A semiconductor device includes wiring layers formed over a semiconductor wafer, a via-layer between the wiring layers, conductive films in the wiring layers, and a via-plug in the via-layer connecting the conductive films of the wiring layers above and below, a scribe region at an outer periphery of a chip region along an edge of the semiconductor substrate and including a pad region in the vicinity of the edge, the pad region overlapping the conductive films of the plurality of wiring layers in the plan view, the plurality of wiring layers including first second wiring layers, the conductive film of the first wiring layer includes a first conductive pattern formed over an entire surface of said pad region in a plan view, and the conductive film of the second wiring layer includes a second conductive pattern formed in a part of the pad region in a plan view.

A light emitting device including a light emitting structure having a first conduction type semiconductor layer, an active layer, and a second conduction type semiconductor layer, a transparent conductive layer disposed on the light emitting structure, a metal filter having an irregular pattern disposed between the light emitting structure and the transparent conductive layer, and openings disposed between the irregular patterns in the metal filter.

It is an object to provide a transistor having a new multigate structure in which operating characteristics and reliability are improved. In a transistor having a multigate structure, which includes two gate electrodes electrically connected to each other and a semiconductor layer including two channel regions connected in series formed between a source region and a drain region, and a high concentration impurity region is formed between the two channel regions; the channel length of the channel region adjacent to the source region is longer than the channel length of the channel region adjacent to the drain region.

A method and a semiconductor device for incorporating defect mitigation structures are provided. The semiconductor device comprises a substrate, a defect mitigation structure comprising a combination of layers of doped or undoped group IV alloys and metal or non-metal nitrides disposed over the substrate, and a device active layer disposed over the defect mitigation structure. The defect mitigation structure is fabricated by depositing one or more defect mitigation layers comprising a substrate nucleation layer disposed over the substrate, a substrate intermediate layer disposed over the substrate nucleation layer, a substrate top layer disposed over the substrate intermediate layer, a device nucleation layer disposed over the substrate top layer, a device intermediate layer disposed over the device nucleation layer, and a device top layer disposed over the device intermediate layer. The substrate intermediate layer and the device intermediate layer comprise a distribution in their compositions along a thickness coordinate.

A display device comprising TFT elements having satisfactory characteristics and being easy to assemble. In the display device, a pixel emitting red light comprises a red color filter. The red color filter forms a light shielding film for the TFT elements in a driver circuit portion or in a pixel portion.

A non-linear element (e.g., a diode) with small reverse saturation current is provided. A non-linear element includes a first electrode provided over a substrate, an oxide semiconductor film provided on and in contact with the first electrode, a second electrode provided on and in contact with the oxide semiconductor film, a gate insulating film covering the first electrode, the oxide semiconductor film, and the second electrode, and a third electrode provided in contact with the gate insulating film and adjacent to a side surface of the oxide semiconductor film with the gate insulating film interposed therebetween or a third electrode provided in contact with the gate insulating film and surrounding the second electrode. The third electrode is connected to the first electrode or the second electrode.

Provided are three-dimensional nonvolatile memory devices and methods of fabricating the same. The memory devices include semiconductor pillars penetrating interlayer insulating layers and conductive layers alternately stacked on a substrate and electrically connected to the substrate and floating gates selectively interposed between the semiconductor pillars and the conductive layers. The floating gates are formed in recesses in the conductive layers.

According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a light emitting unit, a second semiconductor layer, a reflecting electrode, an oxide layer and a nitrogen-containing layer. The first semiconductor layer is of a first conductivity type. The light emitting unit is provided on the first semiconductor layer. The second semiconductor layer is provided on the light emitting unit and is of a second conductivity type. The reflecting electrode is provided on the second semiconductor layer and includes Ag. The oxide layer is provided on the reflecting electrode. The oxide layer is insulative and has a first opening. The nitrogen-containing layer is provided on the oxide layer. The nitrogen-containing layer is insulative and has a second opening communicating with the first opening.

