A semiconductor device includes a substrate comprising a trench; a gate dielectric layer formed over a surface of the trench; a gate electrode positioned at a level lower than a top surface of the substrate, and comprising a lower buried portion embedded in a lower portion of the trench over the gate dielectric layer and an upper buried portion positioned over the lower buried portion; and a dielectric work function adjusting liner positioned between the lower buried portion and the gate dielectric layer; and a dipole formed between the dielectric work function adjusting liner and the gate dielectric layer.

A method for forming a V-NAND device is disclosed. Specifically, the method involves deposition of at least one of semiconductive material, conductive material, or dielectric material to form a channel for the V-NAND device. In addition, the method may involve a pretreatment step where ALD, CVD, or other cyclical deposition processes may be used to improve adhesion of the material in the channel.

Embodiments of the inventive concepts provide a method for manufacturing a semiconductor device. The method includes forming a stack structure including insulating layers and sacrificial layers which are alternately and repeatedly stacked on a substrate. A first photoresist pattern is formed on the stack structure. A first part of the stack structure is etched to form a stepwise structure using the first photoresist pattern as an etch mask. The first photoresist pattern includes a copolymer including a plurality of units represented by at least one of the following chemical formulas 1 to 3, wherein “R1”, “R2”, “R3”, “p”, “q” and “r” are the same as defined in the description.

A performance of a semiconductor device is improved. A film, which is made of silicon, is formed in a resistance element formation region on a semiconductor substrate, and an impurity, which is at least one type of elements selected from a group including a group 14 element and a group 18 element, is ion-implanted into the film, and a film portion which is formed of the film of a portion into which the impurity is ion-implanted is formed. Next, an insulating film with a charge storage portion therein is formed in a memory formation region on the semiconductor substrate, and a conductive film is formed on the insulating film.

A method of manufacturing a semiconductor device according to one embodiment includes forming a first film including a first metal above a processing target member. The method includes forming a second film including two or more types of element out of a second metal, carbon, and boron above the first film. The method includes forming a third film including the first metal above the second film. The method includes forming a mask film by providing an opening part to a stacked film including the first film, the second film and the third film. The method includes processing the processing target member by performing etching using the mask film as a mask.

Embodiments of the inventive concept provide a method for manufacturing a semiconductor device. The method includes forming a stack structure by alternately and repeatedly stacking insulating layers and sacrificial layers on a substrate, sequentially forming a first lower layer and a first photoresist pattern on the stack structure, etching the first lower layer using the first photoresist pattern as an etch mask to form a first lower pattern. A first part of the stack structure is etched to form a stepwise structure using the first lower pattern as an etch mask. The first lower layer includes a novolac-based organic polymer, and the first photoresist pattern includes a polymer including silicon.

A TFT and manufacturing method thereof, an array substrate and manufacturing method thereof, an X-ray detector and a display device are disclosed. The manufacturing method includes: forming a gate-insulating-layer thin film (3'), a semiconductor-layer thin film (4') and a passivation-shielding-layer thin film (5') successively; forming a pattern (5') that includes a passivation shielding layer through one patterning process, so that a portion, sheltered by the passivation shielding layer, of the semiconductor-layer thin film forms a pattern of an active layer (4a'); and performing an ion doping process to a portion, not sheltered by the passivation shielding layer, of the semiconductor-layer thin film to form a pattern comprising a source electrode (4c') and a drain electrode (4b'). The source electrode (4c') and the drain electrode (4b') are disposed on two sides of the active layer (4a') respectively and in a same layer as the active layer (4a'). The manufacturing method can reduce the number of patterning processes and improve the performance of the thin film transistor in the array substrate.

A method of forming a semiconductor device is provided such that a trench is formed in a semiconductor body at a first surface of the semiconductor body. Dopants are introduced into a first region at a bottom side of the trench by ion implantation. A filling material is formed in the trench. Dopants are introduced into a second region at a top side of the filling material. Thermal processing of the semiconductor body is carried out and is configured to intermix dopants from the first and the second regions by a diffusion process along a vertical direction perpendicular to the first surface.

