Embodiments of the inventive concept provide a method for manufacturing a semiconductor device. The method includes forming a stack structure by alternately and repeatedly stacking insulating layers and sacrificial layers on a substrate, sequentially forming a first lower layer and a first photoresist pattern on the stack structure, etching the first lower layer using the first photoresist pattern as an etch mask to form a first lower pattern. A first part of the stack structure is etched to form a stepwise structure using the first lower pattern as an etch mask. The first lower layer includes a novolac-based organic polymer, and the first photoresist pattern includes a polymer including silicon.

The present invention provides a method for manufacturing the N-type TFT, which includes subjecting a light shielding layer to a grating like patternization treatment for controlling different zones of a poly-silicon layer to induce difference of crystallization so as to have different zones of the poly-silicon layer forming crystalline grains having different sizes, whereby through just one operation of ion doping, different zones of the poly-silicon layer have differences in electrical resistivity due to difference of grain size generated under the condition of identical doping concentration to provide an effect equivalent to an LDD structure for providing the TFT with a relatively low leakage current and improved reliability. Further, since only one operation of ion injection is involved, the manufacturing time and manufacturing cost can be saved, damages of the poly-silicon layer can be reduced, the activation time can be shortened, thereby facilitating the manufacture of flexible display devices.

A method of manufacturing a thin film transistor is disclosed. The method of manufacturing the thin film transistor includes: manufacturing a substrate; forming an oxide semiconductor layer on the substrate; forming a pattern including an active layer through a patterning process; forming a source and drain metal layer on the active layer; and forming a pattern including a source electrode and a drain electrode through a patterning process, an opening being formed between the source electrode and the drain electrode at a position corresponding to a region of the active layer used as a channel, wherein the step of forming the pattern including the source electrode and the drain electrode through a patterning process includes: removing a portion of the source and drain metal layer corresponding to the position of the opening through dry etching. The method may also be used to manufacturing a thin film transistor.

A method of forming image sensor packages may include performing a molding process. Mold material may be formed either on a transparent substrate in between image sensor dies, or on a removable panel in between transparent substrates attached to image sensor dies. Redistribution layers may be formed before or after the molding process. Mold material may be formed after forming redistribution layers so that the mold material covers the redistribution layers. In these cases, holes may be formed in the mold material to expose solder pads on the redistribution layers. Alternatively, redistribution layers may be formed after the molding process and the redistribution layers may extend over the mold material. Image sensor dies may be attached to a glass or notched glass substrate with dam structures. The methods of forming image sensor packages may result in hermetic image sensor packages that prevent exterior materials from reaching the image sensor.

A first photoresist pattern and a second photoresist pattern are formed over a substrate. The first photoresist pattern is separated from the second photoresist pattern by a gap. A chemical mixture is coated on the first and second photoresist patterns. The chemical mixture contains a chemical material and surfactant particles mixed into the chemical material. The chemical mixture fills the gap. A baking process is performed on the first and second photoresist patterns, the baking process causing the gap to shrink. At least some surfactant particles are disposed at sidewall boundaries of the gap. A developing process is performed on the first and second photoresist patterns. The developing process removes the chemical mixture in the gap and over the photoresist patterns. The surfactant particles disposed at sidewall boundaries of the gap reduce a capillary effect during the developing process.

A TFT and manufacturing method thereof, an array substrate and manufacturing method thereof, an X-ray detector and a display device are disclosed. The manufacturing method includes: forming a gate-insulating-layer thin film (3'), a semiconductor-layer thin film (4') and a passivation-shielding-layer thin film (5') successively; forming a pattern (5') that includes a passivation shielding layer through one patterning process, so that a portion, sheltered by the passivation shielding layer, of the semiconductor-layer thin film forms a pattern of an active layer (4a'); and performing an ion doping process to a portion, not sheltered by the passivation shielding layer, of the semiconductor-layer thin film to form a pattern comprising a source electrode (4c') and a drain electrode (4b'). The source electrode (4c') and the drain electrode (4b') are disposed on two sides of the active layer (4a') respectively and in a same layer as the active layer (4a'). The manufacturing method can reduce the number of patterning processes and improve the performance of the thin film transistor in the array substrate.

