The present invention relates to a baler ejection system that may be used with an agricultural harvester, such as a round baler, waste baler, combine, or cotton harvester. More particularly, the bale ejection system uses the motion of two pairs of parallel arms that extend transversely from the sidewalls of a bale chamber at two sets of distinct pivot points. When activated by the operator of the bale ejection system, the two pairs of parallel arms raise simultaneously to expose an outlet through which the bale may be ejected. The bale ejection system is designed to allow a larger outlet for the bale evacuation as compared to existing bale ejection systems that employ circular motion to expose the bale outlet. A formed bale may become ejected by one or more conveyer belts that exert a rearward force on the bale within the bale chamber.

A shield apparatus is mounted on the header of an agricultural implement which includes a rotatable collecting member to direct collected material rearwardly towards a rear discharge opening. The shield apparatus includes a panel member and a mounting bracket assembly which supports the panel member above the rear discharge opening of the header spanning in a lateral direction transversely to the forward working direction such that the panel member extends from a rear edge rearward of the collecting member to a front edge which is spaced forward and upwardly in relation to the rear edge. The shield apparatus ensures that material thrown upwardly above the rear of the header frame is redirected downwardly into the rear discharge opening of the header for collection by the implement in the usual manner. The shield apparatus does not interfere with the visibility of the operator when the panel member is clear.

A suspension system for forage rakes having at least one floating forage rake wheel has a hydraulic cylinder is used for both lift and suspension of the floating forage rake wheel. A hydraulic accumulator provides expansion room for hydraulic fluid to move in and out of the hydraulic cylinder during suspension.

A mower carrying a rotary cutting deck has a height of cut system for adjusting the vertical position of the deck relative to the mower frame for changing or adjusting the height of cut. The height of cut system comprises a pair of parallel cross shafts that carry a plurality of pivotal suspension linkages that connect to the deck, the cross shafts and linkages pivoting jointly with one another and with a pivotal control lever. One of the cross shafts carries a torsion spring to counterbalance the weight of the deck. The control lever is maintained in a plurality of adjusted pivotal positions by a height selection bracket fixed to the frame with the height selection bracket being capable of having its position changed or adjusted relative to the frame by a single adjustment bolt. Each suspension linkage has its effective length adjusted by turning a threaded adjuster carried at the upper end of a connecting rod that is part of each linkage to allow the deck to be leveled relative to a reference plane. The adjustment of the height selection bracket is accomplished without affecting the length adjustments previously made to any of the suspension linkages.

A harvesting machine for threshing crop materials includes a platform supported in front of a chassis, an erecting device having a number pairs of guiding bars attached to the platform and having a channel formed between two bar members of each pair of guiding bars, a guiding element disposed between every two adjacent pairs of guiding bars for guiding a stalk of the crop materials into the channel of the guiding bars, a number of pawls extended into the channel for sending the stalk of the crop materials into the channel, and a cutting device having two or more cutting elements for cutting the stalk into a lower base segment that carries no grain and an upper straw segment that carries grains.

The present invention provides a method for measuring reflective intensity of display surface, including: obtaining a luminance value of a first display and a luminance value of a second display when displaying, the first display and the second display having the same observed luminance, the peripheral of the surface of the first display being surrounded by light-shielding object, the first display and the second display being placed side by side; and obtaining the reflective intensity of the display surface in the ambient based on the luminance value of the first display and the luminance values of the second display when displaying. As such, the present invention provides convenient and accurate means to measure the reflective intensity of display surface.

A mower assembly is provided for cutting around a post. A support structure supports the mower assembly in cantilever fashion. The mower assembly includes a plurality of mower units with each mower unit having a rotary blade. Two or more mower units cooperate to engage and cut around a post and, during the process, the entire mower assembly rotates about an axis enabling the mower units to encircle and efficiently cut grass and other vegetation about the post.

A combine harvester is provided that separates grain material from material other than grain using multiple processing areas, including a harvesting area, a feederhouse area, a threshing area, a cleaning area, and a grain delivery area. In a location at or prior to entering one of the processing areas, the material may be collected and held until a collection threshold is reached. Once it is determined that the collection threshold is reached, the material forming a first group of material may be transported from the location to the processing area or a subsequent processing area. The first group of material is transported from the location to the processing area or the subsequent processing area substantially simultaneously and thus simulates the gathering of a large amount of crop material even when small plots are involved. In this way, reduced cycle times may be achieved, and the efficiency benefits of large-plot harvesting may be extended to small-plot applications.

