A semiconductor device includes a substrate comprising a trench; a gate dielectric layer formed over a surface of the trench; a gate electrode positioned at a level lower than a top surface of the substrate, and comprising a lower buried portion embedded in a lower portion of the trench over the gate dielectric layer and an upper buried portion positioned over the lower buried portion; and a dielectric work function adjusting liner positioned between the lower buried portion and the gate dielectric layer; and a dipole formed between the dielectric work function adjusting liner and the gate dielectric layer.

A method for forming a V-NAND device is disclosed. Specifically, the method involves deposition of at least one of semiconductive material, conductive material, or dielectric material to form a channel for the V-NAND device. In addition, the method may involve a pretreatment step where ALD, CVD, or other cyclical deposition processes may be used to improve adhesion of the material in the channel.

A method of forming a ferroelectric memory cell. The method comprises forming an electrode material exhibiting a desired dominant crystallographic orientation. A hafnium-based material is formed over the electrode material and the hafnium-based material is crystallized to induce formation of a ferroelectric material having a desired crystallographic orientation. Additional methods are also described, as are semiconductor device structures including the ferroelectric material.

Embodiments of the inventive concepts provide a method for manufacturing a semiconductor device. The method includes forming a stack structure including insulating layers and sacrificial layers which are alternately and repeatedly stacked on a substrate. A first photoresist pattern is formed on the stack structure. A first part of the stack structure is etched to form a stepwise structure using the first photoresist pattern as an etch mask. The first photoresist pattern includes a copolymer including a plurality of units represented by at least one of the following chemical formulas 1 to 3, wherein “R1”, “R2”, “R3”, “p”, “q” and “r” are the same as defined in the description.

A performance of a semiconductor device is improved. A film, which is made of silicon, is formed in a resistance element formation region on a semiconductor substrate, and an impurity, which is at least one type of elements selected from a group including a group 14 element and a group 18 element, is ion-implanted into the film, and a film portion which is formed of the film of a portion into which the impurity is ion-implanted is formed. Next, an insulating film with a charge storage portion therein is formed in a memory formation region on the semiconductor substrate, and a conductive film is formed on the insulating film.

A method of manufacturing a semiconductor device according to one embodiment includes forming a first film including a first metal above a processing target member. The method includes forming a second film including two or more types of element out of a second metal, carbon, and boron above the first film. The method includes forming a third film including the first metal above the second film. The method includes forming a mask film by providing an opening part to a stacked film including the first film, the second film and the third film. The method includes processing the processing target member by performing etching using the mask film as a mask.

Embodiments of the inventive concept provide a method for manufacturing a semiconductor device. The method includes forming a stack structure by alternately and repeatedly stacking insulating layers and sacrificial layers on a substrate, sequentially forming a first lower layer and a first photoresist pattern on the stack structure, etching the first lower layer using the first photoresist pattern as an etch mask to form a first lower pattern. A first part of the stack structure is etched to form a stepwise structure using the first lower pattern as an etch mask. The first lower layer includes a novolac-based organic polymer, and the first photoresist pattern includes a polymer including silicon.

A TFT and manufacturing method thereof, an array substrate and manufacturing method thereof, an X-ray detector and a display device are disclosed. The manufacturing method includes: forming a gate-insulating-layer thin film (3'), a semiconductor-layer thin film (4') and a passivation-shielding-layer thin film (5') successively; forming a pattern (5') that includes a passivation shielding layer through one patterning process, so that a portion, sheltered by the passivation shielding layer, of the semiconductor-layer thin film forms a pattern of an active layer (4a'); and performing an ion doping process to a portion, not sheltered by the passivation shielding layer, of the semiconductor-layer thin film to form a pattern comprising a source electrode (4c') and a drain electrode (4b'). The source electrode (4c') and the drain electrode (4b') are disposed on two sides of the active layer (4a') respectively and in a same layer as the active layer (4a'). The manufacturing method can reduce the number of patterning processes and improve the performance of the thin film transistor in the array substrate.