Manufacturing methods of JFET-type compact three-dimensional memory (3D-MC) are disclosed. In a memory level stacked above the substrate, an x-line extends from a memory array to an above-substrate decoding stage. A JFET-type transistor is formed on the x-line as a decoding device for the above-substrate decoding stage, where the overlap portion of the x-line with the control-line (c-line) is semi-conductive.

A method of forming a semiconductor device is provided such that a trench is formed in a semiconductor body at a first surface of the semiconductor body. Dopants are introduced into a first region at a bottom side of the trench by ion implantation. A filling material is formed in the trench. Dopants are introduced into a second region at a top side of the filling material. Thermal processing of the semiconductor body is carried out and is configured to intermix dopants from the first and the second regions by a diffusion process along a vertical direction perpendicular to the first surface.

To provide a semiconductor device having improved reliability. After formation of an n+ type semiconductor region for source/drain, a first insulating film is formed on a semiconductor substrate so as to cover a gate electrode and a sidewall spacer. After heat treatment, a second insulating film is formed on the first insulating film and a resist pattern is formed on the second insulating film. Then, these insulating films are etched with the resist pattern as an etching mask. The resist pattern is removed, followed by wet washing treatment. A metal silicide layer is then formed by the salicide process.

A method of fabricating a semiconductor device includes forming a gate strip including a dummy electrode and a TiN layer. The method includes removing a first portion of the dummy electrode to form a first opening over a P-active region and an isolation region. The method includes performing an oxygen-containing plasma treatment on a first portion of the TiN layer; and filling the first opening with a first metal material. The method includes removing a second portion of the dummy electrode to form a second opening over an N-active region and the isolation region. The method includes performing a nitrogen-containing plasma treatment on a second portion of the TiN layer; and filling the second opening with a second metal material. The second portion of the TiN layer connects to the first portion of the TiN layer over the isolation region.

A method for forming a semiconductor structure includes forming a strained silicon germanium layer on top of a substrate. At least one patterned hard mask layer is formed on and in contact with at least a first portion of the strained silicon germanium layer. At least a first exposed portion and a second exposed portion of the strained silicon germanium layer are oxidized. The oxidizing process forms a first oxide region and a second oxide region within the first and second exposed portions, respectively, of the strained silicon germanium.

A method for manufacturing an LDMOS device includes: providing a semiconductor substrate (200), forming a drift region (201) in the semiconductor substrate (200), forming a gate material layer on the semiconductor substrate (200), and forming a negative photoresist layer (204) on the gate material layer; patterning the negative photoresist layer (204), and etching the gate material layer by using the patterned negative photoresist layer (204) as a mask so as to form a gate (203); forming a photoresist layer having an opening on the semiconductor substrate (200) and the patterned negative photoresist layer (204), the opening corresponding to a predetermined position for forming a body region (206); and injecting the body region (206) by using the gate (203) and the negative photoresist layer (204) located above the gate (203) as a self-alignment layer, so as to form a channel region.

The on-state characteristics of a transistor are improved and thus, a semiconductor device capable of high-speed response and high-speed operation is provided. A highly reliable semiconductor device showing stable electric characteristics is made. The semiconductor device includes a transistor including a first oxide layer; an oxide semiconductor layer over the first oxide layer; a source electrode layer and a drain electrode layer in contact with the oxide semiconductor layer; a second oxide layer over the oxide semiconductor layer; a gate insulating layer over the second oxide layer; and a gate electrode layer over the gate insulating layer. An end portion of the second oxide layer and an end portion of the gate insulating layer overlap with the source electrode layer and the drain electrode layer.

A semiconductor structure is disclosed. The semiconductor structure includes a source trench in a drift region, the source trench having a source trench dielectric liner and a source trench conductive filler surrounded by the source trench dielectric liner, a source region in a body region over the drift region. The semiconductor structure also includes a patterned source trench dielectric cap forming an insulated portion and an exposed portion of the source trench conductive filler, and a source contact layer coupling the source region to the exposed portion of the source trench conductive filler, the insulated portion of the source trench conductive filler increasing resistance between the source contact layer and the source trench conductive filler under the patterned source trench dielectric cap. The source trench is a serpentine source trench having a plurality of parallel portions connected by a plurality of curved portions.