A semiconductor device is provided that includes an n-type field effect transistor including a plurality of vertically stacked silicon-containing nanowires located in one region of a semiconductor substrate, and a p-type field effect transistor including a plurality of vertically stacked silicon germanium alloy nanowires located in another region of a semiconductor substrate. Each vertically stacked silicon-containing nanowire of the n-type field effect transistor has a different shape than the shape of each vertically stacked silicon germanium alloy nanowire of the p-type field effect transistor.

To provide a semiconductor device having improved reliability. After formation of an n+ type semiconductor region for source/drain, a first insulating film is formed on a semiconductor substrate so as to cover a gate electrode and a sidewall spacer. After heat treatment, a second insulating film is formed on the first insulating film and a resist pattern is formed on the second insulating film. Then, these insulating films are etched with the resist pattern as an etching mask. The resist pattern is removed, followed by wet washing treatment. A metal silicide layer is then formed by the salicide process.

A method of fabricating a semiconductor device includes forming a gate strip including a dummy electrode and a TiN layer. The method includes removing a first portion of the dummy electrode to form a first opening over a P-active region and an isolation region. The method includes performing an oxygen-containing plasma treatment on a first portion of the TiN layer; and filling the first opening with a first metal material. The method includes removing a second portion of the dummy electrode to form a second opening over an N-active region and the isolation region. The method includes performing a nitrogen-containing plasma treatment on a second portion of the TiN layer; and filling the second opening with a second metal material. The second portion of the TiN layer connects to the first portion of the TiN layer over the isolation region.

A method for forming a semiconductor structure includes forming a strained silicon germanium layer on top of a substrate. At least one patterned hard mask layer is formed on and in contact with at least a first portion of the strained silicon germanium layer. At least a first exposed portion and a second exposed portion of the strained silicon germanium layer are oxidized. The oxidizing process forms a first oxide region and a second oxide region within the first and second exposed portions, respectively, of the strained silicon germanium.

A method for manufacturing an LDMOS device includes: providing a semiconductor substrate (200), forming a drift region (201) in the semiconductor substrate (200), forming a gate material layer on the semiconductor substrate (200), and forming a negative photoresist layer (204) on the gate material layer; patterning the negative photoresist layer (204), and etching the gate material layer by using the patterned negative photoresist layer (204) as a mask so as to form a gate (203); forming a photoresist layer having an opening on the semiconductor substrate (200) and the patterned negative photoresist layer (204), the opening corresponding to a predetermined position for forming a body region (206); and injecting the body region (206) by using the gate (203) and the negative photoresist layer (204) located above the gate (203) as a self-alignment layer, so as to form a channel region.

The on-state characteristics of a transistor are improved and thus, a semiconductor device capable of high-speed response and high-speed operation is provided. A highly reliable semiconductor device showing stable electric characteristics is made. The semiconductor device includes a transistor including a first oxide layer; an oxide semiconductor layer over the first oxide layer; a source electrode layer and a drain electrode layer in contact with the oxide semiconductor layer; a second oxide layer over the oxide semiconductor layer; a gate insulating layer over the second oxide layer; and a gate electrode layer over the gate insulating layer. An end portion of the second oxide layer and an end portion of the gate insulating layer overlap with the source electrode layer and the drain electrode layer.

A semiconductor structure is disclosed. The semiconductor structure includes a source trench in a drift region, the source trench having a source trench dielectric liner and a source trench conductive filler surrounded by the source trench dielectric liner, a source region in a body region over the drift region. The semiconductor structure also includes a patterned source trench dielectric cap forming an insulated portion and an exposed portion of the source trench conductive filler, and a source contact layer coupling the source region to the exposed portion of the source trench conductive filler, the insulated portion of the source trench conductive filler increasing resistance between the source contact layer and the source trench conductive filler under the patterned source trench dielectric cap. The source trench is a serpentine source trench having a plurality of parallel portions connected by a plurality of curved portions.