A harvester having one or more cutting blades for cutting leafy vegetables with a rotating brush for sweeping harvested leaves into a basket or enclosure. The blades are driven by an oscillatory drive mechanism. The brush may have limp bristles. The harvester may be hand-carried and operated by a motor, which drives both the brush and the cutting blades.

A deck lifting and height of cut assembly for a lawn mower, in which the deck lifting assembly includes at least one movable component and the height of cut assembly includes a height adjustment mechanism having a plurality of stop surfaces. A prop extends between the movable component of the deck lifting assembly and a first stop surface of the height adjustment mechanism to prevent the cutting deck assembly from lowering below a first height. The height adjustment mechanism is adjustable to place a second stop surface in engagement with the prop so that the cutting deck assembly is prevented from lowering below a second height different from the first height. The prop may also be used to maintain the cutting deck assembly in the full-up position during travel of the lawn mower between work areas.

A cutter guard for a rotating blade of a lawn mower, particularly for a robotic, self-guided or autonomous lawn mower forms a cutting bowl in which the blade is mounted for rotation about a generally vertical axis. The guard comprises a generally planar guard section surrounded by an arcuate section, transverse edges of which define an opening in the cutter guard, which in operation is pointed to the front of the lawn mower, to allow uncut grass to be accessed by the cutting blades. The arcuate section comprises a plurality of apertures.

A reel lawn mower which has a connection structure for connecting a reel cutting unit to a main body. The reel cutting unit has a spiral cutting reel which is rotated by a prime mover to cut grass together with a bedknife. In the connection structure, in order to connect the reel cutting unit to the main body so that the reel cutting unit rolls around a virtual horizontal line perpendicular to the shaft center of the cutting reel in the center of the axial direction of the cutting reel, the reel cutting unit includes a connecting arm with an arc portion shaped so as to follow a virtual arc centered on the virtual horizontal line. The connecting arm is slidably supported so as to prevent the arc portion from coming off the virtual arc.

A corn header has a row unit frame and an auger sweeping ears of corn toward a center of the corn header. A corn row divider assembly has a snout and gatherer hood hingeably coupled to, and aft of, the snout. An aft end of the gatherer hood is located beneath and to the rear of the fore end of the auger in an operational configuration of the divider assembly. The divider assembly further has a four-point hinge assembly coupling the aft end of the gatherer hood to the row unit frame. The four-point hinge assembly is configured to pivot the gatherer hood between the operational configuration and a non-operational configuration in which the gatherer hood is in a raised condition. The four-point hinge assembly moves the aft end of the gatherer hood forward so that the gatherer hood clears the auger when pivoting to the non-operational configuration.

A windguard mechanism comprising a pair of arms attachable to an agricultural machine and a windguard plate extending between the pair of arms and positioned to hold down crop material processed by a pickup mechanism. The windguard plate comprises a first plate fixed between the pair of arms and a second plate positioned movably with respect to the first plate, wherein working surfaces of the first plate and of the second plate form a windguard working surface of an area independent on the position of the second plate.

A windrow merger includes at least one pickup head member and an internal drive assembly disposed within a longitudinal aperture defined internal to the at least one pickup head member, the drive assembly being for imparting a rotational motion to a plurality of tines by means of a drive shaft operably coupled thereto, the drive shaft extending in opposed directions from the drive assembly. A method of forming the windrow merger is further included.

A rotary implement includes a metallic body that is rotatable around an axis. The metallic body includes a tapered leading edge having an interface surface and an opposite, free surface. The metallic body has a first composition. A metallic layer has a first side surface that is attached to the interface surface and a free, second side surface opposite from the first side surface. The metallic layer has a second, different composition from the first composition. A rotary machine can include an actuator and the rotary implement operably coupled to the actuator. A method for making a rotary implement includes providing the metallic body that has the tapered leading edge having the interface surface and the opposite, free surface. The metallic layer is then attached to the interface surface of the metallic body.