An electronic device includes a silicon carbide layer including an n-type drift region therein, a contact forming a junction, such as a Schottky junction, with the drift region, and a p-type junction barrier region on the silicon carbide layer. The p-type junction barrier region includes a p-type polysilicon region forming a P-N heterojunction with the drift region, and the p-type junction barrier region is electrically connected to the contact. Related methods are also disclosed.

An object is to provide a semiconductor device including an oxide semiconductor film, which has stable electrical characteristics and high reliability. A stack of first and second material films is formed by forming the first material film (a film having a hexagonal crystal structure) having a thickness of 1 nm to 10 nm over an insulating surface and forming the second material film having a hexagonal crystal structure (a crystalline oxide semiconductor film) using the first material film as a nucleus. As the first material film, a material film having a wurtzite crystal structure (e.g., gallium nitride or aluminum nitride) or a material film having a corundum crystal structure (α-Al2O3, α-Ga2O3, In2O3, Ti2O3, V2O3, Cr2O3, or α-Fe2O3) is used.

A semiconductor device, includes a semiconductor substrate, a first interconnect layer formed over the semiconductor substrate, a gate electrode formed in the first interconnect layer, a gate insulating film formed over the gate electrode, a second interconnect layer formed over the gate insulating film, an oxide semiconductor layer formed in the second interconnect layer, and a via formed in the second interconnect layer and connected to the oxide semiconductor layer. The gate electrode, the gate insulating film and the oxide semiconductor layer overlap in a plan view.

Semiconductor devices including a stressor in a recess and methods of forming the semiconductor devices are provided. The methods may include forming a trench in an active region and the trench may include a notched portion of the active region. The methods may also include forming an embedded stressor in the trench. The embedded stressor may include a lower semiconductor layer and an upper semiconductor layer, which has a width narrower than a width of the lower semiconductor layer. A side of the upper semiconductor layer may not be aligned with a side of the lower semiconductor layer and an uppermost surface of the upper semiconductor layer may be higher than an uppermost surface of the active region.

It is an object to manufacture a highly reliable semiconductor device including a thin film transistor whose electric characteristics are stable. An insulating layer which covers an oxide semiconductor layer of the thin film transistor contains a boron element or an aluminum element. The insulating layer containing a boron element or an aluminum element is formed by a sputtering method using a silicon target or a silicon oxide target containing a boron element or an aluminum element. Alternatively, an insulating layer containing an antimony (Sb) element or a phosphorus (P) element instead of a boron element covers the oxide semiconductor layer of the thin film transistor.

A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided. Further, a method for manufacturing a semiconductor device in which plural kinds of thin film transistors of different structures are formed over one substrate to form plural kinds of circuits and in which the number of steps is not greatly increased is provided. After a metal thin film is formed over an insulating surface, an oxide semiconductor layer is formed thereover. Then, oxidation treatment such as heat treatment is performed to oxidize the metal thin film partly or entirely. Further, structures of thin film transistors are different between a circuit in which emphasis is placed on the speed of operation, such as a logic circuit, and a matrix circuit.

A light-emitting element includes a first electrode, a first light-emitting layer formed over the first electrode, a second light-emitting layer formed on and in contact with the first light-emitting layer to be in contact therewith, and a second electrode formed over the second light-emitting layer. The first light-emitting layer includes a first light-emitting substance and a hole-transporting organic compound, and the second light-emitting layer includes a second light-emitting substance and an electron-transporting organic compound. Substances are selected such that a difference in LUMO levels between the first light-emitting substance, the second light-emitting substance, and the electron-transporting organic compound is 0.2 eV or less, a difference in HOMO levels between the hole-transporting organic compound, the first light-emitting substance, and the second light-emitting substance is 0.2 eV or less, and a difference in LUMO levels between the hole-transporting organic compound and the first light-emitting substance is greater than 0.3 eV.