A method for producing an integrated power transistor circuit includes forming at least one transistor cell in a cell array, each transistor cell having a doped region formed in a semiconductor substrate and adjoining a first surface of the semiconductor substrate on a first side of the semiconductor substrate, depositing a contact layer on the first side, structuring the contact layer to form a contact structure from the contact layer, the contact structure having, in a projection of the cell array orthogonal to the first surface, a first section and, outside the cell array, a second section which connects the first section to an interface structure, and forming an electrode structure on and in direct contact with the first section in the orthogonal projection of the cell array, the electrode structure being absent outside the cell array.

A semiconductor device includes a substrate comprising a channel region and a recess, wherein the recess is located at both side of the channel region; a gate structure formed over the channel region; a first SiP layer covering bottom corners of the gate structure and the recess; and a second SiP layer formed over the first SiP layer and in the recess, wherein the second SiP layer has a phosphorus concentration higher than that of the first SiP layer.

A method of production of a semiconductor device comprising a semiconductor layer forming step of forming a semiconductor layer including an inorganic oxide semiconductor on a board, a passivation film forming step of forming a passivation film comprising an organic material so as to cover the semiconductor layer, a baking step of baking the passivation film, and a cooling step of cooling the passivation film after baking, herein, in the cooling step, a cooling speed from a baking temperature at the time of baking in the baking step to a temperature 50° C. lower than the baking temperature is substantially controlled to 0.5 to 5° C./min in range is provided.

Provided is a method for fabricating an electronic device, the method including: preparing a carrier substrate including an element region and a wiring region; forming a sacrificial layer on the carrier substrate; forming an electronic element on the sacrificial layer of the element region; forming a first elastic layer having a corrugated surface on the first elastic layer of the wiring region; forming a metal wirings electrically connecting the electronic element thereto, on the first elastic layer of the wiring region; forming a second elastic layer covering the metal wirings, on the first elastic layer; forming a high rigidity pattern filling in a recess of the second elastic layer above the electronic element so as to overlap the electronic element, and having a corrugated surface; forming a third elastic layer on the second elastic layer and the high rigidity pattern; and separating the carrier substrate.

Hall effect devices and field effect transistors are formed incorporating a carbon-based nanostructure layer such as carbon nanotubes and/or graphene with a sacrificial metal layer formed there over to protect the carbon-based nanostructure layer during processing.

A method is provided for making smooth crystalline semiconductor thin-films and hole and electron transport films for solar cells and other electronic devices. Such semiconductor films have an average roughness of 3.4 nm thus allowing for effective deposition of additional semiconductor film layers such as perovskites for tandem solar cell structures which require extremely smooth surfaces for high quality device fabrication.

An organic layer deposition assembly for depositing a deposition material on a substrate includes a deposition source configured to spray the deposition material, a deposition source nozzle arranged in one side of the deposition source and including deposition source nozzles arranged in a first direction, a patterning slit sheet arranged to face the deposition source nozzle and having patterning slits in a second direction that crosses the first direction, and a correction sheet arranged between the deposition source nozzle and the patterning slit sheet and configured to block at least a part of the deposition material sprayed from the deposition source.

A method of forming microelectronic systems on a flexible substrate includes depositing a plurality of layers on one side of the flexible substrate. Each of the plurality of layers is deposited from one of a plurality of sources. A vertical projection of a perimeter of each one of the plurality of sources does not intersect the flexible substrate. The flexible substrate is in motion during the depositing the plurality of layers via a roll to roll feed and retrieval system.

Foreign objects that have entered inside an insertion body are suppressed from reaching a detector side. In a buckle device, when a tongue plate is attached, an ejector slides downwards inside a buckle body, opening a through hole in a partitioning wall of a lower cover at the upper side. A main body portion of a slider member of a buckle switch is inserted into the through hole, closing off a portion of the through hole that has been opened by the ejector. Hence it is suppressed that foreign objects discharged through an insertion through hole in the buckle body to outside the buckle body pass through the through hole and reach the buckle switch side further than the partitioning wall.