A package includes a device die, which includes a metal pillar at a top surface of the device die, and a solder region on a sidewall of the metal pillar. A molding material encircles the device die, wherein a top surface of the molding material is substantially level with a top surface of the device die. A dielectric layer overlaps the molding material and the device die, with a bottom surface of the dielectric layer contacting a top surface of the device die and a top surface of the molding material. A redistribution line (RDL) extends into the dielectric layer to electrically couple to the metal pillar.

A semiconductor device has a plurality of semiconductor die. A first prefabricated insulating film is disposed over the semiconductor die. A conductive layer is formed over the first prefabricated insulating film. An interconnect structure is formed over the semiconductor die and first prefabricated insulating film. The first prefabricated insulating film is laminated over the semiconductor die. The first prefabricated insulating film includes glass cloth, glass fiber, or glass fillers. The semiconductor die is embedded within the first prefabricated insulating film with the first prefabricated insulating film covering first and side surfaces of the semiconductor die. The interconnect structure is formed over a second surface of the semiconductor die opposite the first surface. A portion of the first prefabricated insulating film is removed after disposing the first prefabricated insulating film over the semiconductor die. A second prefabricated insulating film is disposed over the first prefabricated insulating film.

A semiconductor device includes a first moisture-resistant ring disposed in a peripheral region surrounding a circuit region on a semiconductor substrate in such a way as to surround the circuit region and a second moisture-resistant ring disposed in the peripheral region in such a way as to surround the first moisture-resistant ring.

Presented herein are an interconnect structure and method for forming the same. The interconnect structure includes a contact pad disposed over a substrate and a connector disposed over the substrate and spaced apart from the contact pad. A passivation layer is disposed over the contact pad and over connector, the passivation layer having a contact pad opening, a connector opening, and a mounting pad opening. A post passivation layer including a trace and a mounting pad is disposed over the passivation layer. The trace may be disposed in the contact pad opening and contacting the mounting pad, and further disposed in the connector opening and contacting the connector. The mounting pad may be disposed in the mounting pad opening and contacting the opening. The mounting pad may be separated from the trace by a trace gap, which may optionally be at least 10 μm.

A method for wafer-level packaging includes providing a substrate having a conductive metal pad formed on the surface of the substrate; forming a metal core on the top of the conductive metal pad with the metal core protruding from the surface of the substrate; then, forming an under bump metal layer on the top surface and the side surface of the metal core; and finally, forming a bump structure on the top of the under bump metal layer.

A semiconductor mounting apparatus includes a storing unit that stores a liquid or a gas, a contact unit that comes into contact with a semiconductor chip when the storing unit is filled with the liquid or the gas, and a sucking unit that sucks up the semiconductor chip to bring the semiconductor chip into close contact with the contact unit.

A system for determining thickness variation values of a semiconductor substrate comprises a substrate vacuumed to a pedestal that defines a reference plane for measuring the substrate. A measurement probe assembly determines substrate CTV and BTV values, and defines a substrate slope angle. A thermal bonding assembly attaches a die to the substrate at a bonding angle congruent with the substrate slope angle. A plurality of substrates are measured using the same reference plane on the pedestal. Associated methods and processes are disclosed.

A bump-on-trace (BOT) interconnection in a package and methods of making the BOT interconnection are provided. An embodiment BOT interconnection comprises a landing trace including a distal end, a conductive pillar extending at least to the distal end of the landing trace; and a solder feature electrically coupling the landing trace and the conductive pillar. In an embodiment, the conductive pillar overhangs the end surface of the landing trace. In another embodiment, the landing trace includes one or more recesses for trapping the solder feature after reflow. Therefore, a wetting area available to the solder feature is increased while permitting the bump pitch of the package to remain small.

A method of ultrasonically bonding semiconductor elements includes the steps of: (a) aligning surfaces of a plurality of first conductive structures of a first semiconductor element to respective surfaces of a plurality of second conductive structures of a second semiconductor element; (b) ultrasonically forming tack bonds between ones of the first conductive structures and respective ones of the second conductive structures; and (c) forming completed bonds between the first conductive structures and the second conductive structures.