A semiconductor film having an impurity region to which at least an n-type or p-type impurity is added and a wiring are provided. The wiring includes a diffusion prevention film containing a conductive metal oxide, and a low resistance conductive film over the diffusion prevention film. In a contact portion between the wiring and the semiconductor film, the diffusion prevention film and the impurity region are in contact with each other. The diffusion prevention film is framed in such a manner that a conductive film is exposed to plasma generated from a mixed gas of an oxidizing gas and a halogen-based gas to form an oxide of a metal material contained in the conductive film, the conductive film in which the oxide of the metal material is formed is exposed to an atmosphere containing water to be fluidized, and the fluidized conductive film is solidified.

When a semiconductor substrate of a semiconductor device is viewed from above, an isolation region, an IGBT region, and a diode region are all formed adjacent to each other. A deep region that is connected to a body region and an anode region is formed in the isolation region. A drift region is formed extending across the isolation region, the IGBT region, and the diode region, inside the semiconductor substrate. A collector region that extends across the isolation region, the IGBT region and the diode region, and a cathode region positioned in the diode region, are formed in a region exposed on a lower surface of the semiconductor substrate. A boundary between the collector region and the cathode region is in the diode region, in a cross-section that cuts across a boundary between the isolation region and the diode region, and divides the isolation region and the diode region. The collector region formed in the isolation region has a higher dopant impurity concentration than the collector region in the IGBT region.

The present invention has an object of providing a light-emitting device including an OLED formed on a plastic substrate, which prevents degradation due to penetration of moisture or oxygen. On a plastic substrate, a plurality of films for preventing oxygen or moisture from penetrating into an organic light-emitting layer in the OLED (“barrier films”) and a film having a smaller stress than the barrier films (“stress relaxing film”), the film being interposed between the barrier films, are provided. Owing to a laminate structure, if a crack occurs in one of the barrier films, the other barrier film(s) can prevent moisture or oxygen from penetrating into the organic light emitting layer. The stress relaxing film, which has a smaller stress than the barrier films, is interposed between the barrier films, making it possible to reduce stress of the entire sealing film. Therefore, a crack due to stress hardly occurs.

Methods, devices, and systems are provided for a select device that can include a semiconductive stack of at least one semiconductive material formed on a first electrode, where the semiconductive stack can have a thickness of about 700 angstroms (Å) or less. Each of the at least one semiconductive material can have an associated band gap of about 4 electron volts (eV) or less and a second electrode can be formed on the semiconductive stack.

The silicon nitride layer 910 formed by plasma CVD using a gas containing a hydrogen compound such as silane (SiH4) and ammonia (NH3) is provided on and in direct contact with the oxide semiconductor layer 905 used for the resistor 354, and the silicon nitride layer 910 is provided over the oxide semiconductor layer 906 used for the thin film transistor 355 with the silicon oxide layer 909 serving as a barrier layer interposed therebetween. Therefore, a higher concentration of hydrogen is introduced into the oxide semiconductor layer 905 than into the oxide semiconductor layer 906. As a result, the resistance of the oxide semiconductor layer 905 used for the resistor 354 is made lower than that of the oxide semiconductor layer 906 used for the thin film transistor 355.

To provide a semiconductor device which has transistor characteristics with little variation and includes an oxide semiconductor. The semiconductor device includes an insulating film over a conductive film and an oxide semiconductor film over the insulating film. The oxide semiconductor film includes a first oxide semiconductor layer, a second oxide semiconductor layer over the first oxide semiconductor layer, and a third oxide semiconductor layer over the second oxide semiconductor layer. The energy level of a bottom of a conduction band of the second oxide semiconductor layer is lower than those of the first and third oxide semiconductor layers. An end portion of the second oxide semiconductor layer is positioned on an inner side than an end portion of the first oxide semiconductor layer.

