherein during a data sensing operation to a memory mat among the plurality of memory mats, in addition to a sense amplifier for the memory mat and sense amplifiers positioned immediately above and below the sense amplifier for the memory mat, at least one additional sense amplifier closest to the sense amplifier for the memory mat is also activated for providing additional amplification.

Systems, among other embodiments, include topologies (data and/or control/address information) between an integrated circuit buffer device (that may be coupled to a master, such as a memory controller) and a plurality of integrated circuit memory devices. For example, data may be provided between the plurality of integrated circuit memory devices and the integrated circuit buffer device using separate segmented (or point-to-point link) signal paths in response to control/address information provided from the integrated circuit buffer device to the plurality of integrated circuit buffer devices using a single fly-by (or bus) signal path. An integrated circuit buffer device enables configurable effective memory organization of the plurality of integrated circuit memory devices. The memory organization represented by the integrated circuit buffer device to a memory controller may be different than the actual memory organization behind or coupled to the integrated circuit buffer device. The buffer device segments and merges the data transferred between the memory controller that expects a particular memory organization and actual memory organization.

An apparatus includes a first terminal configured to communicate data with an outside of the apparatus, a second terminal configured to receive a first power source potential, a third terminal configured to receive a second power source potential lower than the first power source potential, a fourth terminal configured to be coupled to a calibration resistor, an output buffer including first to third nodes coupled to the first to third terminals respectively, and a replica circuit including fourth and fifth nodes coupled to the second and third terminals respectively, and sixth node coupled to the fourth terminal.

A semiconductor memory device may include: a memory bank comprising a plurality of word lines; a smart command generation unit suitable for generating a smart refresh command, which is enabled at a random cycle, in response to an active command; and a refresh operation control unit suitable for performing a refresh operation to at least one of adjacent word lines of a target word line among the plurality of word lines in response to the smart refresh command.

A refresh controller of a memory device may include a timing controller, a refresh counter and an address generator. The timing controller generates a counter refresh signal in response to receiving a refresh command provided from an external device, and generates a hammer refresh signal that is activated periodically. The refresh counter generates a counter refresh address signal in response to the counter refresh signal, such that the counter refresh address signal represents a row address, the refresh counter being configured sequentially change the counter refresh address signal. The address generator generates a hammer refresh address signal in response to the hammer refresh signal, the hammer refresh address signal representing an address of a row of the memory device that is physically adjacent to a row of the memory device corresponding to a hammer address that is accessed intensively.

A device including a memory cell and write assist circuit is disclosed. The memory cell includes a first inverter and a second inverter cross-coupled with the first inverter. The write assist circuit is coupled to the memory cell. During a write operation of the memory cell, the write assist circuit is configured to adjust a voltage level of an operational voltage provided to the first inverter or the second inverter by a bias voltage difference.

A bit line architecture for dual-port static random-access memory (DP SRAM) is provided. An array of memory cells is arranged in rows and columns, and comprises a first subarray and a second subarray. A first pair of complementary bit lines (CBLs) extends along a column, from a first side of the array, and terminates between the first and second subarrays. A second pair of CBLs extends from the first side of the array, along the column, to a second side of the array. The CBLs of the second pair of CBLs have stepped profiles between the first and second subarrays. A third pair of CBLs and a fourth pair of CBLs extend along the column. The first and third pairs of CBLs electrically couple to memory cells in the first subarray, and the second and fourth pairs of CBLs electrically couple to memory cells in the second subarray.

According to one embodiment, a semiconductor storage apparatus includes a memory cell array and a read circuit. The memory cell array includes a memory cell which is connected to a word line. A threshold voltage of the memory cell corresponds to a data value of multiple bits. The read circuit receives designation of one bit among the multiple bits, applies a first reading voltage and a second reading voltage corresponding to the designated bit to the word line, senses ON or OFF of the memory cell for each reading voltage, and outputs a first sensed value and a second sensed value after performing the sensing for each reading voltage. The first sensed value is a sensing result in a case where the first reading voltage is applied. The second sensed value is a sensing result in a case where the second reading voltage is applied.

An electronic device includes a semiconductor memory that includes: a memory cell coupled between a first line and a second line; a first selection block configured to select the first line; a second selection block configured to select the second line; an alternate current supply block configured to supply, during a read operation, an alternate current corresponding to a resistance state of the memory cell; and a sensing block configured to sense, during the read operation, at least one of a cell current flowing through the memory cell and the alternate current.

Threshold switching devices demonstrating transient current protection through both insulation and repair current mechanisms, including associated systems and methods, are provided and discussed.

A method is provided for a reading memory even if there is a threshold voltage in an overlapped threshold voltage (VTH) region between a first state distribution and a second state distribution. The method includes ramping a bias on a memory cell a first time to determine a first threshold voltage (VTH1) of the memory cell and determining whether the VTH1 is within the overlapped VTH region. Upon determination that the memory cell is within the overlapped VTH region, the method further includes applying a write pulse to the memory cell; ramping a bias on the memory cell a second time to determine a second threshold voltage (VTH2); and determining the state of the memory cell prior to receiving the write pulse based on a comparison between the VTH1 and the VTH2.