A method of forming a semiconductor device is provided such that a trench is formed in a semiconductor body at a first surface of the semiconductor body. Dopants are introduced into a first region at a bottom side of the trench by ion implantation. A filling material is formed in the trench. Dopants are introduced into a second region at a top side of the filling material. Thermal processing of the semiconductor body is carried out and is configured to intermix dopants from the first and the second regions by a diffusion process along a vertical direction perpendicular to the first surface.

A semiconductor device is provided that includes an n-type field effect transistor including a plurality of vertically stacked silicon-containing nanowires located in one region of a semiconductor substrate, and a p-type field effect transistor including a plurality of vertically stacked silicon germanium alloy nanowires located in another region of a semiconductor substrate. Each vertically stacked silicon-containing nanowire of the n-type field effect transistor has a different shape than the shape of each vertically stacked silicon germanium alloy nanowire of the p-type field effect transistor.

To provide a semiconductor device having improved reliability. After formation of an n+ type semiconductor region for source/drain, a first insulating film is formed on a semiconductor substrate so as to cover a gate electrode and a sidewall spacer. After heat treatment, a second insulating film is formed on the first insulating film and a resist pattern is formed on the second insulating film. Then, these insulating films are etched with the resist pattern as an etching mask. The resist pattern is removed, followed by wet washing treatment. A metal silicide layer is then formed by the salicide process.

A method of fabricating a semiconductor device includes forming a gate strip including a dummy electrode and a TiN layer. The method includes removing a first portion of the dummy electrode to form a first opening over a P-active region and an isolation region. The method includes performing an oxygen-containing plasma treatment on a first portion of the TiN layer; and filling the first opening with a first metal material. The method includes removing a second portion of the dummy electrode to form a second opening over an N-active region and the isolation region. The method includes performing a nitrogen-containing plasma treatment on a second portion of the TiN layer; and filling the second opening with a second metal material. The second portion of the TiN layer connects to the first portion of the TiN layer over the isolation region.

A method for forming a semiconductor structure includes forming a strained silicon germanium layer on top of a substrate. At least one patterned hard mask layer is formed on and in contact with at least a first portion of the strained silicon germanium layer. At least a first exposed portion and a second exposed portion of the strained silicon germanium layer are oxidized. The oxidizing process forms a first oxide region and a second oxide region within the first and second exposed portions, respectively, of the strained silicon germanium.

A method for manufacturing an LDMOS device includes: providing a semiconductor substrate (200), forming a drift region (201) in the semiconductor substrate (200), forming a gate material layer on the semiconductor substrate (200), and forming a negative photoresist layer (204) on the gate material layer; patterning the negative photoresist layer (204), and etching the gate material layer by using the patterned negative photoresist layer (204) as a mask so as to form a gate (203); forming a photoresist layer having an opening on the semiconductor substrate (200) and the patterned negative photoresist layer (204), the opening corresponding to a predetermined position for forming a body region (206); and injecting the body region (206) by using the gate (203) and the negative photoresist layer (204) located above the gate (203) as a self-alignment layer, so as to form a channel region.

The on-state characteristics of a transistor are improved and thus, a semiconductor device capable of high-speed response and high-speed operation is provided. A highly reliable semiconductor device showing stable electric characteristics is made. The semiconductor device includes a transistor including a first oxide layer; an oxide semiconductor layer over the first oxide layer; a source electrode layer and a drain electrode layer in contact with the oxide semiconductor layer; a second oxide layer over the oxide semiconductor layer; a gate insulating layer over the second oxide layer; and a gate electrode layer over the gate insulating layer. An end portion of the second oxide layer and an end portion of the gate insulating layer overlap with the source electrode layer and the drain electrode layer.

A semiconductor structure is disclosed. The semiconductor structure includes a source trench in a drift region, the source trench having a source trench dielectric liner and a source trench conductive filler surrounded by the source trench dielectric liner, a source region in a body region over the drift region. The semiconductor structure also includes a patterned source trench dielectric cap forming an insulated portion and an exposed portion of the source trench conductive filler, and a source contact layer coupling the source region to the exposed portion of the source trench conductive filler, the insulated portion of the source trench conductive filler increasing resistance between the source contact layer and the source trench conductive filler under the patterned source trench dielectric cap. The source trench is a serpentine source trench having a plurality of parallel portions connected by a plurality of curved portions.