An apparatus and method for carrying and storing a portion of rope is claimed. A portion of rope is braided and wound about two complementary loops. Attached to one complementary loop is a flexible fastener. The flexible fastener can be passed through the second complementary loop and attached to itself. The apparatus can then be worn as a bracelet. When the rope is needed, the person can unwind the rope. After using the rope, the rope can be rewound and then bound with the flexible fastener.

Substrates such as sheet metal components may be kept spaced apart from each other using a molded polymeric spacing device. The spacing device has a main body with a thickness corresponding to the desired minimum spacing between the substrates and, extending from the main body or a base connected to said main body, an attachment member capable of being inserted into an opening in one of the substrates, but resistant to being easily withdrawn from such opening. Noise and vibration that might otherwise be generated or propagated by closely proximate substrates are reduced through the use of such molded polymeric spacing devices, which may be integrally fashioned from a rubber.

A device clip includes a first jaw member, and a second jaw member having fixed end pivotally connected to one end of the first jaw member and a free end provided with a rod member that is movable along the major axis of the second jaw member by an external force and can return to its former position when the external force disappears. Thus, the other end of the first jaw member is detachably lockable to the rod member at the free end of the second jaw member for enabling the device clip to conveniently and steadily link two objects together, for example, to link a camera bag to a backpack.

The present invention discloses a driving device for a belt axle of a winch, which addresses the problems existing in conventional winches, for example the driving devices being out of work attributing to wearing of the unidirectional teeth on the fixed base and rotary body of the winch. The rotary cylinder of the driving device of the invention is provided with insertion holes into which a crow bar can be inserted. The fixed base is fixedly connected with the belt axle of the winch. The rotary cylinder is covered on the fixed base and fixed thereto in the axial direction. A unidirectional mechanism is located between the rotary cylinder and the belt axle to be engaged by unidirectional teeth. As the shift element and shift plates can be conveniently removed, the worn shift plates or shift element can be conveniently replaced after being used for a long period.

An exemplary device that is useful for controlling vibrations of an elevator load bearing member includes a guide. A mass is moveable relative to the guide responsive to vibration of the load bearing member to introduce a force to counter the vibration.

An apparatus for preserving human or animal remains comprising a burial chamber further comprising a hermetically sealed interior containing gas or water vapor, wherein the gas creates a gas pressure within the hermetically sealed interior, and a vacuum pump, wherein the vacuum pump is in functional communication with the hermetically sealed interior, wherein the vacuum pump operates to evacuate the gas or the water vapor from the hermetically sealed interior, and wherein the vacuum pump is intermittently activated to reduce the gas pressure within the hermetically sealed interior for a desiccating duration.

A containment device for holding the remains of a cremated individual. The containment device may include a receptacle with a rim section and a containment section. A cap may be sealed on the receptacle once the remains of the cremated individual are within the containment section. The outside of the receptacle may include an attachment component. Therefore, the receptacle may be displayed in one's home for a time and then may be permanently mounted in a memorial site. An anchor may attach to the attachment component to prevent theft.

A carrier is provided for facilitating the carrying and transportation of a funerary container having a bottom surface, a plurality of side surfaces and a top surface, along with a length and width and interior large enough to accommodate an un-cremated corpse. The carrier includes a base member having a length generally long enough to span the width of the funerary container and a upper surface sized and configured for receiving the bottom surface of the funerary container. An upstanding member has a lower end coupled to the base member and an upper end. The upstanding member extends in a plane generally perpendicular to the base member. A handle member is provided that is coupled to the upstanding member. The handle includes a hand receiving surface engageable by the hand of the user.

A coffin in an environmentally friendly material with a special shape and fittings at the places where the coffin is to be lifted, which is new in that the coffin itself has vertical recesses directed inwards, which cover both the coffin box and the lid, and wherein at each side of the coffin box bottom, a transverse lever or pipe has been placed, and wherein said pipe or lever is through-going to each and across each recess.