A method for producing an integrated power transistor circuit includes forming at least one transistor cell in a cell array, each transistor cell having a doped region formed in a semiconductor substrate and adjoining a first surface of the semiconductor substrate on a first side of the semiconductor substrate, depositing a contact layer on the first side, structuring the contact layer to form a contact structure from the contact layer, the contact structure having, in a projection of the cell array orthogonal to the first surface, a first section and, outside the cell array, a second section which connects the first section to an interface structure, and forming an electrode structure on and in direct contact with the first section in the orthogonal projection of the cell array, the electrode structure being absent outside the cell array.

A semiconductor device includes a substrate comprising a channel region and a recess, wherein the recess is located at both side of the channel region; a gate structure formed over the channel region; a first SiP layer covering bottom corners of the gate structure and the recess; and a second SiP layer formed over the first SiP layer and in the recess, wherein the second SiP layer has a phosphorus concentration higher than that of the first SiP layer.

A method of production of a semiconductor device comprising a semiconductor layer forming step of forming a semiconductor layer including an inorganic oxide semiconductor on a board, a passivation film forming step of forming a passivation film comprising an organic material so as to cover the semiconductor layer, a baking step of baking the passivation film, and a cooling step of cooling the passivation film after baking, herein, in the cooling step, a cooling speed from a baking temperature at the time of baking in the baking step to a temperature 50° C. lower than the baking temperature is substantially controlled to 0.5 to 5° C./min in range is provided.

Provided is a method for fabricating an electronic device, the method including: preparing a carrier substrate including an element region and a wiring region; forming a sacrificial layer on the carrier substrate; forming an electronic element on the sacrificial layer of the element region; forming a first elastic layer having a corrugated surface on the first elastic layer of the wiring region; forming a metal wirings electrically connecting the electronic element thereto, on the first elastic layer of the wiring region; forming a second elastic layer covering the metal wirings, on the first elastic layer; forming a high rigidity pattern filling in a recess of the second elastic layer above the electronic element so as to overlap the electronic element, and having a corrugated surface; forming a third elastic layer on the second elastic layer and the high rigidity pattern; and separating the carrier substrate.

A method is provided for making smooth crystalline semiconductor thin-films and hole and electron transport films for solar cells and other electronic devices. Such semiconductor films have an average roughness of 3.4 nm thus allowing for effective deposition of additional semiconductor film layers such as perovskites for tandem solar cell structures which require extremely smooth surfaces for high quality device fabrication.

A magnetoresistive random access memory (MRAM) structure includes a bottom electrode structure. A magnetic tunnel junction (MTJ) element is over the bottom electrode structure. The MTJ element includes an anti-ferromagnetic material layer. A ferromagnetic pinned layer is over the anti-ferromagnetic material layer. A tunneling layer is over the ferromagnetic pinned layer. A ferromagnetic free layer is over the tunneling layer. The ferromagnetic free layer has a first portion and a demagnetized second portion. The MRAM also includes a top electrode structure over the first portion.

An organic layer deposition assembly for depositing a deposition material on a substrate includes a deposition source configured to spray the deposition material, a deposition source nozzle arranged in one side of the deposition source and including deposition source nozzles arranged in a first direction, a patterning slit sheet arranged to face the deposition source nozzle and having patterning slits in a second direction that crosses the first direction, and a correction sheet arranged between the deposition source nozzle and the patterning slit sheet and configured to block at least a part of the deposition material sprayed from the deposition source.

An array substrate of organic light-emitting diodes and a method for fabricating the same are provided to narrow an edge frame of product device of organic light-emitting diodes, to shorten the package process time, and to improve the substrate utilization and the production efficiency. The array substrate of organic light-emitting diodes includes a plurality of display panels disposed in an array of rows and columns, wherein at least two adjacent display panels are connected through a frame adhesive, and there is no cutting headroom between at least one side of the at least two adjacent display panels.