A memory device includes a first string and a second string. The first string includes first and second transistors and first cell transistors coupled in series between a source line and a bit line. The second string includes third and fourth transistors and second cell transistors coupled in series between the source line and the bit line. During a read, a gate of the fourth transistor is applied with a voltage to turn off the transistor, and after start of application of voltages to the first cell transistors, the gate of the fourth transistor is applied with a voltage substantially the same as a voltage applied to the source line.

A method of operating a nonvolatile memory device includes: first programming a target transistor of a cell string of the nonvolatile memory device, wherein the target transistor has a first threshold voltage distribution after the first programming, and wherein the cell string includes a plurality of transistors; and second programming the target transistor of the cell string, wherein the first transistor has a second threshold voltage distribution after the second programming, wherein a width of the second threshold voltage distribution is less than a width of the first threshold voltage distribution.

According to one embodiment, a first well of the first conductivity type which is formed in a substrate. a second well of a second conductivity type which is formed in the first well. The plurality of memory cells, the plurality of first bit line select transistors, and the plurality of second bit line select transistors are formed in the second well, and the plurality of first bit line select transistors and the plurality of second bit line select transistors are arranged on a side of the sense amplifier with respect to the plurality of memory cells of the plurality of bit lines.

A strobe signal shaping method for a data storage system includes receiving a strobe signal; boosting a first clock edge portion of the strobe signal when the strobe signal is received after having been idle or paused over a predetermined time period; and returning to an operating mode in which boosting is turned off with respect to a second clock edge portion of the strobe signal.

According to one embodiment, a semiconductor storage device includes a memory cell array having memory cell capable of holding N-bit data; and a sense amplifier comprising a first latch holding information on a threshold distribution, a second latch holding write data, and a third latch holding lower information of the N-bit data, and supplying a first to a fourth voltages to the memory cell to write the data to the memory cell using the first to fourth voltages. The sense amplifier supplies the first to third voltages to the memory cell based on information in the second and the third latches, and based on a result of transfer of the information held by the first latch to the second latch, supplies the fourth voltage or the first voltage to the memory cell.

According to one embodiment, a semiconductor memory device includes: first to third pages; first to third word line; and row decoder. In data writing, data is written into the first page before data is written into the second page. The row decoder is configured to apply first to third verify voltages to the gates of the first to third memory cells in a program verify operation.

A memory system may include a memory device including 0th to N-1th memory blocks, wherein N is a positive integer; and a controller having a first list and a second list, wherein the first list includes 0th to N-1th erase count values respectively for the 0th to N-1th memory blocks, wherein the second list includes 0th to N-1th difference values respectively for the 0th to N-1th memory blocks, wherein each of the 0th to N-1th difference values is a difference between an average value of the 0th to N-1th erase count values and each of the 0th to N-1th erase count values, wherein the controller selects a source block and a target block among the 0th to N-1th memory blocks depending on the 0th to N-th erase count values included in the first list and the 0th to N-1th difference values included in the second list to perform a wear leveling between the source block and the target block.

A array of electrically programmable fuse (eFuse) units includes at least one connecting switch connecting two adjacent eFuse units. Each eFuse unit includes an eFuse, a write switch for passing through a first portion of a write current, a read/write switch for passing through a second portion of the write current or a read current, and a common node. The eFuse, the write switch, the read/write switch, and the at least one connecting switch are connected to each other at the common node. By turning on and off the at least one connecting switch, the current is split among the eFuse units, so that the size of the write switch can be reduced, thus reducing the total area of the array.

Semiconductor memory devices are provided. The semiconductor memory device includes an input/output (I/O) drive controller, a data I/O unit and a data transmitter. The input/output (I/O) drive controller generates drive control signals and an input control signal for driving first and second global I/O lines in a first test mode or a second test mode. The data I/O unit drives the first global I/O line in response to an input data when a write operation is executed in the first test mode and to drive the first and second global I/O lines in response to the drive control signals when the write operation is executed in the second test mode. The data transmitter transfers the data on the first global I/O line onto first and second local I/O lines to store the data on the first global I/O line in a memory cell array portion when the write operation is executed in the first test mode. The data transmitter also transfers the data on the first and second global I/O lines onto the first and second local I/O lines to store the data on the first and second global I/O lines in the memory cell array portion when the write operation is executed in the second test mode. Related methods are also provided.

An integrated circuit may include nonvolatile memory suitable for outputting stored data during the boot-up operation, one or more registers suitable for receiving the data output by the nonvolatile memory and storing the received data when the boot-up operation is performed, and one or more internal circuits suitable for operating using the data stored in the one or more registers. In no-update mode, although the boot-up operation is performed, a data update from the nonvolatile memory to the registers may not be performed.