A casket assembly includes a bottom panel, side panels, flaps and end panels. The bottom panel is formed of a pliable material. The side panels are formed intrinsically with the bottom panel. Each side panel includes a lower section and an upper section foldably attached thereto. The lower section extends vertically upward from the bottom panel. In a first configuration, the upper section extends upward from the lower section. In a second configuration, the upper section extends in a direction other than vertically upward from the lower section. The end panels are formed intrinsically with the bottom panel. The flaps extend laterally from each end of the upper section. The flaps in the first configuration extend upward from a first vertical level defined by the top portion of the lower section, and in the second configuration extend downward from the first vertical level.

A body bag (900) can be assembled by a stitching process while providing increased fluid retention capabilities. An upper outer layer (101) and a lower outer layer (102), each of which can be non-woven materials, form the outer surfaces of the body bag (900). An absorbent layer (103) is disposed between the upper outer layer (101) and the lower outer layer (102). One or more edges (303,403,503,603) can be folded into a periphery (332) of the body bag (900). Stitching (802) can then be applied along the periphery (332) such that the stitching (802) passes through the upper outer layer (101), the lower outer layer (102), an upper edge (994) of the fold in the absorbent layer (103), and a complementary bottom edge (995) of the fold in the absorbent layer (103). Handles (1001,1002,1003,1004) can be included as well.

Embodiments are directed to an adjustable universal valve handle.

A removable handle assembly for a cooking vessel a gripping body, a front end of which forms a flared jaw. The flared jaw has projections adapted to clamp the wall of a vessel. The projections are substantially linear in shape in directions that intersect in front of the gripping body. A flared mobile jaw is mounted on the gripping body to rotate about a first axis between a release position and a clamping position. The flared jaw has two projections (504) of substantially linear shape in directions that intersect in front of the gripping body. An actuating lever mounted on the gripping body rotates about a second axis between a deployed position and a retracted position. A mechanism actuated by the actuating lever locks the mobile jaw in the clamping position.

A rotary mechanism includes an accommodating slot structure, a supporting arm, a pivoting portion and a resilient component. The accommodating slot structure is disposed on the bezel. The accommodating slot structure includes a pivot hole structure and an opening structure, respectively formed on the lateral surface and a bottom of the accommodating slot structure. The supporting arm is disposed on the door. The pivoting portion is disposed on the surface of the supporting arm. The pivoting portion is disposed inside the pivot hole structure, so that the supporting arm is rotatably disposed inside the accommodating slot structure. The resilient component is movably accommodated inside the opening structure. A first end of the resilient component is resiliently connected to the lateral surface of the accommodating slot structure. A second end of the resilient component points the surface of the supporting arm, to prevent the pivoting portion from separation.

An electronic device capable of ejecting a peripheral element is disclosed, including a housing, a first wheel and a driving unit. The housing has a chamber, wherein the peripheral element is stored in the chamber. The first wheel is disposed in the housing, wherein the first wheel contacts the peripheral element. The driving unit is disposed in the housing, the driving unit rotates the first wheel, and the first wheel moves the peripheral element from a first position to a second position.

A portable electronic device includes a lower housing and an upper housing slidable relative to the lower housing between closed and open positions. The upper housing includes an auxiliary input device and a display. A primary flex connector electrically connects the lower and upper housings. At least one secondary flex connector may electrically connect the primary flex connector to the auxiliary input device or the display. The upper housing may include a cover plate that is removable to allow access to at least a portion of the flex connectors.

A portable electronic device includes first and second device units and at least one hinge assembly configured to pivotably connect the second device unit to the first device unit. The hinge assembly includes a first fixing unit configured to be fixed to the first device unit, a second fixing unit configured to be fixed to the second device unit, a plurality of shaft members configured to be arranged in parallel with one another and to include first and second outer shaft members respectively mounted on the first and second fixing units and a plurality of inner shaft members arranged between the first and second outer shaft members, and a gear unit mounted on the shaft members to connect the plurality of shaft members with one another through a gear mesh.