It is an object to provide a highly reliable semiconductor device with good electrical characteristics and a display device including the semiconductor device as a switching element. In a transistor including an oxide semiconductor layer, a needle crystal group provided on at least one surface side of the oxide semiconductor layer grows in a c-axis direction perpendicular to the surface and includes an a-b plane parallel to the surface, and a portion except for the needle crystal group is an amorphous region or a region in which amorphousness and microcrystals are mixed. Accordingly, a highly reliable semiconductor device with good electrical characteristics can be formed.

A semiconductor device including a circuit which does not easily deteriorate is provided. The semiconductor device includes a first transistor, a second transistor, a first switch, a second switch, and a third switch. A first terminal of the first transistor is connected to a first wiring. A second terminal of the first transistor is connected to a second wiring. A gate and a first terminal of the second transistor are connected to the first wiring. A second terminal of the second transistor is connected to a gate of the first transistor. The first switch is connected between the second wiring and a third wiring. The second switch is connected between the second wiring and the third wiring. The third switch is connected between the gate of the first transistor and the third wiring.

A low resistivity interface material is provided between a self-aligned vertical heater element and a contact region of a selection device. A phase change chalcogenide material is deposited directly on the vertical heater element. In an embodiment, the vertical heater element in L-shaped, having a curved vertical wall along the wordline direction and a horizontal base. In an embodiment, the low resistivity interface material is deposited into a trench with a negative profile using a PVD technique. An upper surface of the low resistivity interface material may have a tapered bird-beak extension.

An amorphous oxide thin film containing amorphous oxide is exposed to an oxygen plasma generated by exciting an oxygen-containing gas in high frequency. The oxygen plasma is preferably generated under the condition that applied frequency is 1 kHz or more and 300 MHz or less and pressure is 5 Pa or more. The amorphous oxide thin film is preferably exposed by a sputtering method, ion-plating method, vacuum deposition method, sol-gel method or fine particle application method.

An object is to manufacture and provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which a semiconductor layer including a channel formation region serves as an oxide semiconductor film, heat treatment for reducing impurities such as moisture (heat treatment for dehydration or dehydrogenation) is performed after an oxide insulating film serving as a protective film is formed in contact with an oxide semiconductor layer. Then, the impurities such as moisture, which exist not only in a source electrode layer, in a drain electrode layer, in a gate insulating layer, and in the oxide semiconductor layer but also at interfaces between the oxide semiconductor film and upper and lower films which are in contact with the oxide semiconductor layer, are reduced.

A transistor device includes a compound semiconductor body having a first surface and a two-dimensional charge carrier gas disposed below the first surface in the compound semiconductor body. The transistor device further includes a source in contact with the two-dimensional charge carrier gas and a drain spaced apart from the source and in contact with the two-dimensional charge carrier gas. A first passivation layer is in contact with the first surface of the compound semiconductor body, and a second passivation layer is disposed on the first passivation layer. The second passivation layer has a different etch rate selectivity than the first passivation layer. A gate extends through the second passivation layer into the first passivation layer.

A vehicle collision damage mitigation system includes: a vehicle having a crashable zone on a front side of a dash panel in a vehicle longitudinal direction; a body airbag device that inflates a body airbag that is provided on a front surface of the dash panel by a pressure of gas generated by a gas generating device; a detector that detects whether a mode of a frontal collision of the vehicle is a full-overlap collision or another collision; and a control unit that operates the gas generating device when detecting a collision other than the full-overlap collision on the basis of a detection result of the detector and that does not operate the gas generating device when detecting the full-overlap collision.

A releasable water ski binding system includes a trigger mechanism that causes releasable bindings to release a boot from a ski. The trigger mechanism senses a displacement of a portion of a body of a skier past a point of criticality and causes the releasable bindings to release the boot from the ski.