Package structures and methods are provided to integrate optoelectronic and CMOS devices using SOI semiconductor substrates for photonics applications. For example, a package structure includes an integrated circuit (IC) chip, and an optoelectronics device and interposer mounted to the IC chip. The IC chip includes a SOI substrate having a buried oxide layer, an active silicon layer disposed adjacent to the buried oxide layer, and a BEOL structure formed over the active silicon layer. An optical waveguide structure is patterned from the active silicon layer of the IC chip. The optoelectronics device is mounted on the buried oxide layer in alignment with a portion of the optical waveguide structure to enable direct or adiabatic coupling between the optoelectronics device and the optical waveguide structure. The interposer is bonded to the BEOL structure, and includes at least one substrate having conductive vias and wiring to provide electrical connections to the BEOL structure.

A semiconductor device includes a substrate comprising a trench; a gate dielectric layer formed over a surface of the trench; a gate electrode positioned at a level lower than a top surface of the substrate, and comprising a lower buried portion embedded in a lower portion of the trench over the gate dielectric layer and an upper buried portion positioned over the lower buried portion; and a dielectric work function adjusting liner positioned between the lower buried portion and the gate dielectric layer; and a dipole formed between the dielectric work function adjusting liner and the gate dielectric layer.

A method for forming a V-NAND device is disclosed. Specifically, the method involves deposition of at least one of semiconductive material, conductive material, or dielectric material to form a channel for the V-NAND device. In addition, the method may involve a pretreatment step where ALD, CVD, or other cyclical deposition processes may be used to improve adhesion of the material in the channel.

A method of forming a ferroelectric memory cell. The method comprises forming an electrode material exhibiting a desired dominant crystallographic orientation. A hafnium-based material is formed over the electrode material and the hafnium-based material is crystallized to induce formation of a ferroelectric material having a desired crystallographic orientation. Additional methods are also described, as are semiconductor device structures including the ferroelectric material.

Embodiments of the inventive concepts provide a method for manufacturing a semiconductor device. The method includes forming a stack structure including insulating layers and sacrificial layers which are alternately and repeatedly stacked on a substrate. A first photoresist pattern is formed on the stack structure. A first part of the stack structure is etched to form a stepwise structure using the first photoresist pattern as an etch mask. The first photoresist pattern includes a copolymer including a plurality of units represented by at least one of the following chemical formulas 1 to 3, wherein “R1”, “R2”, “R3”, “p”, “q” and “r” are the same as defined in the description.

A method of manufacturing a semiconductor device according to one embodiment includes forming a first film including a first metal above a processing target member. The method includes forming a second film including two or more types of element out of a second metal, carbon, and boron above the first film. The method includes forming a third film including the first metal above the second film. The method includes forming a mask film by providing an opening part to a stacked film including the first film, the second film and the third film. The method includes processing the processing target member by performing etching using the mask film as a mask.

Embodiments of the inventive concept provide a method for manufacturing a semiconductor device. The method includes forming a stack structure by alternately and repeatedly stacking insulating layers and sacrificial layers on a substrate, sequentially forming a first lower layer and a first photoresist pattern on the stack structure, etching the first lower layer using the first photoresist pattern as an etch mask to form a first lower pattern. A first part of the stack structure is etched to form a stepwise structure using the first lower pattern as an etch mask. The first lower layer includes a novolac-based organic polymer, and the first photoresist pattern includes a polymer including silicon.

The present invention provides a method for manufacturing the N-type TFT, which includes subjecting a light shielding layer to a grating like patternization treatment for controlling different zones of a poly-silicon layer to induce difference of crystallization so as to have different zones of the poly-silicon layer forming crystalline grains having different sizes, whereby through just one operation of ion doping, different zones of the poly-silicon layer have differences in electrical resistivity due to difference of grain size generated under the condition of identical doping concentration to provide an effect equivalent to an LDD structure for providing the TFT with a relatively low leakage current and improved reliability. Further, since only one operation of ion injection is involved, the manufacturing time and manufacturing cost can be saved, damages of the poly-silicon layer can be reduced, the activation time can be shortened, thereby facilitating the manufacture of flexible display devices.