One embodiment is a wide stripe semiconductor waveguide, which is cleaved at a Talbot length thereof, the wide stripe semiconductor waveguide having facets with mirror coatings. A system provides for selective pumping the wide stripe semiconductor waveguide to create and support a Talbot mode. In embodiments according to the present method and apparatus the gain is patterned so that a single unique pattern actually has the highest gain and hence it is the distribution that oscillates.

A tensioning device comprises an elongate member, preferably a band, and a frame having first and second sides. The band has a first end that is attachable to the first side of the frame and a second end that is releasably securable to the second side of the frame. A movable clamping member on the frame secures the second end of the band to the second side of the frame by cinching the second end of the band between an engagement surface on the band and a mating engagement surface on the second side of the frame. A restraining member is provided for restraining the clamping member to a first position spaced from the mating locking surface on the second side of the frame, when the restraining member is in a restraining orientation. The restraining member is movable out of the restraining orientation after the band is tensioned to a predetermined level using the second end. The band is tensioned to the aforementioned predetermined level and is secured to the second side of the frame, so that the band establishes a path of tension along its length that extends linearly between the two ends of the band.

An apparatus and method for carrying and storing a portion of rope is claimed. A portion of rope is braided and wound about two complementary loops. Attached to one complementary loop is a flexible fastener. The flexible fastener can be passed through the second complementary loop and attached to itself. The apparatus can then be worn as a bracelet. When the rope is needed, the person can unwind the rope. After using the rope, the rope can be rewound and then bound with the flexible fastener.

A mountable cable tie with fine adjustment with an elongated strap having a first strap end and a second strap end, the elongated strap having one or more rows of teeth or cross-bars formed crosswise on the elongated strap, and a plurality of holes positioned linear along the median between the one or more rows of teeth, at least one locking buckle positioned proximate the second strap end, the at least one locking buckle having at least one channel and at least one locking tang or pawl positioned within the locking buckle, wherein increased insertion of the first strap end into the locking head decreases the size of the loop of the elongated strap to secure the bundle.

Substrates such as sheet metal components may be kept spaced apart from each other using a molded polymeric spacing device. The spacing device has a main body with a thickness corresponding to the desired minimum spacing between the substrates and, extending from the main body or a base connected to said main body, an attachment member capable of being inserted into an opening in one of the substrates, but resistant to being easily withdrawn from such opening. Noise and vibration that might otherwise be generated or propagated by closely proximate substrates are reduced through the use of such molded polymeric spacing devices, which may be integrally fashioned from a rubber.

A watch comprising a watch case with opposite arranged connecting parts in form of two parallel branches for the mounting of a watch strap or cord between said branches, where said watch further comprises at least one generally T-shaped strap or cord connector comprising a spring loaded sliding bar suited for engaging in holes provided in a surface of each branch facing each other, said T-shaped strap or cord connector further comprises a cord receiving opening being arranged opposite to the spring loaded sliding bar and being an opening adapted to receive a cord having generally round or polygonal cross section, said cord at a first end and a second end being provided with interacting locking parts.

A fastening strap and a manufacturing method thereof are provided. The fastening strap includes a first band and a second band. The first band has a first surface and a second surface. The first surface has a plurality of hooks of special configuration. The second band has a third surface and a fourth surface. The third surface is directly adhered to the second surface of the first band, and the fourth surface has a plurality of loops for being mechanically latched by the hooks on the first surface. The second surface and/or the third surface is printed with at least one pattern. After the first band and the second band are adhered together, the pattern can be seen from the first surface of the first band.

Embodiments of a loop clip used with a golf bag and methods to manufacture a golf bag are generally described herein. Other embodiments of the loop clip may be described and claimed.

A fixing buckle assembly for use as part of a motor vehicle seatbelt restraint system of a type having webbing for positioning on an occupant and a lap pretensioner for pretensioning the seatbelt restraint system. The buckle assembly includes a tongue, preferably affixed to a pyrotechnic lap pretensioner (PLP). The buckle assembly includes a buckle plate featuring an aperture for connection to a loop of the webbing. A cover assembly encases the internal components of the buckle assembly and is formed of two cover halves which are preferably injection molded and snap together in a clam-shell construction. Each of the cover halves have sections which circumscribe a tongue passageway such that after they are assembled and the tongue is inserted in the buckle assembly, the cover halves become interlocked together. At the opposite end of the buckle assembly, the cover halves each include a section extending from the aperture which is retained from separation by being enclosed by the webbing loop. These features prevent separation of the housing halves upon activation of the PLP.