A four-wheel independent suspension system for an electric wheelchair includes a chassis, two front wheels each fixed to a front rod respectively, and two rear wheels each fixed to a rear rod respectively. The chassis includes a rail extending in a width direction of the chassis, each of the front and rear rods has one end connected to a square first connecting sleeve, in the first connecting sleeve is disposed a first shock absorber which includes a rectangular outer pipe, and a rectangular inner pipe disposed in and rotated degrees with respect to the outer pipe, the edges of the inner pipe are abutted against the inner surface of the outer pipe, between each of the edges of the inner pipe and the inner space of the outer pipe is disposed an elastic rubber, the inner pipe of each of the first shock absorbers is sleeved on the rail.

A control arrangement for a hydropneumatic suspension system and a hydropneumatic suspension system are provided. The control arrangement has a pressure supply connection, a return connection, a piston chamber connection adapted to be connected to the piston chamber of a suspension cylinder of the hydropneumatic suspension system, an annular chamber connection adapted to be connected to the annular chamber of the suspension cylinder, and at least one controllable valve arrangement comprising a plurality of switch positions via which the pressure supply connection and the return connection are connectable to the piston chamber connection and the annular chamber connection. The annular chamber connection is in flow connection with the return connection via a pressure-limiting line having a hydraulically controllable pressure-limiting element. The pressure-limiting element has a control input adapted to be acted upon via a control line by a control pressure which is limitable to a predefinable pressure limit.

A reconfigurable fixed position suspension and support structure attached to the trailer body using a locking device consisting of pins, bolts and/or other fastening devices. The support structure has a removable locking device that when attached to the support structure locks the support structure and suspension into a fixed position relative to the trailer body. When the trailer is not in operation, the locking device can be removed allowing the suspension group to be reconfigured, and each suspension to be repositioned relative to the trailer body. The removable locking device is then reattached to the suspension support structure locking the support structure and suspension into a new fixed position relative to the trailer body.

An embodiment of the invention includes a three-component rear-wheel suspension system for interconnecting to a bicycle frame and a shock absorbing device. The three components are an upper stay pivotally attached to the frame, a lower stay having a rear wheel mount and pivotally connected to the upper stay at a location generally above the rear wheel mount, and a link pivotally connected to the frame at a location below where the upper stay is attached to the frame and pivotally coupled to the lower stay. The general arrangement of the linkages between the three components permit compression of the suspension system (i.e. relative upward movement of the rear wheel) with limited chainstay lengthening.

A ski system includes a ski, a heel binding provided on an upper surface of the ski, a toe binding mount provided on the upper surface of the ski forward of the heel binding, a toe binding releasably mounted to the toe binding mount, and a quick-release locking mechanism for locking the toe binding to the toe binding mount. The quick-release locking mechanism is configured for release by hand.

An airbag system for protecting rear seat occupants in dynamic side impacts using an improved packaging arrangement is provided. The system includes seat base and seat back frames. The seat back frame is movable between an upright position and a reclined position. The system further includes a unified airbag having a pelvic portion and a thoracic portion. The pelvic portion is positioned adjacent to the seat base frame. The thoracic portion is positioned adjacent to the seat back frame. The unified airbag is attached to the seat base frame by fixed anchors and to the seat back frame by a movable anchor. A grooved track is provided for attachment of the movable anchor. The airbag may be a strip shape or a triangular shape. One or more tethers may be attached to the unified airbag.

Interior panels having integrated airbag doors for motor vehicles and methods for making such interior panels are provided herein. In one example, an interior panel comprises a substrate having outer and inner surfaces and an opening extending therethrough. A multi-shot injection molded airbag chute-door assembly is mounted to the substrate and comprises a chute wall that at least partially surrounds an interior space. A door flap portion is pivotally connected to the chute wall and at least partially covers the opening. A perimeter flange extends from the chute wall and has a flange section that overlies the outer surface of the substrate. A molded-in lip feature extends from the flange section and contacts the outer surface to form a seal between the flange section and the substrate. A skin covering extends over the substrate and a foam is disposed between the skin covering and the substrate.