A method of forming image sensor packages may include performing a molding process. Mold material may be formed either on a transparent substrate in between image sensor dies, or on a removable panel in between transparent substrates attached to image sensor dies. Redistribution layers may be formed before or after the molding process. Mold material may be formed after forming redistribution layers so that the mold material covers the redistribution layers. In these cases, holes may be formed in the mold material to expose solder pads on the redistribution layers. Alternatively, redistribution layers may be formed after the molding process and the redistribution layers may extend over the mold material. Image sensor dies may be attached to a glass or notched glass substrate with dam structures. The methods of forming image sensor packages may result in hermetic image sensor packages that prevent exterior materials from reaching the image sensor.

A first photoresist pattern and a second photoresist pattern are formed over a substrate. The first photoresist pattern is separated from the second photoresist pattern by a gap. A chemical mixture is coated on the first and second photoresist patterns. The chemical mixture contains a chemical material and surfactant particles mixed into the chemical material. The chemical mixture fills the gap. A baking process is performed on the first and second photoresist patterns, the baking process causing the gap to shrink. At least some surfactant particles are disposed at sidewall boundaries of the gap. A developing process is performed on the first and second photoresist patterns. The developing process removes the chemical mixture in the gap and over the photoresist patterns. The surfactant particles disposed at sidewall boundaries of the gap reduce a capillary effect during the developing process.

A method of forming a semiconductor device is provided such that a trench is formed in a semiconductor body at a first surface of the semiconductor body. Dopants are introduced into a first region at a bottom side of the trench by ion implantation. A filling material is formed in the trench. Dopants are introduced into a second region at a top side of the filling material. Thermal processing of the semiconductor body is carried out and is configured to intermix dopants from the first and the second regions by a diffusion process along a vertical direction perpendicular to the first surface.

A method of fabricating a semiconductor device includes forming a gate strip including a dummy electrode and a TiN layer. The method includes removing a first portion of the dummy electrode to form a first opening over a P-active region and an isolation region. The method includes performing an oxygen-containing plasma treatment on a first portion of the TiN layer; and filling the first opening with a first metal material. The method includes removing a second portion of the dummy electrode to form a second opening over an N-active region and the isolation region. The method includes performing a nitrogen-containing plasma treatment on a second portion of the TiN layer; and filling the second opening with a second metal material. The second portion of the TiN layer connects to the first portion of the TiN layer over the isolation region.

A method for manufacturing an LDMOS device includes: providing a semiconductor substrate (200), forming a drift region (201) in the semiconductor substrate (200), forming a gate material layer on the semiconductor substrate (200), and forming a negative photoresist layer (204) on the gate material layer; patterning the negative photoresist layer (204), and etching the gate material layer by using the patterned negative photoresist layer (204) as a mask so as to form a gate (203); forming a photoresist layer having an opening on the semiconductor substrate (200) and the patterned negative photoresist layer (204), the opening corresponding to a predetermined position for forming a body region (206); and injecting the body region (206) by using the gate (203) and the negative photoresist layer (204) located above the gate (203) as a self-alignment layer, so as to form a channel region.

The on-state characteristics of a transistor are improved and thus, a semiconductor device capable of high-speed response and high-speed operation is provided. A highly reliable semiconductor device showing stable electric characteristics is made. The semiconductor device includes a transistor including a first oxide layer; an oxide semiconductor layer over the first oxide layer; a source electrode layer and a drain electrode layer in contact with the oxide semiconductor layer; a second oxide layer over the oxide semiconductor layer; a gate insulating layer over the second oxide layer; and a gate electrode layer over the gate insulating layer. An end portion of the second oxide layer and an end portion of the gate insulating layer overlap with the source electrode layer and the drain electrode layer.

A semiconductor structure is disclosed. The semiconductor structure includes a source trench in a drift region, the source trench having a source trench dielectric liner and a source trench conductive filler surrounded by the source trench dielectric liner, a source region in a body region over the drift region. The semiconductor structure also includes a patterned source trench dielectric cap forming an insulated portion and an exposed portion of the source trench conductive filler, and a source contact layer coupling the source region to the exposed portion of the source trench conductive filler, the insulated portion of the source trench conductive filler increasing resistance between the source contact layer and the source trench conductive filler under the patterned source trench dielectric cap. The source trench is a serpentine source trench having a plurality of parallel portions connected by a plurality of curved portions.