An exemplary device that is useful for controlling vibrations of an elevator load bearing member includes a guide. A mass is moveable relative to the guide responsive to vibration of the load bearing member to introduce a force to counter the vibration.

An improved cemetery experience whereby the cemetery and accompanying facilities may celebrate and demonstrate the passion and hobbies of the deceased individual. The contemplated themed cemetery may be a stand-alone cemetery that celebrates a common passion of a plurality of individuals, yet still maintains the traditional burial and memorialization process. The themed cemetery may take a specific event, or commonly understood and loved location and memorialize that location in the theme of a cemetery where those with that common interest and enjoyment of the commonly understood location may desire to be buried. The cemetery would closely resemble both visually, and physically a replica of the theme being celebrated and may provide space for the deceased while still providing adequate income and revenue in the way of advertising for the operator.

A memorial product is presently disclosed that includes a glass structure having a first helix of cremation remains and a second helix of a second material, wherein the helix of the cremation remains and the helix of the second material are intertwined to form a double helix in the glass structure. In some embodiments, the second material is additional cremation remains or a colored material selected to correspond to the deceased represented by the cremation remains. Also disclosed is a method of manufacturing a memorial product including forming a first portion of molten glass into a substantially cylindrical shape having an exterior surface, applying cremation remains on a first portion of the exterior surface, applying a second material on a second portion of the exterior surface, and gathering a second portion of molten glass over the first portion of molten glass to encase the cremation remains and the second material.

A method is used to prepare a body for burial. The method includes placing the body inside a vessel. The body includes bones and tissue. The method further includes subjecting the body to a flow of steam until the bones are free of tissue. In one implementation, the flow of steam has a temperature of about 212 degrees Fahrenheit and a mass flow rate of at least 1000 pounds per hour. The method may further include removing the bones from the vessel.

The present invention concerns processes for reducing water in never-dried fiber comprising copolymer derived from the copolymerization of para-phenylenediamine, 5(6)-amino-2-(p-aminophenyl)benzimidazole; and terephthaloyl dichloride, the process having the following steps in a continuous process, (a) a step of drying a never-dried fiber having at least 0.1% sulfur at less than 150° C. until the moisture content of the fiber is less than 60 weight percent; and (b) a step of further drying the fiber above 150° C. while the moisture content of the fiber is no more than 60 weight percent; and the fiber being further heated to at least 350° C. in either an additional continuous or separate step.

A method of forming a sheet metal casket comprises providing a sheet metal casket shell having at least a portion of an end wall and at least a portion of a side wall and a round corner between the portion of the end wall and the portion of the side wall, and forming a generally planar corner oriented at about a 45° angle relative to the portion of the end wall and the portion of the side wall.

An apparatus including a mounting platform, wherein the mounting platform includes a substantially planar mounting surface; a clamping mechanism on the mounting surface; a memorial item retained by the clamping mechanism; and an arrangement of handles on a side of the mounting platform, wherein the side is substantially normal to the plane of the mounting surface.

An apparatus for preserving human or animal remains comprising a burial chamber further comprising a hermetically sealed interior containing gas or water vapor, wherein the gas creates a gas pressure within the hermetically sealed interior, and a vacuum pump, wherein the vacuum pump is in functional communication with the hermetically sealed interior, wherein the vacuum pump operates to evacuate the gas or the water vapor from the hermetically sealed interior, and wherein the vacuum pump is intermittently activated to reduce the gas pressure within the hermetically sealed interior for a desiccating duration.

A decorative memorial serves to display a sealed, visible portion of cremation ashes.