A semiconductor device includes a substrate comprising a channel region and a recess, wherein the recess is located at both side of the channel region; a gate structure formed over the channel region; a first SiP layer covering bottom corners of the gate structure and the recess; and a second SiP layer formed over the first SiP layer and in the recess, wherein the second SiP layer has a phosphorus concentration higher than that of the first SiP layer.

A method of production of a semiconductor device comprising a semiconductor layer forming step of forming a semiconductor layer including an inorganic oxide semiconductor on a board, a passivation film forming step of forming a passivation film comprising an organic material so as to cover the semiconductor layer, a baking step of baking the passivation film, and a cooling step of cooling the passivation film after baking, herein, in the cooling step, a cooling speed from a baking temperature at the time of baking in the baking step to a temperature 50° C. lower than the baking temperature is substantially controlled to 0.5 to 5° C./min in range is provided.

Provided is a method for fabricating an electronic device, the method including: preparing a carrier substrate including an element region and a wiring region; forming a sacrificial layer on the carrier substrate; forming an electronic element on the sacrificial layer of the element region; forming a first elastic layer having a corrugated surface on the first elastic layer of the wiring region; forming a metal wirings electrically connecting the electronic element thereto, on the first elastic layer of the wiring region; forming a second elastic layer covering the metal wirings, on the first elastic layer; forming a high rigidity pattern filling in a recess of the second elastic layer above the electronic element so as to overlap the electronic element, and having a corrugated surface; forming a third elastic layer on the second elastic layer and the high rigidity pattern; and separating the carrier substrate.

Hall effect devices and field effect transistors are formed incorporating a carbon-based nanostructure layer such as carbon nanotubes and/or graphene with a sacrificial metal layer formed there over to protect the carbon-based nanostructure layer during processing.

A method is provided for making smooth crystalline semiconductor thin-films and hole and electron transport films for solar cells and other electronic devices. Such semiconductor films have an average roughness of 3.4 nm thus allowing for effective deposition of additional semiconductor film layers such as perovskites for tandem solar cell structures which require extremely smooth surfaces for high quality device fabrication.

Provided are superconducting circuits and, more specifically, methods of forming such circuits. A method may involve forming a silicon-containing low loss dielectric (LLD) layer over a metal electrode such that metal carbides at the interface of the LLD layer and electrode. The LLD layer may be formed using chemical vapor deposition (CVD) at a temperature of less than about 500° C. At such a low temperature, metal silicides may not form even though silicon containing precursors may come in contact with metal of the electrode. Silicon containing precursors having silane molecules in which two silicon atoms bonded to each other (e.g., di-silane and tri-silane) may be used at these low temperatures. The LLD layer may include amorphous silicon, silicon oxide, or silicon nitride, and this layer may directly interface one or more metal electrodes. The thickness of LLD layer may be between about 1,000 Angstroms and 10,000 Angstroms.

An organic layer deposition assembly for depositing a deposition material on a substrate includes a deposition source configured to spray the deposition material, a deposition source nozzle arranged in one side of the deposition source and including deposition source nozzles arranged in a first direction, a patterning slit sheet arranged to face the deposition source nozzle and having patterning slits in a second direction that crosses the first direction, and a correction sheet arranged between the deposition source nozzle and the patterning slit sheet and configured to block at least a part of the deposition material sprayed from the deposition source.

A method of forming microelectronic systems on a flexible substrate includes depositing a plurality of layers on one side of the flexible substrate. Each of the plurality of layers is deposited from one of a plurality of sources. A vertical projection of a perimeter of each one of the plurality of sources does not intersect the flexible substrate. The flexible substrate is in motion during the depositing the plurality of layers via a roll to roll feed and retrieval system.

An array substrate of organic light-emitting diodes and a method for fabricating the same are provided to narrow an edge frame of product device of organic light-emitting diodes, to shorten the package process time, and to improve the substrate utilization and the production efficiency. The array substrate of organic light-emitting diodes includes a plurality of display panels disposed in an array of rows and columns, wherein at least two adjacent display panels are connected through a frame adhesive, and there is no cutting headroom between at least one side of the at least two adjacent display panels.