A semiconductor device includes a substrate comprising a channel region and a recess, wherein the recess is located at both side of the channel region; a gate structure formed over the channel region; a first SiP layer covering bottom corners of the gate structure and the recess; and a second SiP layer formed over the first SiP layer and in the recess, wherein the second SiP layer has a phosphorus concentration higher than that of the first SiP layer.

Provided is a method for fabricating an electronic device, the method including: preparing a carrier substrate including an element region and a wiring region; forming a sacrificial layer on the carrier substrate; forming an electronic element on the sacrificial layer of the element region; forming a first elastic layer having a corrugated surface on the first elastic layer of the wiring region; forming a metal wirings electrically connecting the electronic element thereto, on the first elastic layer of the wiring region; forming a second elastic layer covering the metal wirings, on the first elastic layer; forming a high rigidity pattern filling in a recess of the second elastic layer above the electronic element so as to overlap the electronic element, and having a corrugated surface; forming a third elastic layer on the second elastic layer and the high rigidity pattern; and separating the carrier substrate.

A magnetoresistive random access memory (MRAM) structure includes a bottom electrode structure. A magnetic tunnel junction (MTJ) element is over the bottom electrode structure. The MTJ element includes an anti-ferromagnetic material layer. A ferromagnetic pinned layer is over the anti-ferromagnetic material layer. A tunneling layer is over the ferromagnetic pinned layer. A ferromagnetic free layer is over the tunneling layer. The ferromagnetic free layer has a first portion and a demagnetized second portion. The MRAM also includes a top electrode structure over the first portion.

The invention relates to encapsulation structures for OLED displays, wherein the structure provides sufficient barrier properties against oxygen and moisture as well as anti-reflection properties. The structure includes a layer comprising a photo-aligned substance which in a synergistic manner controls both barrier and anti-reflection properties.

An array substrate of organic light-emitting diodes and a method for fabricating the same are provided to narrow an edge frame of product device of organic light-emitting diodes, to shorten the package process time, and to improve the substrate utilization and the production efficiency. The array substrate of organic light-emitting diodes includes a plurality of display panels disposed in an array of rows and columns, wherein at least two adjacent display panels are connected through a frame adhesive, and there is no cutting headroom between at least one side of the at least two adjacent display panels.

One embodiment is a wide stripe semiconductor waveguide, which is cleaved at a Talbot length thereof, the wide stripe semiconductor waveguide having facets with mirror coatings. A system provides for selective pumping the wide stripe semiconductor waveguide to create and support a Talbot mode. In embodiments according to the present method and apparatus the gain is patterned so that a single unique pattern actually has the highest gain and hence it is the distribution that oscillates.

An apparatus and method for carrying and storing a portion of rope is claimed. A portion of rope is braided and wound about two complementary loops. Attached to one complementary loop is a flexible fastener. The flexible fastener can be passed through the second complementary loop and attached to itself. The apparatus can then be worn as a bracelet. When the rope is needed, the person can unwind the rope. After using the rope, the rope can be rewound and then bound with the flexible fastener.

Flexible retaining structures for body jewelry and method for their use.

A copper-zinc alloy product of the invention contains zinc in an amount of higher than 35% by weight and 43% by weight or less and has a two-phase structure of an α-phase and a β-phase. Further, the ratio of the β-phase in the copper-zinc alloy is controlled to be higher than 10% and less than 40% and the crystal grains of the α-phase and the β-phase are crushed into a flat shape and arranged in a layer shape through cold working. According to the copper-zinc alloy product, it is possible to decrease the copper content and to appropriately secure the strength and cold workability by appropriately controlling the ratio of the β-phase.

A wire gripping assembly for securing an electrical box or light fixture to a support. The wire gripping assembly includes a wire gripping device having a body with open channels and a through bore, a clip member having legs for sliding engagement within the channels, a cable having an end connector thereon, and a thumbscrew for adjusting the clip member with respect to the body. The thumbscrew includes a head having an outer circumference with serrations to enable hand tightening and an end with a slot for engagement by a screwdriver or similar tool. The wire gripping assembly eases installation of an electrical device to an overhead support by enabling a two-step connection including initial hand tightening using the serrated outer surface of the thumbscrew and subsequent secure tightening by engaging the slot of the thumbscrew with a screwdriver or similar tool.