A handle has at least one fastening plate or holding part which can be fastened in a through-hole in a thin wall such as a sheet-metal wall by means of snap devices. According to the invention, the fastening plate forms or carries a pivot bearing for the at least one end of a handle, or the like, which is bent, for example, from a round material such as thick wire, this end having a round cross section.

A device is provided to assist the opening of a covering element pivotably mounted relative to an edge of a frame. The device includes an assistance cylinder (6). The assistance cylinder (6) includes a hollow shaft (7), a guide pin (10) inserted in the hollow shaft (7) and comprising at the end thereof opposite the end wall (8) of the hollow shaft (7) a yoke (11), a spring (13) inserted in the hollow shaft (7) surrounding the guide pin (10) and mounted pre-stressed when unloaded between the end wall (4) of the hollow shaft (7) and the yoke (11) of the guide pin (10), and a screw (14) secured to the end of the guide pin (10) and engaging with the end wall (8) of the hollow shaft (7) for keeping the pre-stressed spring (13) in the released state thereof. The invention is useful in the field of road systems.

An electronic device includes first and second bodies. The second body includes a display module and a supporting assembly. The supporting assembly includes a sliding component slidably disposed on the display module and a pivot component pivoted to the first body and the sliding component. When the second body expands from the first body through the rotation of the pivot component relative to the first body, the sliding component and the pivot component are adapted to rotate relative to each other so that a bottom side of the display module moves to a predetermined position on the first body. When the bottom side is located at the predetermined position, the sliding component and the display module are adapted to slide relative to each other so that the display module rotate around the bottom side, so as to change an included angle between the display module and the first body.

An electronic device includes a first body, a supporting arm, at least one first hinge, a first coupling member and at least one second coupling member. The first hinge is connected between the first body and the supporting arm. The supporting arm can rotate relatively to the first body through the first hinge. The first coupling member is disposed in the first body. The second coupling member is disposed in the supporting arm. When the second coupling member moves to at least one predetermined position, the first coupling member and the second coupling member are attracted by each other.

The invention comprises a caster having a yoke having a weight transferring tab and a wheel being rotatably attached to the yoke. The wheel has a groove for receiving the weight transferring tab. The tab transfers the weight of a load applied to the yoke to the groove. The caster includes various accessories, such as various stem, wheel, brake, and axle/hub configurations.

A gear cam mounting device in a dual-hinge device for a portable terminal is provided, in which first and second hinge shafts provide first and second parallel hinge axes, respectively, first and second gear cams are fixed around the first and second hinge shafts, in engagement with each other, and first and second locking units penetrate respectively through the first and second gear cams in a direction that is perpendicular to the first and second hinge axes, for locking the first and second gear cams to surround the first and second hinge shafts.

A lock assembly includes a coupling mechanism connected to a spindle assembly. The coupling mechanism has an outer sleeve having a longitudinal interior opening that extends along a first axis. An operator handle includes a proximal lock core opening, and a distal shaft portion having an axial opening configured to receive the outer sleeve. The distal shaft portion and the outer sleeve are configured to define a through path oriented across the longitudinal interior opening of the outer sleeve. A portion of the through path at the outer sleeve is configured to threadably receive a setscrew to fasten the operator handle to the outer sleeve. A keyed lock core has a tailpiece that is positioned in the longitudinal interior opening of the outer sleeve to obstruct the through path and block access to the setscrew via the through path to prevent unauthorized removal of the operator handle.

A vehicle door locking apparatus is equipped with a movable wedge, a fixed wedge, and an elastic member. The movable wedge is movable in the open/close direction of the vehicle door towards the vehicle body opening. The elastic member impels the movable wedge toward the fixed wedge. A slanted surface on the movable wedge and a slanted surface on the fixed wedge are configured to come into contact when the door is closed. The movable wedge is assembled on the end surface on the vehicle body opening side along with the base plate of a door lock striker that is assembled on the end surface on the vehicle body opening side. The fixed wedge is immovably assembled on the mounting section of the end surface on the vehicle door side, which is involved in a door lock assembly that is assembled on the end surface on the vehicle door side.