One embodiment is a wide stripe semiconductor waveguide, which is cleaved at a Talbot length thereof, the wide stripe semiconductor waveguide having facets with mirror coatings. A system provides for selective pumping the wide stripe semiconductor waveguide to create and support a Talbot mode. In embodiments according to the present method and apparatus the gain is patterned so that a single unique pattern actually has the highest gain and hence it is the distribution that oscillates.

Foreign objects that have entered inside an insertion body are suppressed from reaching a detector side. In a buckle device, when a tongue plate is attached, an ejector slides downwards inside a buckle body, opening a through hole in a partitioning wall of a lower cover at the upper side. A main body portion of a slider member of a buckle switch is inserted into the through hole, closing off a portion of the through hole that has been opened by the ejector. Hence it is suppressed that foreign objects discharged through an insertion through hole in the buckle body to outside the buckle body pass through the through hole and reach the buckle switch side further than the partitioning wall.

A tensioning device comprises an elongate member, preferably a band, and a frame having first and second sides. The band has a first end that is attachable to the first side of the frame and a second end that is releasably securable to the second side of the frame. A movable clamping member on the frame secures the second end of the band to the second side of the frame by cinching the second end of the band between an engagement surface on the band and a mating engagement surface on the second side of the frame. A restraining member is provided for restraining the clamping member to a first position spaced from the mating locking surface on the second side of the frame, when the restraining member is in a restraining orientation. The restraining member is movable out of the restraining orientation after the band is tensioned to a predetermined level using the second end. The band is tensioned to the aforementioned predetermined level and is secured to the second side of the frame, so that the band establishes a path of tension along its length that extends linearly between the two ends of the band.

An apparatus and method for carrying and storing a portion of rope is claimed. A portion of rope is braided and wound about two complementary loops. Attached to one complementary loop is a flexible fastener. The flexible fastener can be passed through the second complementary loop and attached to itself. The apparatus can then be worn as a bracelet. When the rope is needed, the person can unwind the rope. After using the rope, the rope can be rewound and then bound with the flexible fastener.

An elastic zip tie is integrally molded from foam rubber, and includes a long strip of strap, a head located at a front end of the strap, and a plurality of flexible grips axially spaced on an upper and a lower surface of the strap. At least one holding space is defined by between any two adjacent axially-spaced flexible grips. The head has a thickness defined between two lateral sides thereof and is substantially larger than a longitudinal length of the holding space, i.e., a distance between two adjacent flexible grips. When a tail end of the strap is extended through the head for the latter to rest on the strap in a selected holding space, the flexible grips located immediately before and behind the holding space are elastically pressed against the two opposite lateral sides of the head to thereby firmly hold the latter in the holding space.

Substrates such as sheet metal components may be kept spaced apart from each other using a molded polymeric spacing device. The spacing device has a main body with a thickness corresponding to the desired minimum spacing between the substrates and, extending from the main body or a base connected to said main body, an attachment member capable of being inserted into an opening in one of the substrates, but resistant to being easily withdrawn from such opening. Noise and vibration that might otherwise be generated or propagated by closely proximate substrates are reduced through the use of such molded polymeric spacing devices, which may be integrally fashioned from a rubber.

A wire gripping assembly for securing an electrical box or light fixture to a support. The wire gripping assembly includes a wire gripping device having a body with open channels and a through bore, a clip member having legs for sliding engagement within the channels, a cable having an end connector thereon, and a thumbscrew for adjusting the clip member with respect to the body. The thumbscrew includes a head having an outer circumference with serrations to enable hand tightening and an end with a slot for engagement by a screwdriver or similar tool. The wire gripping assembly eases installation of an electrical device to an overhead support by enabling a two-step connection including initial hand tightening using the serrated outer surface of the thumbscrew and subsequent secure tightening by engaging the slot of the thumbscrew with a screwdriver or similar tool.