Provided is a semiconductor device capable of holding data for a long period. The semiconductor device includes first to third transistors, a capacitor, and a circuit. The third transistor includes a first gate and a second gate. A gate of the first transistor is electrically connected to a first terminal of the capacitor. A first terminal of the first transistor is electrically connected to the second gate. A second terminal of the first transistor is electrically connected to the circuit. A gate of second transistor is electrically connected to a first terminal of the second transistor. A first terminal of the second transistor is electrically connected to the second gate. A second terminal of the second transistor is electrically connected to a first terminal of the capacitor. The circuit is configured to generate a negative potential. A channel formation region of the first transistor preferably includes an oxide semiconductor.

A method for fabricating a semiconductor device and a method for operating the semiconductor device are provided. The method for fabricating a semiconductor device includes forming a first electrode layer; forming a material layer, including conductive path components, over the first electrode layer; forming a second electrode layer over the material layer; performing a forming operation, which includes initially creating, in the material layer, a conductive path that electrically connects the first electrode layer to the second electrode layer by applying one of a predetermined voltage and a predetermined current between the first and second electrode layers, the conductive path including the conductive path components; and performing a first heat-treatment process at a predetermined temperature that removes some of the conductive path components from the conductive path, wherein a resistance state of the material layer changes based on the creation or dissolution of the conductive paths.

An apparatus for assigning a plurality of access nodes of a wireless communication network to control areas includes a processing apparatus. The processing apparatus is configured to assign each access node in the plurality of access nodes to a control area of a plurality of control areas and to determine a first control phase. The first control phase is a period of time during which the assignment of access nodes to control areas remains constant. The processing apparatus is configured to, when changing from the first control phase to a following second control phase, reassign at least a subset of access nodes which were assigned during the first control phase to a first control area to a second control area and reassign at least a subset of access nodes which were assigned during the first control phase to a third control area to the first control area.

A method for transmitting uplink (UL) data requiring low latency in a wireless communication system according to the present invention, the method performed by a user equipment comprises transmitting contention PUSCH resource block (CPRB) indication information used for identifying a particular UE and/or particular data to an eNB; transmitting UL data to the eNB through CPRB resources of a contention based PUSCH (CP) zone; and receiving a hybrid automatic retransmit request (HARQ) response with respect to the UL data from the eNB through a physical hybrid ARQ indicator channel (PHICH).

A mechanism that allows the successful decoding of MCS information of cell edge UEs while retaining the performance for the other UEs of the cell is provided. In one aspect, a UE may determine an uplink control coding rate based on an uplink signal quality. The UE may encode uplink control data based on the uplink control coding rate. The UE may apply a pattern of unused resource element locations in uplink control resource elements based on the uplink control coding rate. The UE may transmit the uplink control resource elements with the pattern of unused resource element locations. In another aspect, an eNB may receive uplink control resource elements. The eNB may determine an uplink control coding rate based on a pattern of resource element locations in the uplink control resource elements. The eNB may decode uplink control data based on the uplink control coding rate.

Methods and apparatus for multiple user uplink are provided. In one aspect, method for wireless communication includes receiving an assignment of a frequency bandwidth for an uplink transmission of a station. The method further includes determining whether a portion of the assigned frequency bandwidth is unavailable for the uplink transmission. The method further includes selectively transmitting the uplink transmission based on whether the portion of the assigned frequency bandwidth is unavailable.

A VDC resource request method, user equipment, and a base station, where the VDC resource request method includes sending, by user equipment, a VDC resource request message to a base station when the user equipment needs to request a VDC resource for sending vehicle service information, where the VDC resource request message includes at least one piece of the following information: a VDC resource status list, or travel information of the user equipment, and an available VDC resource is indicated in the VDC resource status list, receiving a VDC resource allocation indication message from the base station, and sending the vehicle service information by using the VDC resource indicated by the VDC resource allocation indication message.

In a communications system which complies with LTE including a base station which transmits data by using an OFDM (Orthogonal Frequency Division Multiplexing) method as a downlink access method, and a mobile terminal, in a case in which an uplink scheduling request signal is transmitted by using an S-RACH when an Ack/Nack signal is being transmitted by using an Ack/Nack exclusive channel, the transmission of the Ack/Nack signal is stopped while the uplink scheduling request signal is transmitted.

Various communication systems may benefit from managing signal interference. For example, certain wireless communication systems may benefit from a dynamic time division duplex system involving slot allocation. A method includes allocating, by an access point, in a time division duplex frame a plurality of radio resource slots, each one of the plurality of radio resource slots being allocated for a downlink or an uplink transmission, and determining that the allocation of the downlink or uplink transmission should be changed. The method also includes applying a permutation pattern to re-allocate at least one of the plurality of radio resource slots for the downlink or uplink transmission.

A first communication device and method therein for transmitting data information at fixed time instants on a radio channel to a second communication device in a radio communications network. First, the first communication device determines that the radio channel is available for transmitting data information to the second communication device during a time period determined by the first communication device. Then, the first communication device transmits a preamble on the available radio channel after the time period. The first communication device thereafter transmits the data information on the available radio channel to the second communication device at a next fixed time instant following the transmission of the preamble.