Aspirator for an airbag deploying into a vehicle passenger compartment in order to protect a driver of the vehicle during an accident, includes a housing having an innermost and an outermost wall and defining an outlet at a distal end leading to an airbag and coaxial flow passages between the innermost and outermost walls into which air from a passenger compartment flows to inflate the airbag. An aspiration system is coupled to the housing and configured to direct gas into the flow passages to mix with the air from the passenger compartment in the flow passages. The aspiration system includes openings on an inner side of the outermost wall and on an outer side of the innermost wall. These openings are configured such that the gas is directed therefrom into the flow passages in a direction substantially parallel to a flow direction of air into the flow passages.

A driver seat airbag system includes: an airbag that is housed in a pad section of a steering wheel, receives a supply of gas for inflation during a collision of a vehicle, and is inflated and deployed between the steering wheel and an occupant in a driver seat; and an inflator that generates the gas. The airbag includes an auxiliary inflated section that is inflated to a front of the vehicle in conjunction with inflation and deployment of the airbag, so as to enter a space between a rim and a spoke of the steering wheel.

A cutting tool cutting tool may include a tool body having a plurality of blades extending radially therefrom; and a plurality of rotatable cutting elements mounted on at least one of the plurality of blades, wherein the plurality of rotatable cutting elements are mounted on the at least one blade in a nose and/or shoulder region of the cutting tool at a side rake angle ranging from about 10 to about 30 degrees or −10 to about −30 degrees.

A tubular string is advanced with a bottom hole assembly as the hole is drilled and reamed in a desired direction with the aid of directional drilling equipment adjacent the bit. When the advanced tubular forms the desired lap to the existing tubular, the assembly can be configured to cement the tubular and expansion can then be accomplished to fill the annular space and enhance the cement bonding. The expansion equipment can create a bottom bell on the expanded tubular and expand the top end into a bell of the existing tubular so that a monobore is created as the process is repeated with each added string. Numerous variations are contemplated for each single trip including but not limited to the direction of expansion, whether cementing or expansion occurs first, reforming folded tubing in the hole as well as the nature of the expansion tool and pressure control when drilling.

Methods and systems are described for improved drilling operations through the use of real-time drilling data to predict bit wear, lithology, pore pressure, a rotating friction coefficient, permeability, and cost in real-time and to adjust drilling parameters in real-time based on the predictions. The real-time lithology prediction is made by processing the real-time drilling data through a multilayer neural network. The real-time bit wear prediction is made by using the real-time drilling data to predict a bit efficiency factor and to detect changes in the bit efficiency factor over time. These predictions may be used to adjust drilling parameters in the drilling operation in real-time, subject to override by the operator. The methods and systems may also include determining various downhole hydraulics parameters and a rotary friction factor. Historical data may be used in combination with real-time data to provide expert system assistance and to identify safety concerns.

A drill bit assembly for measuring reservoir formation properties comprises a bit head and a pin body, and an electrically insulated gap joint between two conductive parts of the drill bit assembly. The bit head has a cutting end and an opposite connecting end with an engagement section. The pin body comprises a connecting end with an engagement section. The pin connecting end is connected to the bit head connecting end such that the engagement sections overlap. The electrically insulating gap joint can fill a gap between the bit head and pin body engagement sections such that the bit head and pin body are mechanically connected together at the connecting ends but electrically separated. Alternatively or additionally, the pin body can have two pieces which are separated by an electrically insulating gap joint. An electrical conductor is electrically connected at a first end to the bit head and is communicable at a second end with an alternating current signal to transmit an alternating current into the bit head, thereby inducing an electric current into a reservoir formation adjacent the bit head. Electronic equipment includes measurement circuitry configured to determine the alternating current at the bit head, the alternating current being inversely proportional to a bit resistivity of the formation.

According to an embodiment, a drilling fluid comprises: water and a set accelerator, wherein the drilling fluid has a 10 minute gel strength of less than 20 lb*ft/100 sq ft, wherein the drilling fluid has a density in the range of about 9 to about 14 pounds per gallon, wherein the drilling fluid remains pourable for at least 5 days, and wherein when at least one part of the drilling fluid mixes with three parts of a cement composition consisting of water and cement, the drilling fluid cement composition mixture develops a compressive strength of at least 1,200 psi. According to another embodiment, a method of using the drilling fluid comprises the steps of: introducing the drilling fluid into at least a portion of a subterranean formation, wherein at least a portion of the drilling fluid is capable of mixing with a cement composition.