A casket comprises a casket shell adapted to receive the remains of a deceased having a pair of side walls, a pair of end walls, and a bottom wall, and a casket cap closable on the casket shell. A dish assembly is mounted to an underside of the cap. The dish assembly includes a cap panel comprising a sheet of magnetic material. At least one medallion having text and/or graphics representing a life aspect of the deceased is removably mounted on the cap panel. The medallion comprises a medallion blank having at least one magnet on a rear side thereof and having a recess on a front side thereof, a two-dimensional image positioned in the recess of the medallion blank, and a transparent layer of material overlying the two-dimensional image. The transparent layer of material is dome-shaped in cross section such that a peripheral outer edge of the layer is thinner than a central portion of the layer. The magnet removably secures the medallion blank to the magnetic material of the cap panel.

A modular casket made of lightweight materials is structurally reinforced using a structural sealant along at least the inner surfaces of the side panels, and optionally along at least side edge portions of a base panel to which the side panels are coupled, to stiffen and rigidize the casket against flexion along longitudinal and lateral axes, as well as torsional flexion. The structurally reinforced casket is sealed or more readily sealed against leakage and provides other benefits of structural stiffness and rigidity with relatively small cost and weight penalties.

A funerary article for the identification and perpetuation of the memory of a deceased individual in a timeless manner, made of unalterable material, includes: a marked element (1) with a unique code that is assigned to the deceased individual, and on a pair of plates (3, 4) held together by an attachment member, both being marked with the unique code, the second plate including data for identification of the deceased individual in natural language to constitute a device for identification and remembrance. The marked element (1) is available when the Funeral Services take charge of the deceased, whereas the plates (3, 4) are produced following the burial or the cremation and are then to be attached together to definitively form the article for remembrance and identification of the deceased. A kit and a process for the production of this funerary article for identification and remembrance are also described.

A method of forming a portion of a sheet metal casket shell comprises supporting a piece of sheet metal on one side with a female die having a center die portion and opposite end die portions configured to pivot relative to the center die portion, supporting the piece of sheet metal on the opposite side with a male die having a center die portion and opposite end die portions, and pivoting the end die portions of the female die relative to the center die portion of the female die to cause the opposite ends of the piece of sheet metal to fold around the end die portions of the male die. The method can be repeated with a second piece of sheet metal thereby forming two shell halves which can be welded together to form the shell.

A containment device for holding the remains of a cremated individual. The containment device may include a receptacle with a rim section and a containment section. A cap may be sealed on the receptacle once the remains of the cremated individual are within the containment section. The outside of the receptacle may include an attachment component. Therefore, the receptacle may be displayed in one's home for a time and then may be permanently mounted in a memorial site. An anchor may attach to the attachment component to prevent theft.

A funerary urn includes a receptacle (1) that has an opening (4) that is equipped with a removable sealing partition (11) for introducing ashes. The urn is equipped with side walls (3), a lower wall (2), and an upper wall (5), with one of the walls being removable in order to open and close the urn, the urn also including first and second inside compartments (6, 7) that each has an access element that is independent of the other and separate from the opening (4) for introducing ashes. The first compartment is equipped with a window (8) toward the outside, and the second compartment is completely concealed. The urn is designed for the perpetuation of memory because it makes it possible to preserve an emotional and material trace of the deceased individual thanks to independent compartments of the receptacle receiving the ashes.

A concrete burial vault system having a layered construction of castable material encased in an inner liner and an outer casing of a thermoplastic polymer such as polypropylene utilizes the liner and casing as a mold for the concrete and enables monolithic molds with self-supporting securing tabs. This system allows the liner and casing to be manufactured at a central location and then transported to a plurality of use locations to be filled with concrete. The manufacturing method supports the system and provides an assembly advantage.

A decorative carapace for a burial vault including a carapace having a top surface and a substrate having a decorative graphic, the substrate being attached to the top surface of the carapace.

A hanging memorial for displaying pictures and ashes of the deceased, and storing keepsakes. The hanging memorial includes a frame and an urn; the urn being integrated into the frame. A lateral wall and a front panel of the frame define a storage volume in which keepsakes can be placed. Alternatively an internal storage box can define the storage volume. The frame further includes a frame insert that can be configured to display a physical painting or photograph, or configured to display digital pictures. The urn is removably attached or pivotally connected to the frame by an at least one bracket, such that the contents of the urn are readily accessible. The hanging memorial may further include a niche about which the at least one bracket is positioned and into which the urn is positioned. Alternative support mechanism may also be used in place of the at least one bracket.