A device clip includes a first jaw member, and a second jaw member having fixed end pivotally connected to one end of the first jaw member and a free end provided with a rod member that is movable along the major axis of the second jaw member by an external force and can return to its former position when the external force disappears. Thus, the other end of the first jaw member is detachably lockable to the rod member at the free end of the second jaw member for enabling the device clip to conveniently and steadily link two objects together, for example, to link a camera bag to a backpack.

The present invention discloses a driving device for a belt axle of a winch, which addresses the problems existing in conventional winches, for example the driving devices being out of work attributing to wearing of the unidirectional teeth on the fixed base and rotary body of the winch. The rotary cylinder of the driving device of the invention is provided with insertion holes into which a crow bar can be inserted. The fixed base is fixedly connected with the belt axle of the winch. The rotary cylinder is covered on the fixed base and fixed thereto in the axial direction. A unidirectional mechanism is located between the rotary cylinder and the belt axle to be engaged by unidirectional teeth. As the shift element and shift plates can be conveniently removed, the worn shift plates or shift element can be conveniently replaced after being used for a long period.

The present disclosure relates to an apparatus for fastening a power semiconductor using an integral springy (elastic) clip, capable of fixing a power semiconductor, such as a diode and a MOSFET, using elasticity of a U-shaped clip by integrally molding the clip onto a housing of a plastic module. The apparatus includes an elastic (springy) clip integrally molded onto a lower surface of the housing and downwardly curved into a U-like shape in a bridge module in which a bridge of the power semiconductor protrudes through a through hole of the housing to be connected to a printed circuit board, whereby the power semiconductor is fixed by a force that the housing presses the power semiconductor.

A hook formed into a body having a hook shape and having a neck and fabricated from nonferromagnetic material with the body having a first end and a second end. The neck is proximate the first end. The hook also includes a closure that is fabricated from nonmagnetic ferromagnetic material, other nonmagnetic materials, and magnetic ferromagnetic materials, and having a first closure end and a second closure end, the closure being pivotally and/or pivotally and slidably attached to the body and positioned to span a gap between the second end of the hook and the body. There is at least one magnet fixedly attached to the neck, so the at least one magnet holds the closure in a closed position that spans the gap such that the hook encloses a defined space in the closed position.

A buckle assembly structured for quick release and including a gripping assembly structured to removably retain an end connector in a locked position. Two locking segments are movably connected to one another and disposable between a closed orientation and a release orientation. The locked position includes the locking segments disposed in gripping engagement with the connector when the connector is disposed between the locking segments. A quick release assembly may be selectively positioned into a separating engagement with the locking segments to at least partially define a positioning thereof from their closed orientation into their release orientation. A secondary release assembly is connected to the gripping assembly and is independently operable to release the connector from the gripping engagement with the locking segments.

A funerary article for the identification and perpetuation of the memory of a deceased individual in a timeless manner, made of unalterable material, includes: a marked element (1) with a unique code that is assigned to the deceased individual, and on a pair of plates (3, 4) held together by an attachment member, both being marked with the unique code, the second plate including data for identification of the deceased individual in natural language to constitute a device for identification and remembrance. The marked element (1) is available when the Funeral Services take charge of the deceased, whereas the plates (3, 4) are produced following the burial or the cremation and are then to be attached together to definitively form the article for remembrance and identification of the deceased. A kit and a process for the production of this funerary article for identification and remembrance are also described.

A containment device for holding the remains of a cremated individual. The containment device may include a receptacle with a rim section and a containment section. A cap may be sealed on the receptacle once the remains of the cremated individual are within the containment section. The outside of the receptacle may include an attachment component. Therefore, the receptacle may be displayed in one's home for a time and then may be permanently mounted in a memorial site. An anchor may attach to the attachment component to prevent theft.

The sealing acrylic urn vault of the invention includes a generally square sheet of ⅝″ cast acrylic serving as the base and a generally square top portion which will have four adjacent side walls bonded to its edges and protruding downward. Each opposing side wall will be bonded length-wise to each adjoining side, creating a seamless cast acrylic box, open at the bottom, that lowers onto the acrylic base. Attached to the base are four 0.625″ tall ⅝″ thick acrylic guide rails, bonded equidistant from the outside base edge on all four sides of the base. This “railing system” is the fastening guide for the acrylic top portion which lowers onto the base with the inside of the four side walls bonded with the outside edges of the four guide rails.