A cutting element for an earth-boring tool. The cutting element comprises a substrate base, and a volume of polycrystalline diamond material on an end of the substrate base. The volume of polycrystalline diamond material comprises a generally conical surface, an apex centered about a longitudinal axis extending through a center of the substrate base, a flat cutting surface extending from a first point at least substantially proximate the apex to a second point on the cutting element more proximate a lateral side surface of the substrate base. Another cutting element is disclosed, as are a method of manufacturing and a method of using such cutting elements.

An arrangement having a piston configured to move along an axial pathway a rotating seal configured to seal an inside environment from an outside environment, the rotating seal configured to be acted upon by a pressure exerted from the piston, a differential pressure sensor measuring a pressure difference between a first fluid from the outside environment and a second fluid on the inside environment, a motor connected to the piston, the motor configured to actuate the piston to a position along an axial pathway and an electronic feedback control system connected to the motor, the electronic feedback system configured to interface with the differential pressure sensor and maintain a pressure generated by the piston onto the rotating seal to a desired pressure.

Systems and methods for processing drilling data. One embodiment provides a method comprising building user-designed contexts (which can be designated as built-in contexts) for drilling structures. The method also comprises orchestrating module execution within the user-designed contexts. The method further comprises providing data from the user-designed contexts to such modules via an interface. Some methods include monitoring drilling data to detect events (for instance departure from a pseudolog) and orchestrating module execution responsive thereto. The method can include exposing the orchestration of the execution of the module instances as a service. Moreover, some embodiments provide extra-contextual application program interfaces. In addition, or in the alternative, some embodiments schedule the orchestration of the modules based on declarations related to the inputs and/or outputs of the modules.

Mobile drilling devices and systems, methods, and computer-readable media for controlling such devices are provided. One method includes receiving user input from a user of a mobile computing device. The method further includes transmitting data based on the user input from the mobile computing device to a control circuit of a mobile drilling device via a wireless network connection. The method further includes generating a plurality of control signals based on the data received from the mobile computing device. Each of the plurality of control signals is configured to control movement of a separate one of a plurality of movement devices of the mobile drilling device. The plurality of movement devices are configured to move the mobile drilling device between locations.

A control and monitoring system controls and monitors a high power laser system for performing high power laser operations. The control and monitoring system is configured to perform high power laser operation on, and in, remote and difficult to access locations.

In at least some embodiments, a pulsed-electric drilling system includes a bit that extends a borehole by detaching formation material with pulses of electric current, and a drillstring that defines at least one path for a fluid flow to the bit to flush detached formation material from the borehole. A feed pipe transports at least a part of said fluid flow to said path, and the feed pipe is equipped with a cooling mechanism to cool the fluid flow. The use of a cooled fluid flow may enhance the performance of the pulsed-electric drilling process.

Methods and apparatus are described to drill and complete wellbores. Such wellbores include extended reach horizontal wellbores, for example in shales, deep subsea extended reach wellbores, and multilateral wellbores. Specifically, the invention provides simple threaded subassemblies that are added to existing threaded tubular drilling and completion equipment which are used to dramatically increase the lateral reach using that existing on-site equipment. These subassemblies extract power from downward flowing clean mud, or other fluids, in an annulus to provide additional force or torque on tubular elements within the wellbore, while maintaining circulation, to extend the lateral reach of the drilling equipment and completion equipment. These added elements include combinations of The Leaky Seal™, a Cross-Over, The Force Sub™ and The Torque Sub™. The use of such additional simple elements allow lighter drilling equipment to be used to reach a given lateral distance, therefore reducing drilling costs.