A carrier is provided for facilitating the carrying and transportation of a funerary container having a bottom surface, a plurality of side surfaces and a top surface, along with a length and width and interior large enough to accommodate an un-cremated corpse. The carrier includes a base member having a length generally long enough to span the width of the funerary container and a upper surface sized and configured for receiving the bottom surface of the funerary container. An upstanding member has a lower end coupled to the base member and an upper end. The upstanding member extends in a plane generally perpendicular to the base member. A handle member is provided that is coupled to the upstanding member. The handle includes a hand receiving surface engageable by the hand of the user.

The present invention relates to a method to improve the appearance of a corpse by means of the application of specific thanatocosmetic compositions. The invention also relates to the new compositions and to their use in thanato-aesthetics.

Methods and systems for preserving tissues in situ using critical point drying are disclosed. Such methods and systems are particularly applicable to the preservation of a deceased body, such as a deceased person or animal, with or without removal of internal tissues or organs. A fixative can be perfused through the vascular system of the body while blood is removed from the body. The exterior of the body can also be immersed in a bath of fixative. The fixative in the vascular system and the bath can be replaced by subsequent washes of buffer, de-ionized water, and/or alcohol. The alcohol-infused and fixated body can be disposed in a pressure chamber and subjected to a critical point drying process using carbon dioxide. After the critical point drying process, the body is in a preserved state.

Embodiments are directed to an adjustable universal valve handle.

Disclosed herein are a hygienic handle assembly and related methods for automatically advancing a clean portion of a protective sleeve over a handle after use of the handle by a person. In one embodiment, an exemplary hygienic handle assembly comprises a pair of first magnetic couplers, each having a passage therethrough, and a handle extending between the pair of first magnetic couplers and having a second magnetic coupler at each of its opposing ends. Each of the second magnetic couplers may be configured to be located within at least a portion of a corresponding first magnetic coupler, wherein magnetic fields of the first magnetic coupler repel magnetic fields of the second magnetic couplers received therein such that each second magnetic coupler is magnetically suspended within the corresponding first magnetic coupler.

A removable handle assembly for a cooking vessel a gripping body, a front end of which forms a flared jaw. The flared jaw has projections adapted to clamp the wall of a vessel. The projections are substantially linear in shape in directions that intersect in front of the gripping body. A flared mobile jaw is mounted on the gripping body to rotate about a first axis between a release position and a clamping position. The flared jaw has two projections (504) of substantially linear shape in directions that intersect in front of the gripping body. An actuating lever mounted on the gripping body rotates about a second axis between a deployed position and a retracted position. A mechanism actuated by the actuating lever locks the mobile jaw in the clamping position.

Provided is a vehicle floor mat reducing a load on a mat main body. The vehicle floor mat includes at least one fastening device for fastening the mat main body to a vehicle. The fastening device includes a first fastening member fixed to the vehicle and a second fastening member fixed to the mat main body. The first fastening member includes a vertical rotating knob, and the second fastening member includes: an insertion receiving section for the rotating knob to be inserted thereinto and engaged therewith; and upper and lower half bodies sandwiching the mat main body and being connected to each other through a half body connecting portion for the rotating knob to be inserted thereinto and at least one outer connecting portion disposed outside the half body connecting portion provided around the insertion receiving section, thus improving a connecting strength between the upper and lower half bodies.

A hinge including a first hinge half rotatably connected to a second hinge half is described. A support mechanism selectively supports the first hinge half at one or more rotated positions relative to the second hinge half. The support mechanism includes a support which is selectively biased toward a support position in which the support is capable of supporting the first hinge half at a rotated position relative to the second hinge half. The support can further be selectively biased into a disengaged position in which the support is not capable of supporting the first hinge half relative to the second hinge half. With the support in a disengaged position, the first hinge half is freely pivotable relative to the second hinge half. An automatic reset mechanism may be utilized in connection with the hinge to reposition the support from the disengaged position to the support position as the hinge approaches a predefined position.